{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"采用低温燃烧法制备了Y2Zr2O7:Eu3+纳米微粒,用XRD和HRTEM对纳米微粒的结构、形貌进行了分析和表征.作为对比,采用高温固相法制备了Y2Zr2O7:Eu3+体相材料,对其变温发光特性进行了测试和对比研究.结果表明,Y2Zr2O7:Eu3+纳米晶的606和628nm发射(5D0→7F2)最强,与5D0→7F1磁偶跃迁相对发光强度较体相材料增强60%,且随着温度的降低,Eu3+离子5D0→7FJ(J=1,2,3,4)跃迁发光强度均有变化.另外,采用盐酸\"浸蚀\"技术对Y2Zr2O7:Eu3+纳米微粒进行了表面处理,室温发射光谱测试表明:5D0→7F2,3,4电偶跃迁与5D0→7F1磁偶跃迁的相对强度较表面处理前减小约15%.对观测到的结果通过纳米微粒的表面效应和激活离子所处局域环境的变化进行了定性解释和讨论.","authors":[{"authorName":"王殿元","id":"0f5a072f-f99a-4abd-81a7-fdf8064b91a4","originalAuthorName":"王殿元"},{"authorName":"王庆凯","id":"62531f96-9e4a-49de-99ef-219589fd6610","originalAuthorName":"王庆凯"},{"authorName":"常章用","id":"1656bcea-2b8e-4e9d-b739-221c2604a2eb","originalAuthorName":"常章用"},{"authorName":"郭艳艳","id":"bdd6619b-e8b5-4e2f-88c8-bc3888bedc6e","originalAuthorName":"郭艳艳"},{"authorName":"吴杏华","id":"27f70006-0741-4268-8525-a767026286e4","originalAuthorName":"吴杏华"}],"doi":"10.3724/SP.J.1077.2009.00239","fpage":"239","id":"520e40a5-a620-4062-b8dc-5139f87e0542","issue":"2","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"ec713639-7f00-405d-95c2-8db2d168107d","keyword":"Y2Zr2O7","originalKeyword":"Y2Zr2O7"},{"id":"6e92213f-9862-4ed7-a517-a4e7ce260ecd","keyword":"Eu3+纳米晶","originalKeyword":"Eu3+纳米晶"},{"id":"5783bd91-7112-4b93-8e05-24bc5295f9f8","keyword":"燃烧合成","originalKeyword":"燃烧合成"},{"id":"ff5f67bb-6dd5-4e7f-b089-6c2d858e2a9e","keyword":"变温发光特性","originalKeyword":"变温发光特性"},{"id":"79c95f28-710b-4726-83c9-27ba16d08d76","keyword":"表面处理","originalKeyword":"表面处理"}],"language":"zh","publisherId":"wjclxb200902007","title":"Y2Zr2O7:Eu3+纳米微粒的合成与变温发光特性研究","volume":"24","year":"2009"},{"abstractinfo":"采用低温燃烧法制备了Y₂Zr₂O₇∶Eu³⁺纳米微粒，用XRD和HRTEM对纳米微粒的结构、形貌进行了分析和表征.作为对比，采用高温固相法制备了Y₂Zr₂O₇∶Eu³⁺体相材料，对其变温发光特性进行了测试和对比研究.结果表明，Y₂Zr₂O₇∶Eu³⁺纳米晶的606和628nm发射（⁵D₀→⁷F₂）最强，与⁵D₀→⁷F₁磁偶跃迁相对发光强度较体相材料增强60%，且随着温度的降低，Eu³⁺离子5D₀→7F_J(J=1,2,3,4)跃迁发光强度均有变化.另外，采用盐酸“浸蚀”技术对Y₂Zr₂O₇∶Eu³⁺纳米微粒进行了表面处理，室温发射光谱测试表明：⁵D₀→⁷F_2,3,4电偶跃迁与⁵D₀→⁷F₁磁偶跃迁的相对强度较表面处理前减小约15%.对观测到的结果通过纳米微粒的表面效应和激活离子所处局域环境的变化进行了定性解释和讨论.","authors":[{"authorName":"王殿元","id":"58577c3a-520a-462e-990c-faa22e8d591e","originalAuthorName":"王殿元"},{"authorName":"王庆凯","id":"9d6e14ef-512a-403f-a22d-beaadef2cfbf","originalAuthorName":"王庆凯"},{"authorName":"常章用","id":"ae5eef05-c7de-4b9a-aa10-533a6468f32e","originalAuthorName":"常章用"},{"authorName":"郭艳艳","id":"dfff3914-4eea-40a7-9f8a-5cf594f85c65","originalAuthorName":"郭艳艳"},{"authorName":"吴杏华","