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style=\"color:red\">丽</span>","id":"6a7e07d0-a017-4629-8a34-c9f023d32111","originalAuthorName":"王丽"},{"authorName":"陈秀芳","id":"229b2ac3-86e8-4bcf-ab45-d9c306c7acbf","originalAuthorName":"陈秀芳"},{"authorName":"徐现刚","id":"33602975-7a27-4588-aac6-f155824aaa4f","originalAuthorName":"徐现刚"},{"authorName":"<span style=\"color:red\">王</span>继扬","id":"010471e9-e4d4-4671-81cb-da1acabd4657","originalAuthorName":"王继扬"},{"authorName":"蒋民华","id":"b90d4bc0-75ff-4e51-b523-ec111d915fb8","originalAuthorName":"蒋民华"},{"authorName":"田玉莲","id":"afe7c7bb-6dd9-44ee-8987-31628312c892","originalAuthorName":"田玉莲"},{"authorName":"黄万霞","id":"bdd047ff-1f17-457d-a436-55fc6959ebfd","originalAuthorName":"黄万霞"},{"authorName":"朱佩平","id":"fc3fd383-e3b8-413a-a1c6-2d95f0154bc0","originalAuthorName":"朱佩平"}],"doi":"","fpage":"591","id":"0b7a07d8-cf50-4bd3-80cb-959abb4bc058","issue":"4","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"49c9358d-0fab-4dd2-9127-2ddbf8d79eaf","keyword":"多型夹杂","originalKeyword":"多型夹杂"},{"id":"eb25db68-b51d-45f2-825b-dea07301631c","keyword":"同步辐射白光形貌术","originalKeyword":"同步辐射白光形貌术"},{"id":"ef49d24c-8ee4-4bce-95b0-7728126db2a9","keyword":"SiC单晶","originalKeyword":"SiC单晶"}],"language":"zh","publisherId":"gncl200604025","title":"同步辐射白光形貌术观察SiC单晶中的微小多型结构","volume":"37","year":"2006"},{"abstractinfo":"半导体晶片的加工质量和精度,直接影响到器件的性能.本文提出了一种超精密加工SiC晶片的方法,并详细论述了化学机械抛光的原理.加工后的SiC单晶片,平整度为±3μm,粗糙度＜5nm,且应力较小.","authors":[{"authorName":"李娟","id":"30b9fff5-d8d4-4607-82e7-d2032620be4d","originalAuthorName":"李娟"},{"authorName":"陈秀芳","id":"dc77ad11-a7ab-45d6-8480-a9bb1e575e5e","originalAuthorName":"陈秀芳"},{"authorName":"马德营","id":"7b8db1f8-7d2e-406f-827e-cb8898315d9d","originalAuthorName":"马德营"},{"authorName":"姜守振","id":"9d336b56-0c15-496a-a0e4-dc3f7946925d","originalAuthorName":"姜守振"},{"authorName":"李现祥","id":"ea9f26e8-84ed-4b20-85a0-bab6ab36f2b6","originalAuthorName":"李现祥"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">丽</span>","id":"1495e9b7-8421-45c1-a662-b1fa26ec7034","originalAuthorName":"王丽"},{"authorName":"董捷","id":"a2e16995-0abd-46a3-ba92-4df86052bfd2","originalAuthorName":"董捷"},{"authorName":"胡小波","id":"2d0af090-41a7-49d8-bdd9-67f1b30b2437","originalAuthorName":"胡小波"},{"authorName":"徐现刚","id":"f69374ed-c527-49c8-9365-d1ad7ae0b610","originalAuthorName":"徐现刚"},{"authorName":"<span