{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"通过对最近两次<span style=\"color:red\">SOI</span>国际会议的分析，综述了<span style=\"color:red\">SOI</span>技术取得的新进展。三种<span style=\"color:red\">SOI</span>技术SIMOX，Smart－cut和BESOI已走向商业化,在高温与辐射环境下工作的<span style=\"color:red\">SOI</span>电路也走向了市场。近来人们更加重视<span style=\"color:red\">SOI</span>技术，是因为<span style=\"color:red\">SOI</span>在实现低压、低功耗电路上的突出优越性。","authors":[{"authorName":"林成鲁","id":"acbdbffd-f4f6-47f9-b897-d2a33a2e051a","originalAuthorName":"林成鲁"}],"doi":"10.3969/j.issn.1007-4252.2001.01.001","fpage":"1","id":"06964142-5418-4869-8631-9f0ddb511f1c","issue":"1","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"39863e2f-5664-48f2-84e6-87bed3209181","keyword":"<span style=\"color:red\">SOI</span>","originalKeyword":"SOI"},{"id":"81c71e08-5836-4726-86c0-ca7990c1b78e","keyword":"SIMOX","originalKeyword":"SIMOX"},{"id":"86a41416-982e-457a-a6d9-b2600501fdad","keyword":"Smart－cut","originalKeyword":"Smart－cut"},{"id":"38b3e967-3ac5-4566-8d30-2d342d616313","keyword":"低压低功耗电路","originalKeyword":"低压低功耗电路"}],"language":"zh","publisherId":"gnclyqjxb200101001","title":"<span style=\"color:red\">SOI</span>技术的新进展","volume":"7","year":"2001"},{"abstractinfo":"重点介绍器件进入纳米尺度后出现的 MOSFET/<span style=\"color:red\">SOI</span>器件的新结构,如超薄 <span style=\"color:red\">SOI</span>器件、双栅 MOSFET、 FinFET和应变沟道等 <span style=\"color:red\">SOI</span>器件,并对它们的性能进行了分析.","authors":[{"authorName":"张正选","id":"52df4262-ba6f-4b46-a40e-1acf7d9da110","originalAuthorName":"张正选"},{"authorName":"林成鲁","id":"985f3fdd-95d0-46b4-8f08-c853aea317c9","originalAuthorName":"林成鲁"}],"doi":"10.3969/j.issn.1007-4252.2003.02.024","fpage":"222","id":"5aab5ccb-8d08-4b9f-a5aa-4816cc855038","issue":"2","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"77b4c97e-cf58-4062-8936-c898ca771813","keyword":"纳米 MOSFET","originalKeyword":"纳米 MOSFET"},{"id":"aed28ebb-ac97-4af3-810c-9444bdc6fbd9","keyword":"<span style=\"color:red\">SOI</span>","originalKeyword":"SOI"},{"id":"69456927-3329-49c7-9a27-9d095c10038a","keyword":"双栅 MOSFET","originalKeyword":"双栅 MOSFET"},{"id":"0c625703-8111-416b-9ac0-d2f82c8de3c2","keyword":"FinFET","originalKeyword":"FinFET"},{"id":"80660f86-d0d6-40f9-98a9-cb53bbcea3b1","keyword":"SiGe/Si","originalKeyword":"SiGe/Si"}],"language":"zh","publisherId":"gnclyqjxb200302024","title":"纳米 MOSFET/<span style=\"color:red\">SOI</span>器件新结构","volume":"9","year":"2003"},{"abstractinfo":"<span style=\"color:red\">SOI</span>材料被誉为\"二十一世纪硅集成电路技术\"的基础. 它可消除或减轻体硅中的体效应、寄生效应及小尺寸效应等, 在超大规模集成电路、光电子等领域有广阔的应用前景. 介绍了注氧隔离、智能剥离、硅片剥离及外延层转移等几种主要的制备<span style=\"color:red\">SOI</span>材料的方法及近期相关的研究成果. 