{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"分析了<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H-TFT</span>阈值电压漂移的机理,即分析了栅偏应力下电荷注入到SiNx:<span style=\"color:red\">H</span>栅绝缘层和<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H</span>中亚稳态的产生对<span style=\"color:red\">TFT</span>阈值电压漂移的影响.根据非晶硅中亚稳态产生的特点,并针对驱动OLED的两管<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H-TFT</span>像素电路,提出了一种通过对数据信号时序的重新设计来补偿阈值电压漂移的方法,即在数据信号间加插一个与数据信号极性相反的补偿信号.通过这种正负交替的信号,使驱动管<span style=\"color:red\">TFT</span>中由亚稳态造成的阈值电压漂移始终保持在一个动态平衡的过程,来实现驱动OLED电流稳定的目的.","authors":[{"authorName":"刘金娥","id":"cde34bf5-4014-4843-9d4b-20c8e473f6cb","originalAuthorName":"刘金娥"},{"authorName":"廖燕平","id":"7d42e80c-bc46-44e7-8056-bdcc6285c6f4","originalAuthorName":"廖燕平"},{"authorName":"荆海","id":"e1e148a3-2583-48fe-aaf6-52d6c40af21f","originalAuthorName":"荆海"},{"authorName":"张志伟","id":"21100728-2b72-4be3-9e50-faf8178ecc6d","originalAuthorName":"张志伟"},{"authorName":"付国柱","id":"4fd31c7d-f789-44c2-833c-32a170bbde91","originalAuthorName":"付国柱"},{"authorName":"邵喜斌","id":"65586b77-5270-44c3-88fa-507d04170dae","originalAuthorName":"邵喜斌"}],"doi":"10.3969/j.issn.1007-2780.2006.05.018","fpage":"491","id":"aa7b7f1e-103b-4844-86b8-1f4c4b1a55c4","issue":"5","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"8413d8a8-d8c1-4e57-8367-cf15d3dea72b","keyword":"OLED","originalKeyword":"OLED"},{"id":"775a7342-1fcd-49da-b783-6c434df290e4","keyword":"<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H-TFT</span>","originalKeyword":"a-Si:H-TFT"},{"id":"c36bef40-622a-4bf2-8a4a-fc7240251aab","keyword":"阈值电压漂移","originalKeyword":"阈值电压漂移"},{"id":"7b771b0a-fc32-4de9-bcb2-8443d6f7bc53","keyword":"电荷注入","originalKeyword":"电荷注入"},{"id":"075f2388-b33e-4a83-81a2-539c161cd526","keyword":"亚稳态","originalKeyword":"亚稳态"},{"id":"bc48a07b-2bf4-4d16-9d48-423ac9d1ca80","keyword":"补偿方法","originalKeyword":"补偿方法"}],"language":"zh","publisherId":"yjyxs200605018","title":"<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H-TFT</span>阈值电压漂移机理及其在驱动OLED显示中的补偿设计","volume":"21","year":"2006"},{"abstractinfo":"介绍了<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H</span> <span style=\"color:red\">TFT</span>开关器件的有源层、栅绝缘层、欧姆接触层以及界面特性的研究工作.研制了<span style=\"color:red\">a-Si</span>∶<span style=\"color:red\">H</span> <span style=\"color:red\">TFT</span>单管器件,其开关电流比达到6个数量级,为最终研制<span style=\"color:red\">a-Si</span>∶<span style=\"color:red\">H</span> <span