style=\"color:red\">王</span>继扬","id":"a0d15d01-d171-434c-80f6-af957d5d0144","originalAuthorName":"王继扬"},{"authorName":"蒋民华","id":"7c11f61b-f0bf-4380-be6b-ec4bc86ee769","originalAuthorName":"蒋民华"}],"doi":"","fpage":"70","id":"8a8cb27d-78ea-4a49-a882-8ced932ea4ba","issue":"1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"12c14d91-5075-47e6-8a14-6cf39bb3c6b3","keyword":"化学机械抛光","originalKeyword":"化学机械抛光"},{"id":"a110943c-de2f-4475-8111-f0ad3c069919","keyword":"粗糙度","originalKeyword":"粗糙度"},{"id":"5c4b49d2-557e-4f62-a273-9f3e77696c83","keyword":"平整度","originalKeyword":"平整度"}],"language":"zh","publisherId":"gncl200601021","title":"SiC单晶片的超精密加工","volume":"37","year":"2006"},{"abstractinfo":"采用同步辐射单色光形貌术观察了6H-SiC单晶中的微管缺陷,发现晶片中Burgers矢量为1c的螺位错具有较高的密度.此外,还观察到对应较大Burgers矢量的微管.基于微管附近的应变场,并根据衍射几何,模拟计算了一系列具有不同Burgers矢量的微管在形貌像中的直径,计算结果与实验观察符合较好.","authors":[{"authorName":"胡小波","id":"e1ae7b7b-77e3-4be0-9660-f7033c918c93","originalAuthorName":"胡小波"},{"authorName":"徐现刚","id":"7c500fae-4706-4013-b144-e23b37959153","originalAuthorName":"徐现刚"},{"authorName":"李现祥","id":"1625dd10-e633-4711-bb7f-c0e8801d0def","originalAuthorName":"李现祥"},{"authorName":"董捷","id":"cc38ddd6-9f6b-4024-80f7-fef45d7be6b5","originalAuthorName":"董捷"},{"authorName":"韩荣江","id":"1e798df9-be81-44cb-b736-09864ce2d389","originalAuthorName":"韩荣江"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">丽</span>","id":"170d6aed-fcda-455b-a0e7-56d1340aeb55","originalAuthorName":"王丽"},{"authorName":"李娟","id":"4f8fe6b1-6ea9-4aea-8d64-69a49edb7b43","originalAuthorName":"李娟"},{"authorName":"<span style=\"color:red\">王</span>继扬","id":"e6bb1807-f170-49b1-9a0c-275e12f16674","originalAuthorName":"王继扬"},{"authorName":"田玉莲","id":"1b29fbff-cc73-4d4a-82ce-d43fd3ca0eea","originalAuthorName":"田玉莲"},{"authorName":"黄万霞","id":"4e35003c-c26b-4207-9678-9a30fa8c75b2","originalAuthorName":"黄万霞"},{"authorName":"朱佩平","id":"c338e5aa-5039-43f3-8b28-d0c34668a3a4","originalAuthorName":"朱佩平"}],"doi":"10.3969/j.issn.1000-985X.2004.03.012","fpage":"332","id":"bcf4cd9c-9e4d-4835-8c25-317bdbed7609","issue":"3","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"01134e34-bbb0-4891-976f-0ceef5339753","keyword":"同步辐射单色光形貌术","originalKeyword":"同步辐射单色光形貌术"},{"id":"d9e6e277-117b-47ef-a1d7-7662e7d2ab9e","keyword":"6H-SiC单晶","originalKeyword":"6H-SiC单晶"},{"id":"ff953df6-0c5c-4aaa-8b6b-57949b87e8ee","keyword":"微管","originalKeyword":"微管"},{"id":"e0040f1a-3596-48cb-ba1e-7075a00c1b2a","keyword":"模拟计算","originalKeyword":"模拟计算"}],"language":"zh","publisherId":"rgjtxb98200403012","title":"同步辐射单色光形貌术观察6H-SiC单晶中的微管缺陷","volume":"33","year":"2004"},{"abstractinfo":"采用溶胶-凝胶法结合匀胶旋涂工艺在复合基片(Pt/Ti/SiO2/Si)上制备了钴铁氧体(CoFe2O4)薄膜,利用XRD、SEM、VSM分析了薄膜的微结构以及磁性能,研究了不同退火温度对钴铁氧体薄膜的结构和磁性能的影响.结果表明,钴铁氧体在500℃时开始形成尖晶石相.