降低制造成本、提高材料质量以及获得足够薄的顶部硅层是近年来<span style=\"color:red\">SOI</span>材料制备技术改进的目标. ","authors":[{"authorName":"肖清华","id":"f33e08c7-8984-4f5b-9e1d-7315f0837e28","originalAuthorName":"肖清华"},{"authorName":"屠海令","id":"595481cd-2d91-4fe3-85cb-fa1e71d0f76b","originalAuthorName":"屠海令"},{"authorName":"周旗钢","id":"616941d3-a654-44fe-85e3-bcf18aeb7bbf","originalAuthorName":"周旗钢"},{"authorName":"王敬","id":"25336e7f-7ff3-449b-a521-dc0b84c9b904","originalAuthorName":"王敬"},{"authorName":"常青","id":"b1986c3f-0953-4d29-9764-fd30931231e6","originalAuthorName":"常青"},{"authorName":"张果虎","id":"f42e9a10-9034-4b4c-82b1-6ecfa6d8085a","originalAuthorName":"张果虎"}],"doi":"10.3969/j.issn.0258-7076.2002.06.013","fpage":"460","id":"e7c61777-b6b1-449d-8681-ddce9ee56a1b","issue":"6","journal":{"abbrevTitle":"XYJS","coverImgSrc":"journal/img/cover/XYJS.jpg","id":"67","issnPpub":"0258-7076","publisherId":"XYJS","title":"稀有金属"},"keywords":[{"id":"fc059ff6-7a06-4c4d-9875-3d63caa81447","keyword":"<span style=\"color:red\">SOI</span>","originalKeyword":"SOI"},{"id":"3f0f8426-cfc0-4581-81a4-1fa7b8aeaaae","keyword":"注氧隔离","originalKeyword":"注氧隔离"},{"id":"c1962815-02a3-4834-9a7b-e3f1f0e69cd3","keyword":"智能剥离","originalKeyword":"智能剥离"},{"id":"6bad9721-c483-468e-ba6c-696d21e2b32e","keyword":"硅片键合与减薄","originalKeyword":"硅片键合与减薄"},{"id":"5b9470dd-01a5-4f45-add0-f17381559a3e","keyword":"外延层转移","originalKeyword":"外延层转移"}],"language":"zh","publisherId":"xyjs200206013","title":"<span style=\"color:red\">SOI</span>材料的制备技术","volume":"26","year":"2002"},{"abstractinfo":"<span style=\"color:red\">SOI</span> (Silicon- on- Insulator) 光电子集成已成为十分引人注目的研究课题,其工艺与 CMOS 工艺完全兼容,可以实现低成本的 <span style=\"color:red\">SOI</span>基整片集成光电子回路.本文综述了近几年来 <span style=\"color:red\">SOI</span>集成光 电子器件的发展以及一些最新的研究进展 , 着重分析几种最新型光无源器件的工作原理和结构, 包括 <span style=\"color:red\">SOI</span>光波导、 <span style=\"color:red\">SOI</span>光波导耦合器、 <span style=\"color:red\">SOI</span>光波导开关、相位阵列波导光栅( PAWG)、基于 <span style=\"color:red\">SOI</span>的光 探测器等,并介绍了中国科学院半导体所集成光电子国家重点实验室的研究进展. ","authors":[{"authorName":"余金中","id":"acd26d68-f353-4407-b0eb-cbf33a3e1d67","originalAuthorName":"余金中"},{"authorName":"严清峰","id":"7bee5f10-c5d4-4bc4-8aa0-cf44825b5dbe","originalAuthorName":"严清峰"},{"authorName":"夏金松","id":"abc821fc-18d8-460b-bf46-b088ef48bc1d","originalAuthorName":"夏金松"},{"authorName":"王小龙","id":"4c33c559-7336-4efc-b246-a6d59def54b3","originalAuthorName":"王小龙"},{"authorName":"王启明","id":"7468be80-1027-4cc6-865d-f1e4e0dc9060","originalAuthorName":"王启明"}],"doi":"10.3969/j.issn.1007-4252.2003.01.001","fpage":"1","id":"19b514b5-eb86-4a31-b606-432df2d3a2e7","issue":"1","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"a15a54cb-9fc1-4b38-92fa-de7150619b1c","keyword":"<span