style=\"color:red\">TFT</span> AMLCD视频图像显示器奠定了坚实的基础.","authors":[{"authorName":"袁剑峰","id":"06508fe8-4a1e-492e-a2d1-56978c477811","originalAuthorName":"袁剑峰"},{"authorName":"杨柏梁","id":"1d332d00-939a-4315-a2d6-98c1a950a474","originalAuthorName":"杨柏梁"},{"authorName":"朱永福","id":"0f6e3a0e-c56a-483a-be14-3a3801a37400","originalAuthorName":"朱永福"},{"authorName":"李牧菊","id":"2042d268-406a-4967-aed6-f90cf8dcea06","originalAuthorName":"李牧菊"},{"authorName":"刘传珍","id":"8e1d449f-ed83-421c-b4e4-9f1ba4a11b5c","originalAuthorName":"刘传珍"},{"authorName":"吴渊","id":"3931f5ee-8576-43f6-aa15-6dc98bb55afc","originalAuthorName":"吴渊"},{"authorName":"廖燕平","id":"11643c1b-37ee-46c4-af79-555e191b14e2","originalAuthorName":"廖燕平"},{"authorName":"王刚","id":"01de9b5a-ffe1-4c7d-8fa5-00528f21edca","originalAuthorName":"王刚"},{"authorName":"邵喜斌","id":"03e81b08-de0b-4005-a64e-1b3088702774","originalAuthorName":"邵喜斌"},{"authorName":"刘宏武","id":"b41f497e-d2d0-46e9-b26c-ebeed13fc5b3","originalAuthorName":"刘宏武"},{"authorName":"黄锡珉","id":"7a77450e-3ff1-4a2d-b638-2fe97a296428","originalAuthorName":"黄锡珉"}],"doi":"10.3969/j.issn.1007-2780.1999.03.005","fpage":"181","id":"98e8a1e3-b819-4db9-bba2-fe57f8f5b5f4","issue":"3","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"399e9865-090f-482e-8707-8f2c53a966fb","keyword":"<span style=\"color:red\">a-Si</span>","originalKeyword":"a-Si"},{"id":"ceb24346-bf07-4412-aa69-cc3c446c8abb","keyword":"HTFT开关器件","originalKeyword":"HTFT开关器件"},{"id":"0d048e3d-d21d-467e-a8e4-20dd72d6383d","keyword":"有源层","originalKeyword":"有源层"},{"id":"5e58f6a5-c81f-4c5b-8381-71bdd76752a8","keyword":"栅绝缘层","originalKeyword":"栅绝缘层"},{"id":"81f4d56e-5877-4351-822d-4dbec9df0fa1","keyword":"界面特性","originalKeyword":"界面特性"}],"language":"zh","publisherId":"yjyxs199903005","title":"高性能<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H</span> <span style=\"color:red\">TFT</span>开关器件的研制","volume":"14","year":"1999"},{"abstractinfo":"采用PECVD工艺,在300℃下在50μm厚的Kapton E高分子塑料片上制备了底栅结构<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H</span> <span style=\"color:red\">TFT</span>阵列(20×20).用傅里叶变换红外光谱仪表征了<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H</span>薄膜的结构,用二探针法和四探针法分别表征了<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H</span>薄膜和n+a-<span style=\"color:red\">Si</span>:<span style=\"color:red\">H</span>薄膜的电导率.<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H</span>薄膜中的<span style=\"color:red\">H</span>(原子数分数)约为15.6%,<span style=\"color:red\">H</span>主要以SiH和SiH2基团的形式存在,其电导率为8.2×10-7～8.8×10-6 S/cm;n+a-<span style=\"color:red\">Si</span>:<span style=\"color:red\">H</span>薄膜的电导率为3.8×10-3 S/cm.