随着退火温度的增高,钴铁氧体晶粒逐渐长大,饱和磁化强度和矫顽力逐渐增强,到600℃时,尖晶石相已经非常明显,晶粒尺寸大小均一,饱和磁化强度和矫顽力分别为427.48 emu·cm-3和1224.11Oe,当退火温度提高到700℃时,晶粒进一步长大,但是薄膜中出现反铁磁相α-Fe2O3,而且薄膜表面出现了气孔和晶粒大小不均匀等缺陷,导致饱和磁化强度和矫顽力下降.","authors":[{"authorName":"于桂洋","id":"655d5014-d58a-42fb-8ca6-7425021505b8","originalAuthorName":"于桂洋"},{"authorName":"石敏","id":"587ea182-577c-4da8-af5d-f47c64bef2c8","originalAuthorName":"石敏"},{"authorName":"蒋云志","id":"68c772ed-a5e7-4759-8b3f-d8c0a1d161a0","originalAuthorName":"蒋云志"},{"authorName":"苏海林","id":"31e2520b-d3c3-46c5-8d23-7bd7007481aa","originalAuthorName":"苏海林"},{"authorName":"左如忠","id":"0f49e353-b6e1-46da-b88b-8c65f170ff79","originalAuthorName":"左如忠"},{"authorName":"许育东","id":"daa40d2c-4dde-4b06-af96-da2c642c8d7b","originalAuthorName":"许育东"},{"authorName":"伍光","id":"6264de77-ed17-4a25-89a8-0dd19720fabe","originalAuthorName":"伍光"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">丽</span>","id":"1668afa9-0eae-466b-afb2-d8fc90669699","originalAuthorName":"王丽"},{"authorName":"庞志成","id":"24965702-9aae-4d4f-8a29-8422e8f990dd","originalAuthorName":"庞志成"},{"authorName":"陈云帮","id":"6bc4ba83-bb0f-49c7-b673-6c9e3e0bf586","originalAuthorName":"陈云帮"}],"doi":"","fpage":"37","id":"1a3c5047-5ae1-499f-a908-c83f4a53cd5a","issue":"2","journal":{"abbrevTitle":"JSGNCL","coverImgSrc":"journal/img/cover/JSGNCL.jpg","id":"46","issnPpub":"1005-8192","publisherId":"JSGNCL","title":"金属功能材料"},"keywords":[{"id":"ff8f07b8-be77-4fb4-98b4-f75b09613b1a","keyword":"CoFe2O4薄膜","originalKeyword":"CoFe2O4薄膜"},{"id":"1a352123-6c7a-45d1-81d9-03f327e897b9","keyword":"退火温度","originalKeyword":"退火温度"},{"id":"410a08e8-c012-492a-b9c8-5aa98eccb734","keyword":"微结构","originalKeyword":"微结构"},{"id":"f574815e-aad3-4f90-8992-581c6f5ade66","keyword":"磁性","originalKeyword":"磁性"}],"language":"zh","publisherId":"jsgncl201102009","title":"退火温度对钴铁氧体薄膜结构和性能的影响","volume":"18","year":"2011"},{"abstractinfo":"本文模拟了升华法生长6H-SiC单晶的不同温度场,并进行了相应的生长实验.结果表明:改变石墨坩埚和感应线圈的相对位置,可以改变温度场形状;下移石墨坩埚;可以增大温度场径向温度梯度.在不同的径向温度梯度下,6H-SiC晶体分别以凹界面、平界面和凸界面生长.晶体生长界面的形状和速率影响晶体多型的产生,在平界面,生长速率小于300μm/h的晶体生长条件下,可获得无多型的高质量6H-SiC单晶.","authors":[{"authorName":"李现祥","id":"7eccaa41-17da-4b72-acce-983f45e5f7dc","originalAuthorName":"李现祥"},{"authorName":"胡小波","id":"626ed9f4-cfed-4f8b-ac8e-0dd752cb6d74","originalAuthorName":"胡小波"},{"authorName":"董捷","id":"fe666138-5599-4793-b56d-819863fa9f03","originalAuthorName":"董捷"},{"authorName":"姜守振","id":"ab8bfa2e-17ee-412c-8987-48ad57a364b4","originalAuthorName":"姜守振"},{"authorName":"李娟","id":"fd1e4c57-d558-4c47-a40c-c1e1d694d25d","originalAuthorName":"李娟"},{"authorName":"陈秀芳","id":"e9dbcf4d-84ee-4d66-80a9-3fc984173afa","originalAuthorName":"陈秀芳"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">丽</span>","id":"c38c5294-2e58-4b5f-a35f-3ed564652fd1","originalAuthorName":"王丽"},{"authorName":"徐现刚","id":"e6eef054-4b83-4a89-afb1-492df74c020f","originalAuthorName":"徐现刚"},{"authorName":"<span