style=\"color:red\">SOI</span>","originalKeyword":"SOI"},{"id":"5b9bd082-620f-4f30-8526-4280f734143a","keyword":"光电子集成电路","originalKeyword":"光电子集成电路"},{"id":"20c329fc-54d8-4b30-bcfa-dfccbe4026fa","keyword":"光波导","originalKeyword":"光波导"},{"id":"92463d82-dc24-4fe4-90f5-6a11d78c9a92","keyword":"<span style=\"color:red\">SOI</span>光波导开关","originalKeyword":"SOI光波导开关"},{"id":"1219ba96-2a0c-458f-acbd-ac787021c915","keyword":"阵列波导光栅","originalKeyword":"阵列波导光栅"},{"id":"e830229a-e1c8-4aa9-8769-ae20077142cc","keyword":"<span style=\"color:red\">SOI</span>基光探测器","originalKeyword":"SOI基光探测器"}],"language":"zh","publisherId":"gnclyqjxb200301001","title":"<span style=\"color:red\">SOI</span>光电子集成","volume":"9","year":"2003"},{"abstractinfo":"本文简单介绍了<span style=\"color:red\">SOI</span>和DSOI半导体器件制造技术,并提出了单管体硅,<span style=\"color:red\">SOI</span>及DSOI MOSFET的热阻模型.进而对体硅,<span style=\"color:red\">SOI</span> MOSFET器件,特别是DSOI MOSFET的热学特性进行数值计算,比较并分析了其数值计算结果.","authors":[{"authorName":"刘宏伟","id":"b527537c-8851-4bda-826e-e984118122f9","originalAuthorName":"刘宏伟"},{"authorName":"梁新刚","id":"c3cfefef-12f6-43bf-8fb9-d88ca51942a4","originalAuthorName":"梁新刚"}],"doi":"","fpage":"461","id":"5903eda1-b36d-475f-8a56-811d0826e49d","issue":"4","journal":{"abbrevTitle":"GCRWLXB","coverImgSrc":"journal/img/cover/GCRWLXB.jpg","id":"32","issnPpub":"0253-231X","publisherId":"GCRWLXB","title":"工程热物理学报   "},"keywords":[{"id":"c18fd9d0-4b63-4c36-96d9-5a1d15d97710","keyword":"<span style=\"color:red\">SOI</span>","originalKeyword":"SOI"},{"id":"101b49ef-a22c-4668-9225-f9ad30391be6","keyword":"DSOI","originalKeyword":"DSOI"},{"id":"257026d8-115c-47aa-85fb-37c93f466b27","keyword":"MOSFET","originalKeyword":"MOSFET"},{"id":"0f632917-b01b-4b23-b030-2a590275122a","keyword":"热阻模型","originalKeyword":"热阻模型"}],"language":"zh","publisherId":"gcrwlxb200204018","title":"单管体硅,<span style=\"color:red\">SOI</span>及DSOI MOSFET热分析","volume":"23","year":"2002"},{"abstractinfo":"用横断面透射电子显微术 (TEM) 研究了用键合方法获得的<span style=\"color:red\">SOI</span>材料的界面结构.绝缘层二氧化硅和硅膜的厚度非常均匀, Si膜/SiO2以及SiO2/Si基体的界面平直且结合紧密,在界面上没有观察到缺陷和孔洞.","authors":[{"authorName":"王敬","id":"edb6d813-ee2e-4ec9-81b9-6ca8ca08c763","originalAuthorName":"王敬"},{"authorName":"屠海令","id":"5fae135f-dba3-43c8-bd0a-0e0f8277eecd","originalAuthorName":"屠海令"},{"authorName":"刘安生","id":"593ea6c2-dc55-4413-94ca-ae96ce1943d3","originalAuthorName":"刘安生"},{"authorName":"周旗钢","id":"2dac813b-1f1e-4e13-b873-5861cbbb4a6b","originalAuthorName":"周旗钢"},{"authorName":"朱悟新","id":"941a435c-83ce-43d0-9d7e-8b89dc808f37","originalAuthorName":"朱悟新"},{"authorName":"张椿","id":"966f3fdf-01a9-4c61-9716-e82bde9b6ab6","originalAuthorName":"张椿"}],"doi":"10.3969/j.issn.0258-7076.1998.04.008","fpage":"274","id":"525fb3f0-25ca-4105-a8d3-500e5235d756","issue":"4","journal":{"abbrevTitle":"XYJS","coverImgSrc":"journal/img/cover/XYJS.jpg","id":"67","issnPpub":"0258-7076","publisherId":"XYJS","title":"稀有金属"},"keywords":[{"id":"f4ac60ef-1f04-4bfc-825a-a0a6765a9725","keyword":"硅片键合","originalKeyword":"硅片键合"},{"id":"e4d1a0c1-fcc4-4edf-bd2e-4f6a9be60335","keyword":"<span