id":"4a4843fd-2dc1-4b68-a0ee-4d7cd473371a","originalAuthorName":"吴杏华"}],"categoryName":"|","doi":"10.3724/SP.J.1077.2009.00239","fpage":"239","id":"f84ba8c8-f663-4ab5-9bce-39b94209a395","issue":"2","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"c4ea6519-efb0-4343-b1ea-081d903fee9f","keyword":"Y₂Zr₂O₇∶Eu³⁺纳米晶","originalKeyword":"Y₂Zr₂O₇∶Eu³⁺纳米晶"},{"id":"fa81a69b-0d45-4dc7-a565-57de258040b0","keyword":" combustion synthesis","originalKeyword":" combustion synthesis"},{"id":"300f1d51-4f99-425c-ba0e-a302cc4b3a6b","keyword":" temperature dependent photoluminescence","originalKeyword":" temperature dependent photoluminescence"},{"id":"10afde56-a1f5-4713-901d-24af993ebadc","keyword":" surface treatment","originalKeyword":" surface treatment"}],"language":"zh","publisherId":"1000-324X_2009_2_36","title":"Y₂Zr₂O₇∶Eu³⁺纳米微粒的合成与变温发光特性研究","volume":"24","year":"2009"},{"abstractinfo":"采用未经准直能童为5.48MeV的241 Am α粒子,研究了温度在230-300K范围内,不同电场作用下CdZnTe晶体的脉冲响应信号,分析了载流子传输特性随温度变化的规律.对比了室温(298K)以及280K下探测器对241 Am@59.5keVγ射线的响应光谱.同时分析了1500V/cm电场作用下探测器漏电流随温.度的变化规律.研究表明,对于性能优异的CdZnTe晶体,载流子迁移率寿命积随温度变化较小.而对于存在de-trapping(去俘获)缺陷的CdZnTe样品,光生载流子在晶体中的传输会显著减缓,且随温度的降低,其对脉冲波形的影响加剧.而温度降低可以减少提高探测器的能量分辫率.","authors":[{"authorName":"徐亚东","id":"5ec96ef4-5657-44b6-9034-8abc36330372","originalAuthorName":"徐亚东"},{"authorName":"何亦辉","id":"dfb4b3a6-283b-47ad-95e9-03f94c0e53ed","originalAuthorName":"何亦辉"},{"authorName":"王涛","id":"e09eaf71-4329-486c-bba2-9da0a103c97a","originalAuthorName":"王涛"},{"authorName":"查钢强","id":"57dcd31b-2b23-400d-9304-99839cf8f0b0","originalAuthorName":"查钢强"},{"authorName":"傅莉","id":"766a5510-bf2c-479e-9a11-460ef80148ff","originalAuthorName":"傅莉"},{"authorName":"介万奇","id":"6a4f9d3d-c313-44ed-89a7-99868e1e7332","originalAuthorName":"介万奇"}],"doi":"","fpage":"441","id":"b072cba7-3da0-4941-8ccb-910cd8fd0221","issue":"3","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"6e2d4edc-1371-482e-90a4-795ae294991b","keyword":"CdZnTe","originalKeyword":"CdZnTe"},{"id":"9df8b112-e83e-45be-9e6a-e3364057eefc","keyword":"α粒子","originalKeyword":"α粒子"},{"id":"d19cb5da-d598-4736-b842-6a5f72e4e817","keyword":"脉冲响应光谱","originalKeyword":"脉冲响应光谱"},{"id":"3c1704d7-4a23-4799-9739-6cfc7223d5be","keyword":"载流子传输","originalKeyword":"载流子传输"},{"id":"dd105b4e-19f1-402a-8c8a-1f30808638b8","keyword":"漏电流","originalKeyword":"漏电流"}],"language":"zh","publisherId":"gncl201103016","title":"探测器级CdZnTe晶体变温特性研究","volume":"42","year":"2011"},{"abstractinfo":"本文介绍了一种基于热化学变压解吸-变温吸附原理的低品位热能变温储能新技术及系统,并针对以MnCl2-NaBr-NH3为工质对的试验系统进行了实验研究.