所制备的TF工具有以下性能:Ioff≈1×10-14 A,Ionn≈1×10-9 A,Ion/Ioff≈105,Vth≈5 V,μ≈0.113cm2/(V·s),S≈2.5 V/dec,满足<span style=\"color:red\">TFT</span>-LCD等平板显示器件的开关寻址电路要求.","authors":[{"authorName":"姚建可","id":"4eb100ae-890f-48a8-b535-6b79de336970","originalAuthorName":"姚建可"},{"authorName":"许宁生","id":"4dbc4b1c-eecc-46ce-8d13-afc44bd97d12","originalAuthorName":"许宁生"},{"authorName":"邓少芝","id":"f6ca8a18-7129-409b-adb5-3c5c4d4ee808","originalAuthorName":"邓少芝"},{"authorName":"陈军","id":"fa0beb21-9a5c-4c22-b01c-326fb3f415f0","originalAuthorName":"陈军"},{"authorName":"佘峻聪","id":"1bfa5507-14e1-47fb-8591-2dedeb468feb","originalAuthorName":"佘峻聪"},{"authorName":"王彬","id":"34e918b7-62f7-41ec-a725-65bbbc883167","originalAuthorName":"王彬"}],"doi":"10.3969/j.issn.1007-2780.2010.04.018","fpage":"542","id":"6f720419-f781-4f16-96cf-4cec609de60a","issue":"4","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"9c33d3e8-faa4-42e1-ab83-c476fa95afd5","keyword":"塑料基底","originalKeyword":"塑料基底"},{"id":"89cc51e4-5eac-4805-8f15-b871e20f9158","keyword":"<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H</span> <span style=\"color:red\">TFT</span>","originalKeyword":"a-Si:H TFT"},{"id":"682fe832-c115-47e1-be26-d19aa3567484","keyword":"柔性显示","originalKeyword":"柔性显示"}],"language":"zh","publisherId":"yjyxs201004018","title":"塑料基底<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H</span> <span style=\"color:red\">TFT</span>制备技术","volume":"25","year":"2010"},{"abstractinfo":"本实验于原有的单底栅<span style=\"color:red\">a-Si</span> <span style=\"color:red\">TFT</span>产品结构下,通过增加不同的顶栅极设计方式(不同<span style=\"color:red\">a-Si</span>覆盖比例、不同沟道几何形貌、不同沟道W/L比例)来研究双栅极设计对<span style=\"color:red\">a-Si</span> <span style=\"color:red\">TFT</span>特性的影响.实验结果显示双栅极<span style=\"color:red\">a-Si</span> <span style=\"color:red\">TFT</span>比现行单底栅<span style=\"color:red\">a-Si</span> <span style=\"color:red\">TFT</span>可以提升Ion7％、降低SS 3％、同时对Ioff以及<span style=\"color:red\">TFT</span>稳定性影响不明显,显示双栅极<span style=\"color:red\">a-Si</span> <span style=\"color:red\">TFT</span>设计结构具有在不提高成本以及不变更工艺流程下,达到整体提升<span style=\"color:red\">TFT</span>特性的效果.顶栅极<span style=\"color:red\">TFT</span>特性不如底栅极,推测为<span style=\"color:red\">a-Si</span>/PVX界面不佳使得电子导通困难导致,未来可以借由改善<span style=\"color:red\">a-Si</span>/PVX界面工艺提升顶栅极<span style=\"color:red\">TFT</span>特性.","authors":[{"authorName":"林致远","id":"f7201c36-d636-4452-aa05-b6f122506311","originalAuthorName":"林致远"},{"authorName":"马骏","id":"d6c50acd-f742-4b97-87eb-f8db59d6988c","originalAuthorName":"马骏"},{"authorName":"林亮","id":"bafb542c-e623-403d-9e93-7a70a4b50df0","originalAuthorName":"林亮"},{"authorName":"杨成绍","id":"8b996b2a-a602-4ba7-a004-b340194ff9ab","originalAuthorName":"杨成绍"},{"authorName":"邹志翔","id":"d936b89b-9e48-440a-91c4-9595d38b78c8","originalAuthorName":"邹志翔"},{"authorName":"黄寅虎","id":"5b516cd0-200e-4e08-8f31-1a9cca0615ba","originalAuthorName":"黄寅虎"},{"authorName":"文锺源","id":"dc283040-5a61-42c9-b42c-5bd94bbc140a","originalAuthorName":"文锺源"},{"authorName":"王章涛","id":"492471ce-6fcb-4be4-ada3-48abcce2eee4","originalAuthorName":"王章涛"}],"doi":"10.3788/YJYXS20163105.0460","fpage":"460","