style=\"color:red\">王</span>继扬","id":"544dc796-db85-4dd8-b3d9-46c3ca9dfd85","originalAuthorName":"王继扬"},{"authorName":"蒋民华","id":"c3695d78-87b9-4e7d-af31-95743fd57be4","originalAuthorName":"蒋民华"}],"doi":"10.3969/j.issn.1000-985X.2006.01.009","fpage":"41","id":"43980fda-379f-4127-b4f5-c276dccd9570","issue":"1","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"fa029e08-401a-4338-b70f-af2eaa29d765","keyword":"温度场","originalKeyword":"温度场"},{"id":"fe38c2a5-6415-409b-b247-e0758ad56683","keyword":"6H-SiC单晶","originalKeyword":"6H-SiC单晶"},{"id":"df35a171-b0ba-45a8-8a78-073d8eea08de","keyword":"径向温度梯度","originalKeyword":"径向温度梯度"},{"id":"7a56096b-98a0-4f10-a3c9-8c090fbdeb30","keyword":"多型","originalKeyword":"多型"}],"language":"zh","publisherId":"rgjtxb98200601009","title":"6H-SiC单晶生长温度场优化及多型控制","volume":"35","year":"2006"},{"abstractinfo":"利用升华法在高温低压下生长大直径SiC单晶.通过实验发现:在相同的轴向温度梯度下,SiC晶体平均生长速率随籽晶温度的升高而变大.通过减小轴向温度梯度,降低晶体生长界面的径向过饱和度分布,可以抑制多型的生长.通过优化温场的径向温度梯度,利用φ50mm的籽晶进行生长,得到了φ57mm的SiC单晶,实现了晶体的扩径生长.","authors":[{"authorName":"李现祥","id":"af4cb100-301a-44e8-bfb7-8a9cdf56cb3d","originalAuthorName":"李现祥"},{"authorName":"李娟","id":"4ab560ef-b792-4b47-a6cb-caa62f4f4fe7","originalAuthorName":"李娟"},{"authorName":"董捷","id":"47c6cf97-ad94-4383-8719-b1f9a2bef982","originalAuthorName":"董捷"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">丽</span>","id":"5a780e0a-7722-45c8-a759-aba81338db7b","originalAuthorName":"王丽"},{"authorName":"姜守振","id":"8efe4345-707b-4b4f-b5d9-9a678716805e","originalAuthorName":"姜守振"},{"authorName":"韩荣江","id":"a5c0ebf6-7124-47be-945a-05c2d144f9e7","originalAuthorName":"韩荣江"},{"authorName":"徐现刚","id":"36e625d7-db95-44c3-8c34-1275ebeb641b","originalAuthorName":"徐现刚"},{"authorName":"<span style=\"color:red\">王</span>继扬","id":"6d51f6e2-7cb9-4092-bc0b-22da16735e32","originalAuthorName":"王继扬"},{"authorName":"胡小波","id":"a3542468-18b6-4363-ac7c-2038c57f8b9b","originalAuthorName":"胡小波"},{"authorName":"蒋民华","id":"54a1fc7b-4676-4397-b71a-8c2206963733","originalAuthorName":"蒋民华"}],"doi":"","fpage":"3084","id":"77c61f7c-d98f-480f-8784-c1f49e2daa84","issue":"z1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"540ad5fe-bd37-44d7-bc30-c7119094e5f1","keyword":"SiC单晶","originalKeyword":"SiC单晶"},{"id":"354e7b39-540a-48a9-bccb-f4df61cb9586","keyword":"温度及温度梯度","originalKeyword":"温度及温度梯度"},{"id":"f6e09b12-2201-4f6e-8032-6c0f5cc93d7f","keyword":"生长速率","originalKeyword":"生长速率"},{"id":"ac68f37d-25b9-4b07-b002-fcd1ff790332","keyword":"多型","originalKeyword":"多型"},{"id":"f4819ecd-1785-4ff5-a2bd-2b79ef6762d9","keyword":"扩径生长","originalKeyword":"扩径生长"}],"language":"zh","publisherId":"gncl2004z1866","title":"温度及温度梯度对SiC单晶生长的影响","volume":"35","year":"2004"},{"abstractinfo":"利用显微激光拉曼光谱法对掺氮6H-SiC单晶中的寄生多型体进行了鉴别,结果表明其中有4H-SiC和15R-SiC两种寄生多型体.