当外界高温热源的温度为121℃,模拟的被加热的热用户为150℃,外界环境温度为15℃,蒸发温度为55℃时,对应的储能效率为0.302.理论分析和实验结果表明:基于变压解吸 变温吸附的热化学复合吸附储能技术能够有效提升热能品位并为外界提供所需要的热量,将其用于低品位热能的存储及品位提升是可行的,进而为低品位热能的综合利用提供了一种新的思路.","authors":[{"authorName":"闫霆","id":"3c075a18-2913-4898-aa2e-1bb88429d3ba","originalAuthorName":"闫霆"},{"authorName":"王如竹","id":"ed087b04-5252-4184-b891-736f5380d8f1","originalAuthorName":"王如竹"},{"authorName":"李卉","id":"d7160721-8f20-48fc-9f14-fa78f7b0634c","originalAuthorName":"李卉"},{"authorName":"马良","id":"19796740-458f-4cfb-933c-8055633ac356","originalAuthorName":"马良"},{"authorName":"李廷贤","id":"44983284-0afe-4ba2-9b1b-f622e7f97b7c","originalAuthorName":"李廷贤"}],"doi":"","fpage":"1470","id":"b66d88c5-7db1-4bde-9526-592b9c3707d2","issue":"8","journal":{"abbrevTitle":"GCRWLXB","coverImgSrc":"journal/img/cover/GCRWLXB.jpg","id":"32","issnPpub":"0253-231X","publisherId":"GCRWLXB","title":"工程热物理学报 "},"keywords":[{"id":"416f21d8-ff0e-4486-b220-0087afbfb211","keyword":"热化学吸附","originalKeyword":"热化学吸附"},{"id":"7ae5dd22-3da6-476b-bc16-d16176fee29c","keyword":"再吸附","originalKeyword":"再吸附"},{"id":"04373859-b5c0-492f-9dbd-f572aac19ccd","keyword":"复合吸附储能","originalKeyword":"复合吸附储能"},{"id":"7a52b28c-e4b8-4344-9888-a591080bddf8","keyword":"能量品位提升","originalKeyword":"能量品位提升"}],"language":"zh","publisherId":"gcrwlxb201408002","title":"耦合变压解吸-变温吸附技术的热化学变温器储能特性研究","volume":"35","year":"2014"},{"abstractinfo":"为了能利用半导体材料ZnO对光谱曲线随温度变化而移动的原理设计一种光纤温度传感器,因此有必要对生长在光纤端面上的ZnO材料的温变特性的进行研究.基于ZnO材料的测温原理,利用电子束蒸发技术在蓝宝石光纤端面上生长ZnO薄膜,并设计了一种具有低插入损耗的光纤检测系统用于光学性能的分析.光谱测试结果显示,蒸镀在蓝宝石光纤端面上的ZnO薄膜具有陡峭的光学吸收边,随着温度的升高(室温～450℃),ZnO薄膜的禁带宽度减小,吸收边向长波长方向移动,符合半导体材料的温变特性.同时随着温度的升高,平均的透射率有一定的减小.ZnO薄膜温变特性的研究,将为进一步研制以ZnO镀膜为敏感材料的新型光纤温度传感器打下良好的基础.","authors":[{"authorName":"周红","id":"dc08f7ea-8203-4055-8cb6-aed033cd5a9d","originalAuthorName":"周红"}],"doi":"10.3969/j.issn.1007-4252.2010.03.004","fpage":"217","id":"b6d17d86-99af-47b0-a7e3-d0baffc452ff","issue":"3","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报 "},"keywords":[{"id":"88e7b122-d5eb-4a10-9ae5-98be1969e150","keyword":"温度传感器","originalKeyword":"温度传感器"},{"id":"44227885-3140-4abe-a879-a9016f3b9ca8","keyword":"ZnO薄膜","originalKeyword":"ZnO薄膜"},{"id":"e970bf19-2a9e-4a4f-b91f-02d4feeb715e","keyword":"光学吸收边","originalKeyword":"光学吸收边"}],"language":"zh","publisherId":"gnclyqjxb201003004","title":"蓝宝石光纤端面上ZnO薄膜的温变特性","volume":"16","year":"2010"},{"abstractinfo":"本文研究了粘弹性阻尼材料的耗能机理和动态阻尼特性,采用分数导数模型,并与温频等效原理相结合,得到了粘弹性阻尼材料的复模量、损耗因子与温度关系的参数化数学模型;并结合粘弹性阻尼材料的DMA测试实验数据对模型参量进行了拟合.