id":"da8ce34b-f9f5-41fe-8a2b-d0c7d33b28af","issue":"5","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"f05816a1-fcbe-4516-8438-550dafc0edd4","keyword":"高开口率高级超维场转换技术","originalKeyword":"高开口率高级超维场转换技术"},{"id":"dce2bf02-027c-4d54-9198-e551c2e96e2c","keyword":"非晶硅","originalKeyword":"非晶硅"},{"id":"6109da46-76ef-4e19-b41b-dc43628fd418","keyword":"薄膜电晶体","originalKeyword":"薄膜电晶体"},{"id":"7c64e0cd-6eb6-4eb2-98d4-9de4f2f5df09","keyword":"双栅极","originalKeyword":"双栅极"}],"language":"zh","publisherId":"yjyxs201605006","title":"不同双栅极设计对<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H</span> <span style=\"color:red\">TFT</span>特性影响","volume":"31","year":"2016"},{"abstractinfo":"研究了将非晶硅薄膜晶体管(<span style=\"color:red\">a-Si</span>∶<span style=\"color:red\">H</span> <span style=\"color:red\">TFT</span>)在电路模拟程序(SPICE)中使用的亚阈值区模型,将亚阈值区分为亚阈值前区和亚阈值后区并建立了模型,对比了不同模型下的模拟结果,发现亚阈值区的<span style=\"color:red\">TFT</span>特性依赖于材料性质,而且亚阈值前区和亚阈值后区的特性受栅源电压VGS和漏源电压VDS的影响,呈指数变化.提出的新模型考虑了前界面态、后界面态、局域态、材料及制作工艺等因素,体现了该区域电流对漏源电压VDS强烈的依赖关系.使用新模型对实验数据的拟合结果优于以往的模型,能够比较精确地模拟亚阈值区的特性,可用来预测<span style=\"color:red\">a-Si</span>∶<span style=\"color:red\">H</span> <span style=\"color:red\">TFT</span>的性能,对<span style=\"color:red\">TFT</span>阵列的模拟设计具有重要价值.","authors":[{"authorName":"邵喜斌","id":"0fefed52-b38d-4616-8e05-bab4c69afea0","originalAuthorName":"邵喜斌"},{"authorName":"王丽娟","id":"bbbd0fd4-f8ab-4d03-9eee-2319f94f5141","originalAuthorName":"王丽娟"},{"authorName":"李梅","id":"99b0ad05-141a-4c82-9d26-0b3603a6ec6a","originalAuthorName":"李梅"}],"doi":"10.3969/j.issn.1007-2780.2005.04.001","fpage":"267","id":"099635bc-68ad-4a09-957a-d6fe01d51adf","issue":"4","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"5cd6d861-635e-4747-ad34-69f7330065ac","keyword":"<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H</span> <span style=\"color:red\">TFT</span>","originalKeyword":"a-Si:H TFT"},{"id":"d921a39d-1a2d-4dae-a4ff-a45269b11eff","keyword":"SPICE模型","originalKeyword":"SPICE模型"},{"id":"4b04cf21-882e-49be-aa44-78f7bd62350a","keyword":"亚阈值区","originalKeyword":"亚阈值区"}],"language":"zh","publisherId":"yjyxs200504001","title":"<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H</span> <span style=\"color:red\">TFT</span>亚阈值区SPICE模型的研究","volume":"20","year":"2005"},{"abstractinfo":"对OLED两管<span style=\"color:red\">a-Si</span>: <span