不同SiC多型体的纵光学声子与等离子体激元的耦合模(LOPC模)表明:在掺氮6H-SiC单晶的生长条件下,6H-SiC的掺氮效应与4H-SiC存在明显差别,而与15R-SiC的掺氮效应相似.","authors":[{"authorName":"韩荣江","id":"75223116-bb9f-4a29-a471-89eb0a092f01","originalAuthorName":"韩荣江"},{"authorName":"<span style=\"color:red\">王</span>继扬","id":"a30e5f71-6177-4b40-9582-ddfd096bcac8","originalAuthorName":"王继扬"},{"authorName":"徐现刚","id":"883e92f3-eceb-4c7f-8292-17ff4af4edad","originalAuthorName":"徐现刚"},{"authorName":"胡小波","id":"f0a5e94a-1902-4883-970a-0d9ea49a686a","originalAuthorName":"胡小波"},{"authorName":"董捷","id":"165a6c34-89f2-444d-a565-352e593e1a8d","originalAuthorName":"董捷"},{"authorName":"李现祥","id":"2dfa8764-06b9-49c4-9f5a-2baf964f64dc","originalAuthorName":"李现祥"},{"authorName":"李娟","id":"86906d52-b9de-4579-b306-62e9c9b5515e","originalAuthorName":"李娟"},{"authorName":"姜守振","id":"24a145c7-d610-4d8c-9dcb-46fa78ec424e","originalAuthorName":"姜守振"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">丽</span>","id":"3eb24bb4-2507-44ae-85fc-ab11e9a1d033","originalAuthorName":"王丽"},{"authorName":"蒋民华","id":"79cafe37-3eb8-462f-9f55-aeccdec93bbf","originalAuthorName":"蒋民华"}],"doi":"10.3969/j.issn.1000-985X.2004.06.001","fpage":"877","id":"798e99a7-1344-4962-84f8-9b932df41fb7","issue":"6","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"997e24bf-d780-40b3-acc2-189a13a27ce8","keyword":"显微激光拉曼光谱法","originalKeyword":"显微激光拉曼光谱法"},{"id":"496af1aa-cd85-4c6a-bcd4-84d3698fef36","keyword":"碳化硅单晶","originalKeyword":"碳化硅单晶"},{"id":"56daa154-d341-4271-821b-71da1ba9b60d","keyword":"多型体鉴别","originalKeyword":"多型体鉴别"},{"id":"62414961-6136-42fe-8652-5fffd6b6591a","keyword":"掺氮效应","originalKeyword":"掺氮效应"}],"language":"zh","publisherId":"rgjtxb98200406001","title":"显微激光拉曼光谱法鉴别SiC晶体的多型体结构","volume":"33","year":"2004"},{"abstractinfo":"Sr和Mg掺杂的稀土钙钛矿型氧化物LaGaO3(LSGM)是具有广泛应用前景的固体电解质材料.本文综述了LSGM薄膜制备的主要方法,讨论了各种方法的优缺点,最后对LSGM薄膜制备方法的进一步研究方向进行了展望.","authors":[{"authorName":"石敏","id":"3d026469-ced1-4de8-9b6e-499e574e05a3","originalAuthorName":"石敏"},{"authorName":"庞志成","id":"6085d57a-9b2f-455d-980e-089646d9082d","originalAuthorName":"庞志成"},{"authorName":"蒋云志","id":"cd91f081-db91-4648-850a-1301cc2af285","originalAuthorName":"蒋云志"},{"authorName":"左如忠","id":"a06f7324-7f96-47ee-97c2-8629ba03a304","originalAuthorName":"左如忠"},{"authorName":"许育东","id":"2124fcbe-6e9a-4407-a3bd-ab2f0c58f7dc","originalAuthorName":"许育东"},{"authorName":"<span