实验结果和误差分析表明拟合的数学模型能够准确反映粘弹性材料在定频率变温度条件下的动力学特性的变化情况.","authors":[{"authorName":"李世其","id":"b3388e15-72c0-4f03-8506-4856f2def72c","originalAuthorName":"李世其"},{"authorName":"胡线会","id":"b719404b-d592-4cb6-a238-1c527a6abec7","originalAuthorName":"胡线会"},{"authorName":"朱文革","id":"886ae988-9359-4883-8f63-4c12168ded51","originalAuthorName":"朱文革"},{"authorName":"张针粒","id":"b0077702-1d06-42b2-adc6-a6c725e514b6","originalAuthorName":"张针粒"}],"doi":"","fpage":"839","id":"f4ba6f29-ef7b-416f-a3cb-3e60ddbc66dd","issue":"6","journal":{"abbrevTitle":"CLKXYGCXB","coverImgSrc":"journal/img/cover/CLKXYGCXB.jpg","id":"13","issnPpub":"1673-2812","publisherId":"CLKXYGCXB","title":"材料科学与工程学报"},"keywords":[{"id":"cce11906-a6ef-4d1e-afe5-1a83ac9c4293","keyword":"粘弹性阻尼材料","originalKeyword":"粘弹性阻尼材料"},{"id":"dbcc5507-6c05-44ab-a583-1b1ff559d475","keyword":"温频等效","originalKeyword":"温频等效"},{"id":"442d18e7-0659-4005-8674-abb56a5283d0","keyword":"分数导数模型","originalKeyword":"分数导数模型"},{"id":"62a8ef67-c352-4f8f-8710-acaf5cdf5590","keyword":"误差分析","originalKeyword":"误差分析"}],"language":"zh","publisherId":"clkxygc201006009","title":"定频变温下粘弹材料动力学特性数据拟合分析","volume":"28","year":"2010"},{"abstractinfo":"研究了工业纯钛TA2室温下蠕变第1阶段的特性.结果表明,TA2材料室温下确实存在明显的蠕变现象,并且存在一个临界应力值,低于该临界值的TA2在室温下不会发生蠕变.TA2室温下蠕变第1阶段的规律为β蠕变.针对TA2材料室温下第1阶段的蠕变特性,本研究提出了一种新的β值与应力间的关系表达式:β=β0(σ-σc)m,其中σc为蠕变临界应力.并且得到室温下TA2的蠕变临界应力值为267.25 MPa.","authors":[{"authorName":"马秋林","id":"0aad343a-cafc-4751-bfce-c5c9d26ffaa6","originalAuthorName":"马秋林"},{"authorName":"张莉","id":"491c5076-1493-4bda-a4b9-8ab75f99a8f2","originalAuthorName":"张莉"},{"authorName":"徐宏","id":"fc5fee64-5b48-4313-9edc-5dbfa9d1c2e7","originalAuthorName":"徐宏"},{"authorName":"王志文","id":"bc155ef9-9450-460c-9f4d-68d76ed8c74e","originalAuthorName":"王志文"}],"doi":"","fpage":"11","id":"f566198b-5f02-4ff8-add6-80178bdaf644","issue":"1","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"33528312-7ed3-4e32-90ff-9f5f695ed4fd","keyword":"工业纯钛TA2","originalKeyword":"工业纯钛TA2"},{"id":"53b28c4a-9321-4c42-9b6b-acb88f8a76a2","keyword":"蠕变第1阶段","originalKeyword":"蠕变第1阶段"},{"id":"f355cab8-e99a-4f22-9475-2f445a75609f","keyword":"β蠕变","originalKeyword":"β蠕变"},{"id":"e4d7b655-97c1-49dd-b2b4-3b5357261a0b","keyword":"蠕变临界应力","originalKeyword":"蠕变临界应力"}],"language":"zh","publisherId":"xyjsclygc200701003","title":"工业纯钛TA2室温蠕变第1阶段特性研究","volume":"36","year":"2007"},{"abstractinfo":"在温和条件下合成了一种有机胺硼酸盐[C4H12N]·[B5O6(OH)4],通过单晶衍射的手段解析其晶体结构.