style=\"color:red\">H</span>有源驱动技术中存储电容对器件寿命的影响进行了详细的讨论;结合驱动管的宽长比,从理论分析和SPICE模拟两个方面研究了存储电容对电路充电率、跳变电压和保持特性的影响,找出其间相互制约的数量关系,最后给出优化设计的参考值.","authors":[{"authorName":"李云飞","id":"39d7342d-7f88-4a26-8be2-7cda0195e0e7","originalAuthorName":"李云飞"},{"authorName":"王永生","id":"bf008c0f-1e99-4e5c-9001-34aeddf7ad4f","originalAuthorName":"王永生"},{"authorName":"张晓龙","id":"c2ae32fb-4e06-4069-a2ce-ad303241db48","originalAuthorName":"张晓龙"},{"authorName":"刘宏宇","id":"ea2a1496-8102-4a19-af0d-12efca917360","originalAuthorName":"刘宏宇"},{"authorName":"王刚","id":"1d9e210f-7112-41ef-b34e-41ab6b317105","originalAuthorName":"王刚"},{"authorName":"邵喜斌","id":"838c16ff-2658-4161-b961-98bc0cb88ebb","originalAuthorName":"邵喜斌"},{"authorName":"何大伟","id":"a81e17ab-1612-470a-a2e1-eebc9008c99b","originalAuthorName":"何大伟"}],"doi":"10.3969/j.issn.1007-2780.2008.05.010","fpage":"572","id":"d9d439ea-7678-470b-9e9e-a32d897acd45","issue":"5","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"e671c9da-5f9b-44ef-b7c9-273042879417","keyword":"OLED","originalKeyword":"OLED"},{"id":"5cce4aee-6453-4d78-af76-30c26d68f740","keyword":"有源驱动","originalKeyword":"有源驱动"},{"id":"2e27b692-d267-4d52-bb1f-72549c72e9b0","keyword":"存储电容","originalKeyword":"存储电容"},{"id":"d7c2fdb6-5f8a-420c-bd62-14c4ad3f7601","keyword":"充电率","originalKeyword":"充电率"}],"language":"zh","publisherId":"yjyxs200805010","title":"<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H</span> <span style=\"color:red\">TFT</span> OLED驱动电路中存储电容对显示性能的影响","volume":"23","year":"2008"},{"abstractinfo":"在模拟与仿真的基础上,根据MOS器件的源漏击穿特性,分析了用于<span style=\"color:red\">a-Si</span> <span style=\"color:red\">TFT</span>有源驱动阵列的外围保护电路的工作原理;同时根据所采用的有源OLED单元像素驱动电路的特点,确定了电源线、数据线、信号线上的相应保护电路形式.该保护电路可应用于OLED的有源驱动<span style=\"color:red\">TFT</span>阵列.","authors":[{"authorName":"张彤","id":"547788b2-212e-4010-8e18-5357ee2af149","originalAuthorName":"张彤"},{"authorName":"王丽杰","id":"416d6d6e-c3d7-4322-b642-0bfd100cf557","originalAuthorName":"王丽杰"},{"authorName":"许武","id":"62056c85-73eb-4b92-a959-e8106dddd044","originalAuthorName":"许武"},{"authorName":"郭小军","id":"b95e4921-7654-4050-85f6-9d89c20b6db5","originalAuthorName":"郭小军"},{"authorName":"赵毅","id":"ae937a2f-ad34-4a68-9b67-5182d21e0cb7","originalAuthorName":"赵毅"},{"authorName":"刘式墉","id":"95b650c2-2a67-4341-bd4e-69a8c570c7fc","originalAuthorName":"刘式墉"}],"doi":"10.3969/j.issn.1007-2780.2004.04.010","fpage":"286","id":"48ce628e-5a2e-4839-ab44-ff356d0d60a5","issue":"4","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"476842f3-5163-4091-999e-eee6fba4a486","keyword":"OLED","originalKeyword":"OLED"},{"id":"0e0fcde4-c4ca-4042-865a-97af486d6a6f","keyword":"<span style=\"color:red\">a-Si</span> <span style=\"color:red\">TFT</span>","originalKeyword":"a-Si TFT"},{"id":"015685ab-6fe7-442c-8d67-939c8efed751","keyword":"有源驱动","originalKeyword":"有源驱动"},{"id":"430c1d6c-b58e-4d00-9822-336009d24c4d","keyword":"穿通效应","originalKeyword":"穿通效应"},{"id":"694247a3-54af-42ba-aabe-fde6452811ec","keyword":"布图设计","originalKeyword":"布图设计"},{"id":"3add7f7d-e6a3-4cb9-ad64-4b04ef8d820d","keyword":"仿真模拟","originalKeyword":"仿真模拟"}],"language":"zh","publisherId":"yjyxs200404010","title":"用于OLED的<span style=\"color:red\">a-Si</span> <span style=\"color:red\">TFT</span>有源驱动阵列保护电路的分析","volume":"19","year":"2004"},{"abstractinfo":"采用传统的移动设备设计规则,基于PenTile RGBWTM算法开发了<span style=\"color:red\">a-Si</span> <span style=\"color:red\">TFT</span>移动液晶显示屏.