style=\"color:red\">SOI</span>","originalKeyword":"SOI"},{"id":"07bd6c5e-0b7a-4e57-9c31-bfe54cf1abfd","keyword":"界面","originalKeyword":"界面"},{"id":"409ed644-9288-4ef2-8de3-78407f170a7c","keyword":"微结构","originalKeyword":"微结构"}],"language":"zh","publisherId":"xyjs199804008","title":"<span style=\"color:red\">SOI</span>键合材料的TEM研究","volume":"22","year":"1998"},{"abstractinfo":"在<span style=\"color:red\">SOI</span>基上制备光电纳米器件具有良好的光电集成应用前景,通过铜膜生长法在 <span style=\"color:red\">SOI</span> 基上制备了形貌为类针状的 Cu(OH)2前驱体纳米线,并采用热处理法600℃条件下成功制备了 CuO 纳米线。通过扫描电镜(SEM)、透射电镜(TEM)、X 射线衍射测试(XRD)对样品结构、形貌进行了表征。 SEM、TEM测试结果表明,Cu(OH)2前驱体纳米线结构一致,尺寸均匀,表面光滑。在 Cu(OH)2前驱体纳米线上二次生长的CuO 纳米线具有类蒲草状细长光滑的结构, CuO纳米线直径约为80~100 nm,长度约为10μm, CuO 纳米线结晶性良好。","authors":[{"authorName":"常敬先","id":"b1a45762-de61-46f7-9c0c-96f91c34ad80","originalAuthorName":"常敬先"},{"authorName":"李海蓉","id":"4c7253e3-17f8-42b2-ae62-36605f14c8c2","originalAuthorName":"李海蓉"},{"authorName":"马国富","id":"e1f2a297-cd66-4c3b-95d0-91d4d0b8782c","originalAuthorName":"马国富"},{"authorName":"王鹏","id":"41086abc-c2c0-4b86-9874-f3570a1009e0","originalAuthorName":"王鹏"}],"doi":"10.3969/j.issn.1001-9731.2014.增刊(Ⅰ).037","fpage":"165","id":"ad72e8b5-95ba-4afe-86ef-68fbea0f8fca","issue":"z1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"21edbcbe-c1b2-43c3-b8ba-7d32b23b6897","keyword":"<span style=\"color:red\">SOI</span>","originalKeyword":"SOI"},{"id":"1b6bc135-0e00-4e89-a0c7-f603d9e38e6a","keyword":"铜膜生长法","originalKeyword":"铜膜生长法"},{"id":"9d7ece1c-85d3-438a-98cd-ce8af7e53613","keyword":"前驱体","originalKeyword":"前驱体"},{"id":"5706058f-3823-4af9-8e4f-375de2327531","keyword":"热处理","originalKeyword":"热处理"},{"id":"df228b6c-27f9-4c21-b281-45d5793e1a47","keyword":"CuO 纳米线","originalKeyword":"CuO 纳米线"}],"language":"zh","publisherId":"gncl2014z1037","title":"<span style=\"color:red\">SOI</span>基上制备CuO 纳米线","volume":"","year":"2014"},{"abstractinfo":"综述了绝缘层上的硅(<span style=\"color:red\">SOI</span>)材料在高压器件中的应用,分析了<span style=\"color:red\">SOI</span>高压器件的不同结构,并对现在最常用的RESURF LDMOS高压器件结构,以及不同器件参数对击穿电压的影响进行了分析和讨论.","authors":[{"authorName":"王石冶","id":"11f44365-124e-447f-9b50-eb9101383a4b","originalAuthorName":"王石冶"},{"authorName":"刘卫丽","id":"34401f6b-de8b-4119-81fa-2d2b38e1fd45","originalAuthorName":"刘卫丽"},{"authorName":"张苗","id":"476c361f-57c8-4023-bd70-84b8b32abb90","originalAuthorName":"张苗"},{"authorName":"林成鲁","id":"818c04da-0c8f-44d4-bfe8-5d4485689cf8","originalAuthorName":"林成鲁"},{"authorName":"宋志棠","id":"0414ffbc-f4b2-4c06-b134-8583670c175e","originalAuthorName":"宋志棠"}],"doi":"","fpage":"983","id":"625649f6-e184-4180-918c-d5d0794e4dbc","issue":"z1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"a243b47d-fd8a-4473-9f83-6490f618c33e","keyword":"<span