在不同温度下对该物质进行加热,观察其红外光谱的变化判断其内部的结构是否能够保持稳定,并通过热重分析进行补充说明.紫外发光光谱的测试表明,使用368 nm的激发光照射样品,可以得到430 nm,470 nm的发射光谱.在不同温度下加热后,该物质的发光特性发生明显的变化.这种变温的改性实验证实有机胺硼酸盐是一种可能的白光LED上的蓝光材料.","authors":[{"authorName":"潘春阳","id":"56f30a8e-2df0-4d23-a9ea-b988c17e5ac5","originalAuthorName":"潘春阳"},{"authorName":"李大光","id":"2ba420fa-482d-49b3-8add-ee9f12f91816","originalAuthorName":"李大光"},{"authorName":"胡升","id":"359ac5a7-6d60-40f6-be75-7ee642ea0a51","originalAuthorName":"胡升"},{"authorName":"赵丰华","id":"8f2253f1-6f8c-4c79-896e-bf46db43393b","originalAuthorName":"赵丰华"},{"authorName":"欧阳萍","id":"52a32e5a-815f-4f4b-bc51-36463913480f","originalAuthorName":"欧阳萍"}],"doi":"","fpage":"944","id":"aec35770-737a-4d7f-9da7-feb47f0f3d8b","issue":"4","journal":{"abbrevTitle":"GSYTB","coverImgSrc":"journal/img/cover/GSYTB.jpg","id":"36","issnPpub":"1001-1625","publisherId":"GSYTB","title":"硅酸盐通报 "},"keywords":[{"id":"e7c96cd6-55b4-4f7b-8aae-eb4e70bf66b6","keyword":"有机模板","originalKeyword":"有机模板"},{"id":"d8b3435e-ce31-439a-bbe5-12813de55991","keyword":"硼酸盐","originalKeyword":"硼酸盐"},{"id":"405e0b64-21a0-4f95-b809-5a4e7e4bd1e4","keyword":"红外","originalKeyword":"红外"},{"id":"e8ff671d-4c1f-4dca-bbc6-a0cb8e2d1b77","keyword":"发光","originalKeyword":"发光"},{"id":"6857807b-b51c-4b93-8aff-7cf6b8cccc01","keyword":"LED","originalKeyword":"LED"}],"language":"zh","publisherId":"gsytb201004039","title":"有机模板硼酸盐[C4H12N]·[B5O6(OH)4]变温红外及发光性质研究","volume":"29","year":"2010"},{"abstractinfo":"采用CVD法在a-面蓝宝石衬底上制备了ZnO籽晶层,然后在籽晶层上用碳热还原法制备了高质量的ZnO纳米线阵列.发现生长后的ZnO纳米线阵列具有良好的近带边发光性能,束缚激子发光峰半峰宽＜500 μeV.通过变温PL测试,确定3.37737eV的发光峰为自由激子发光,分别通过Vina模型和Vashni模型对其进行拟合,发现在60K以下Vashni 模型的拟合相当好,而在60～150K,Vina模型的拟合效果更优.3.29eV处的峰为DAP峰,计算可得样品中的施主浓度为1.8×1018cm-3.","authors":[{"authorName":"谢涌","id":"b6bb28ff-881e-4e11-86ff-6ca100bd822b","originalAuthorName":"谢涌"},{"authorName":"介万奇","id":"dc19c8b6-efc8-4b2c-80c6-ee09daedb70d","originalAuthorName":"介万奇"},{"authorName":"王涛","id":"7e25acc3-0274-44db-8bd4-6af93f91c332","originalAuthorName":"王涛"},{"authorName":"崔岩","id":"da8c6c14-b5a4-4332-968e-d3095fac33b8","originalAuthorName":"崔岩"},{"authorName":"高俊宁","id":"6c3353ca-0913-4947-bb73-155351fc9668","originalAuthorName":"高俊宁"},{"authorName":