style=\"color:red\">王</span>雷","id":"35026af1-a2c6-4040-86a5-1cb5a47e0112","originalAuthorName":"王雷"},{"authorName":"于桂洋","id":"e017acd4-e220-4322-8459-f5ef2b7d63d7","originalAuthorName":"于桂洋"},{"authorName":"陈云帮","id":"51944b32-619f-4bea-a65f-faa9e7c6bfcd","originalAuthorName":"陈云帮"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">丽</span>","id":"938b17ca-e78f-4884-8130-52f7215e366a","originalAuthorName":"王丽"},{"authorName":"伍光","id":"4ab5cd0e-04b0-441b-bfb4-6b2885207b23","originalAuthorName":"伍光"}],"doi":"","fpage":"84","id":"ca2c104b-9181-4ab5-9bb1-097b9db259d8","issue":"3","journal":{"abbrevTitle":"JSGNCL","coverImgSrc":"journal/img/cover/JSGNCL.jpg","id":"46","issnPpub":"1005-8192","publisherId":"JSGNCL","title":"金属功能材料"},"keywords":[{"id":"5602620c-bca5-4a7f-9638-a2ebb020a9fb","keyword":"固体电解质","originalKeyword":"固体电解质"},{"id":"8234a761-a2f6-4282-9805-568daa08f869","keyword":"LSGM薄膜","originalKeyword":"LSGM薄膜"},{"id":"f005f964-82a7-42ba-b313-da076d567a44","keyword":"薄膜制备方法","originalKeyword":"薄膜制备方法"}],"language":"zh","publisherId":"jsgncl201103020","title":"LSGM固体电解质薄膜制备的研究进展","volume":"18","year":"2011"},{"abstractinfo":"2-2型磁电复合薄膜材料可以实现磁和电的直接转换,具有较大的磁电转换效应,在电子器件中有着广泛的应用前景.本文详细阐述了有关2-2型磁电复合薄膜的制备及其在铁电、铁磁性能以及磁电祸合效应研究方面的最新进展,并提出了目前磁电复合薄膜研究中存在的问题和进一步的研究方向.","authors":[{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">丽</span>","id":"474e1d35-89f8-4d06-9b9d-d4da7f9743de","originalAuthorName":"王丽"},{"authorName":"石敏","id":"4b648f2a-b065-4c2a-b59b-1b6cab99fdf9","originalAuthorName":"石敏"},{"authorName":"周国庆","id":"b0f21e76-d290-4620-aa72-56f50e1df63e","originalAuthorName":"周国庆"},{"authorName":"左如忠","id":"a2a6a69e-546d-417f-8bfa-c0f2a2d25a07","originalAuthorName":"左如忠"},{"authorName":"许育东","id":"cce54f04-50a7-44a4-8e68-69215ac9c70b","originalAuthorName":"许育东"},{"authorName":"苏海林","id":"085d5f86-b19a-4330-817e-9f82948404b3","originalAuthorName":"苏海林"},{"authorName":"伍光","id":"50063f60-692d-4d13-b7ac-1077d356644d","originalAuthorName":"伍光"},{"authorName":"于桂洋","id":"0b2266e4-018c-4c81-91c6-82368caedb53","originalAuthorName":"于桂洋"},{"authorName":"于涛","id":"fab44de5-5c99-4df1-9ff8-73e440e6d809","originalAuthorName":"于涛"}],"doi":"","fpage":"93","id":"04f50b49-2147-483f-b58c-eb0eb5d5421f","issue":"6","journal":{"abbrevTitle":"JSGNCL","coverImgSrc":"journal/img/cover/JSGNCL.jpg","id":"46","issnPpub":"1005-8192","publisherId":"JSGNCL","title":"金属功能材料"},"keywords":[{"id":"143c8054-c855-430e-ac2d-f42a89a4758b","keyword":"复合薄膜","originalKeyword":"复合薄膜"},{"id":"30cd10f2-ca7f-4812-8235-42402e35958d