将AFFS模式和PenTile RGBWTM算法相结合,制作的<span style=\"color:red\">TFT</span>液晶屏获得了超过200 cd/m2的高亮度,500:1的高对比度,以及达到VGA标准,可以清晰显示互联网网页的高分辨率.","authors":[{"authorName":"全眞永","id":"43a3aa1c-0488-40b3-8a2b-db38498f03c5","originalAuthorName":"全眞永"},{"authorName":"姜昌憲","id":"52209ee7-6018-4405-be70-a8f67ed367b6","originalAuthorName":"姜昌憲"},{"authorName":"安星俊","id":"fdbb8d04-1fb4-4447-a45c-05acf356741c","originalAuthorName":"安星俊"},{"authorName":"田正牧","id":"6e271245-7cd8-4643-9ab3-cd473aef8687","originalAuthorName":"田正牧"},{"authorName":"李貞烈","id":"5d25b062-1017-4bad-aa33-4412b0470e6a","originalAuthorName":"李貞烈"}],"doi":"10.3969/j.issn.1007-2780.2006.05.015","fpage":"474","id":"ac4ab985-28c4-46c8-b568-e6fef225b313","issue":"5","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"f6b45eb3-78e1-4357-a10e-37aacfc98566","keyword":"液晶显示器","originalKeyword":"液晶显示器"},{"id":"84923b5b-a5d0-41cf-b1e5-67cfdfdfe392","keyword":"<span style=\"color:red\">a-Si</span> <span style=\"color:red\">TFT</span>","originalKeyword":"a-Si TFT"},{"id":"03119bb7-9df1-49ee-a9ae-424f2cd49dec","keyword":"分辨率","originalKeyword":"分辨率"},{"id":"600b690c-1e68-49e0-b80e-2ff389c3a361","keyword":"AFFS","originalKeyword":"AFFS"},{"id":"cfe628a6-30e1-40fb-b8cc-5954f20f85d4","keyword":"PenTile RGBWTM","originalKeyword":"PenTile RGBWTM"},{"id":"a657d6c3-4738-4557-b329-1eaed02b9744","keyword":"移动","originalKeyword":"移动"}],"language":"zh","publisherId":"yjyxs200605015","title":"基于PenTile RGBWTM算法的高像素密度<span style=\"color:red\">a-Si</span> <span style=\"color:red\">TFT</span>移动液晶显示屏","volume":"21","year":"2006"},{"abstractinfo":"应用微波电子回旋共振化学气相沉积(MWECR CVD)方法,在较高速率下沉积了<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H</span>薄膜,用FTIR红外谱仪研究<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H</span>薄膜的结构特性与衬底温度、氢稀释比、光学带隙的对应关系,并对2000cm-1附近的特征吸收峰用高斯函数进行了拟合分析,获得了沉积高质量<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H</span>薄膜的最佳工艺条件.","authors":[{"authorName":"李瀛","id":"37750480-460e-475a-971d-b61845633512","originalAuthorName":"李瀛"},{"authorName":"刘毅","id":"1dddb158-dfc0-48fa-ae1b-c66cf922b12b","originalAuthorName":"刘毅"},{"authorName":"阴生毅","id":"5a2e26e3-8695-48e5-86bd-f613602c2439","originalAuthorName":"阴生毅"},{"authorName":"胡跃辉","id":"46491895-a2f9-4e34-b66c-f77945c3176d","originalAuthorName":"胡跃辉"},{"authorName":"宋雪梅","id":"42dfeb60-dc8a-4acd-9a16-72c885fdca02","originalAuthorName":"宋雪梅"},{"authorName":"邓金祥","id":"47cbad22