"于晖","id":"7a113d99-ee7b-4ad3-96c6-2a9a51b01ec5","originalAuthorName":"于晖"},{"authorName":"王亚彬","id":"5b7b6e07-e754-4d5b-8f70-067903ae4288","originalAuthorName":"王亚彬"}],"doi":"","fpage":"1077","id":"4453d4dd-ac88-49c5-b726-820e982f85c4","issue":"8","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"b61b6827-cf7f-4a44-8e41-299705efd5e7","keyword":"ZnO","originalKeyword":"ZnO"},{"id":"50693c29-2a6b-475b-8d0b-c83a7272cac7","keyword":"纳米线","originalKeyword":"纳米线"},{"id":"9227f276-4cf6-4d5c-965a-2c9cd164f5bf","keyword":"光致发光","originalKeyword":"光致发光"},{"id":"3e5d78b8-3c0c-4411-9cda-debad19d378a","keyword":"自由激子","originalKeyword":"自由激子"},{"id":"5998f2c4-18d7-483c-941e-b4d323327bba","keyword":"束缚激子","originalKeyword":"束缚激子"},{"id":"24163d06-8075-4a3a-aac8-c29d7fe81c33","keyword":"X射线衍射","originalKeyword":"X射线衍射"}],"language":"zh","publisherId":"gncl201308004","title":"非催化剂法制备ZnO纳米线阵列的近带边高分辨变温光致发光性能研究","volume":"44","year":"2013"},{"abstractinfo":"对掺杂了25份(phr)导电炭黑(CB)的样品进行了正电子湮灭寿命谱的变温测量,在玻璃化转变温度以上,随着温度的增加,自由体积的大小线性增加,在玻璃化转变温度以下,自由体积的大小基本不变.o-Ps的强度在-40℃下基本不变,从-40℃以上开始增加,但在50℃以上上升有加快的趋势.与PTC材料的PTC现象和导电性能有一定的关联.\n","authors":[{"authorName":"贾少晋","id":"c0581c6f-f3a5-421c-a159-ae72454906d9","originalAuthorName":"贾少晋"},{"authorName":"张志成","id":"495b351c-84b1-40d0-a144-7258796d49ee","originalAuthorName":"张志成"},{"authorName":"范扬眉","id":"4a92d071-6a5e-4382-835c-e29f5e68660c","originalAuthorName":"范扬眉"},{"authorName":"张宪峰","id":"239166b2-f852-4681-882d-d750d6ca7e8a","originalAuthorName":"张宪峰"},{"authorName":"韩容典","id":"d8308eb1-7774-4775-be08-4d705dfdb672","originalAuthorName":"韩容典"},{"authorName":"都志文","id":"f2d10a11-5db9-49d7-8d68-16415b0c2c48","originalAuthorName":"都志文"},{"authorName":"翁惠民","id":"7403d7e3-f80f-4985-b9e8-3759b2f5b481","originalAuthorName":"翁惠民"}],"doi":"","fpage":"335","id":"d4baace4-a725-4387-a25b-cdbf3eab0f7c","issue":"3","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"77f8281c-59c5-4409-b6db-3ad81f97c5ae","keyword":"正电子湮灭","originalKeyword":"正电子湮灭"},{"id":"178a88cd-5ceb-45d4-b4f1-574b08fc39b0","keyword":"炭黑","originalKeyword":"炭黑"},{"id":"ba2d69e1-8d77-425e-b362-166e8143fd28","keyword":"PTC","originalKeyword":"PTC"},{"id":"ae140cc2-57b5-4db6-8f0f-da45e24ddf55","keyword":"自由体积","originalKeyword":"自由体积"}],"language":"zh","publisherId":"gncl200203040","title":"变温条件下HDPE/CB的正电子湮灭特性","volume":"33","year":"2002"}],"totalpage":2903,"totalrecord":29029}