","keyword":"脉冲激光沉积","originalKeyword":"脉冲激光沉积"},{"id":"33a35697-716f-4809-91b5-8fafe7132d52","keyword":"射频磁控溅射","originalKeyword":"射频磁控溅射"},{"id":"171f05cf-bcca-4220-a892-dd1de5b20648","keyword":"溶胶-凝胶","originalKeyword":"溶胶-凝胶"}],"language":"zh","publisherId":"jsgncl201006021","title":"2-2型磁电复合薄膜材料研究现状","volume":"17","year":"2010"},{"abstractinfo":"为了解东江淡水河流域重金属污染状况，测定地表水和沉积物中7种典型重金属锰、锌、铜、镍、铬、铅和汞（ Mn、Zn、Cu、Ni、Cr、Pb、Hg）的含量水平，并采用地累积指数法和潜在生态危害指数法，评价沉积物环境质量状况．结果表明，淡水河地表水中 Mn、Zn、Cu、Ni、Cr、Pb 和 Hg 的平均值浓度分别为305．00、151．50、67．50、56．50、28．50、15．00、0．07μg·L－1；淡水河流域地表水重金属含量处于较低水平，且大部分重金属枯水期浓度高于丰水期．沉积物中Mn、Zn、Cu、Ni、Cr、Pb和Hg的平均值浓度分别为714．00、993．50、289．50、188．50、301．50、118．50、0．43 mg·kg－1．表层沉积物中Cu和Hg是污染最为严重的金属，Mn和Cr的污染水平相对较低，除Cu枯水期浓度明显高于丰水期外，其它6种重金属丰水期和枯水期差异较小．淡水河地表水和沉积物重金属平均含量整体高于西枝江和东江，且上游污染程度较高．相关性分析和主成分分析结果表明Zn、Ni、Cr、Mn和Pb的污染来源于流域内盛行的电子电镀产业，Hg和Cu的污染来自于其它产业．潜在生态风险结果表明，淡水河中游具有极强的生态危害，西枝江具有轻微的生态危害，东江有强的生态危害，但数值处于强的生态危害范围的下限．淡水河上中游及其支流周边工业聚集区是重金属污染的最主要来源．","authors":[{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">丽</span>","id":"94260752-2f6d-4d0d-8743-13f15cea2df0","originalAuthorName":"王丽"},{"authorName":"陈凡","id":"f2a901ad-6eca-495e-aff5-c451317c363c","originalAuthorName":"陈凡"},{"authorName":"马千里","id":"cb192cab-9e47-49c4-aa56-f4cec1cd76a7","originalAuthorName":"马千里"},{"authorName":"范中亚","id":"e51149aa-35ce-4541-a226-6813aa8b924b","originalAuthorName":"范中亚"},{"authorName":"姚玲爱","id":"f1c3bf4a-0b76-49b9-bd6c-91826d24ebf8","originalAuthorName":"姚玲爱"},{"authorName":"许振成","id":"bc57e229-697b-4e62-aae1-3e1429cc1f84","originalAuthorName":"许振成"},{"authorName":"谭万春","id":"6dbe0084-94a6-4f3b-b434-6e84e52fce20","originalAuthorName":"谭万春"},{"authorName":"赵学敏","id":"67778bc5-7fa2-4092-ab57-74f785ab48f9","originalAuthorName":"赵学敏"}],"doi":"10.7524/j.issn.0254-6108.2015.09.2015012703","fpage":"1671","id":"24b7acbc-7b30-4542-91d1-e3817a28b07d","issue":"9","journal":{"abbrevTitle":"HJHX","coverImgSrc":"journal/img/cover/HJHX.jpg","id":"43","issnPpub":"0254-6108","publisherId":"HJHX","title":"环境化学   "},"keywords":[{"id":"d257a87b-ceab-4bdf-bbec-ecb2e9998fd1","keyword":"淡水河","originalKeyword":"淡水河"},{"id":"a06bcf20-ca32-42be-adec-e884dca771b4","keyword":"地表水","originalKeyword":"地表水"},{"id":"a2dcad49-52f5-4ff3-b3a4-7dd6128dceb5","keyword":"沉积物","originalKeyword":"沉积物"},{"id":"5fbbd7cd-1de9-4582-aa07-473cbb7af8f1","keyword":"重金属","originalKeyword":"重金属"},{"id":"fb22bbcf-0f97-4657-969c-58361d8ff6bf","keyword":"污染特征","originalKeyword":"污染特征"}],"language":"zh","publisherId":"hjhx201509013","title":"东江淡水河流域地表水和沉积物重金属污染特征及风险评价?","volume":"","year":"2015"}],"totalpage":26,"totalrecord":259}