-08d5-4f14-a693-42b4b8105f65","originalAuthorName":"邓金祥"},{"authorName":"朱秀红","id":"a8d3c41b-dcec-496c-a058-420a6d3f1373","originalAuthorName":"朱秀红"},{"authorName":"陈光华","id":"2857b5f8-9db9-4267-9663-c4f8280852ce","originalAuthorName":"陈光华"}],"doi":"","fpage":"3148","id":"23dfa8db-80f7-4e9d-8e51-5fd3dcf9885a","issue":"z1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"1e9f72f0-9fc8-4f01-8a20-69f581394ee2","keyword":"氢化非晶硅","originalKeyword":"氢化非晶硅"},{"id":"604635b9-5ea2-46bc-acee-c9c9f81308d5","keyword":"MWECR","originalKeyword":"MWECR"},{"id":"11d1076d-8623-41cd-97a8-c08df8ee93ae","keyword":"CVD","originalKeyword":"CVD"},{"id":"c78592f4-cc88-4939-84a2-23eb5ed882d8","keyword":"氢含量","originalKeyword":"氢含量"}],"language":"zh","publisherId":"gncl2004z1885","title":"微波ECR CVD法制备<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H</span>膜的氢含量研究","volume":"35","year":"2004"},{"abstractinfo":"氢化非晶硅(<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H</span>)是一种重要的光敏感薄膜材料,其稳定性的好坏是决定能否应用于器件的重要因素之一.介绍了<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H</span>薄膜稳定性的研究进展,论述了<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H</span>薄膜的稳定性与<span style=\"color:red\">Si-Si</span>弱键的关系,分析了先致衰退效应(S-W效应)产生的几种机理,提出了在薄膜制备和后处理过程中消除或减少<span style=\"color:red\">Si-Si</span>弱键以提高<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H</span>薄膜稳定性的方法.","authors":[{"authorName":"廖乃镘","id":"2961280a-2015-4233-a65f-3ae63a2559a0","originalAuthorName":"廖乃镘"},{"authorName":"李伟","id":"ae989b39-7a85-4fca-9ec1-a485aa1572e8","originalAuthorName":"李伟"},{"authorName":"蒋亚东","id":"9aa989f5-23aa-47ea-a7b6-b5bfcb9cd279","originalAuthorName":"蒋亚东"},{"authorName":"匡跃军","id":"92788e63-8030-4b2d-bd47-bf8ea0708e38","originalAuthorName":"匡跃军"},{"authorName":"李世彬","id":"3b2f026b-459b-4fd5-8ef3-943a9fb043db","originalAuthorName":"李世彬"},{"authorName":"吴志明","id":"3346283e-542c-4833-a28d-f04e5920706c","originalAuthorName":"吴志明"}],"doi":"","fpage":"21","id":"0d91778a-4728-47b6-8062-abb140c5a6b3","issue":"5","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"6831668e-30a7-4363-bd30-3816a3253ad9","keyword":"氢化非晶硅","originalKeyword":"氢化非晶硅"},{"id":"bfc5d868-9405-4c94-8e63-6384e741bd63","keyword":"稳定性","originalKeyword":"稳定性"},{"id":"80395e11-b198-4638-b89a-c5a3cce5ea98","keyword":"光致衰退效应","originalKeyword":"光致衰退效应"},{"id":"3213ad3d-ff3f-4579-9023-6f6237384c7b","keyword":"物理模型","originalKeyword":"物理模型"},{"id":"6c0612fb-8133-4b44-bb22-5b9d46d1e5ea","keyword":"稳定化处理","originalKeyword":"稳定化处理"}],"language":"zh","publisherId":"cldb200705006","title":"氢化非晶硅(<span style=\"color:red\">a-Si</span>:<span style=\"color:red\">H</span>)薄膜稳定性的研究进展","volume":"21","year":"2007"}],"totalpage":3713,"totalrecord":37123}