style=\"color:red\">SOI</span>","originalKeyword":"SOI"},{"id":"68656a56-844e-4c05-ab44-65c49c281c88","keyword":"高压器","originalKeyword":"高压器"},{"id":"02cdfb00-aec6-4426-884a-a22f1fc86240","keyword":"击穿电压","originalKeyword":"击穿电压"}],"language":"zh","publisherId":"gncl2004z1274","title":"<span style=\"color:red\">SOI</span>在高压器件中的应用","volume":"35","year":"2004"},{"abstractinfo":"硅基集成电路不能胜任高温工作环境,其高温工作上限一般为125℃.而基于<span style=\"color:red\">SOI</span>材料及其结构的器件,能突破高温的限制.介绍了<span style=\"color:red\">SOI</span>材料结构技术用于高温电路的优势,分析了影响高温性能的自加热效应.为实现良好的高温性能,比较了几种不同的埋层结构,提出了沟道下用氮化铝作埋层的<span style=\"color:red\">SOI</span>器件新结构,并对其高温输出性能随温度的变化进行了研究分析,得出了具有指导意义的分析结果.同时提出了根据埋层材料的介电常数不同,进行等效电容折算埋层厚度的新观点,从另一层面提出了抑制自加热效应的理论依据.","authors":[{"authorName":"张新","id":"abc0dd30-c563-4460-a30f-827589cf216a","originalAuthorName":"张新"},{"authorName":"高勇","id":"2b90b85f-80a9-4034-b1f9-bc92d7ff89a5","originalAuthorName":"高勇"},{"authorName":"刘梦新","id":"7f5073bf-1b0b-4596-a023-fd64f667ecc7","originalAuthorName":"刘梦新"},{"authorName":"安涛","id":"f354b7d6-2713-473e-b703-6be7c67bd185","originalAuthorName":"安涛"},{"authorName":"王彩琳","id":"05ae33ee-3c05-4dbd-a934-34c947a67858","originalAuthorName":"王彩琳"},{"authorName":"邢昆山","id":"b3bea903-a1fe-4055-9635-21eeca95deef","originalAuthorName":"邢昆山"}],"doi":"10.3969/j.issn.1004-244X.2006.05.007","fpage":"23","id":"9a7fd9a4-7e28-4422-aeb7-584b0bf86e96","issue":"5","journal":{"abbrevTitle":"BQCLKXYGC","coverImgSrc":"journal/img/cover/BQCLKXYGC.jpg","id":"4","issnPpub":"1004-244X","publisherId":"BQCLKXYGC","title":"兵器材料科学与工程   "},"keywords":[{"id":"5efc06ff-bb69-4cc6-bf34-5daa137b0c39","keyword":"<span style=\"color:red\">SOI</span>","originalKeyword":"SOI"},{"id":"c667fbef-0d73-4712-be78-f01da57f318c","keyword":"埋层结构","originalKeyword":"埋层结构"},{"id":"88bdb4dd-7a2b-4fb8-bed1-768119458585","keyword":"自加热效应","originalKeyword":"自加热效应"},{"id":"7cc90d25-f8d7-46ea-bb16-2161b18947f9","keyword":"高温特性","originalKeyword":"高温特性"}],"language":"zh","publisherId":"bqclkxygc200605007","title":"实现高温工作的<span style=\"color:red\">SOI</span>器件埋层结构研究","volume":"29","year":"2006"},{"abstractinfo":"采用离子束增强技术(IBED)在100mm硅片上合成了AlN薄膜.以速率0.05nm/s蒸发高纯Al得到AlN样品,XPS结果证实了成功合成了AlN薄膜,其N/Al比为0.618:1,扩展电阻结果表明其绝缘性能良好,原子力显微镜(AFM)显示其表面平整光滑,均方根粗糙度(RMS)为0.13nm,满足键合需要.利用智能剥离技术(Smart-cutprocess)成功地制备了以AlN薄膜为埋层的<span style=\"color:red\">SOI</span>(silicon-on-insulator)材料.剖面透射电镜照片(XTEM)给出了此<span style=\"color:red\">SOI</span>结构,高分辨TEM实验结果表明上层硅具有与衬底硅相似的结晶质量可满足器件制造的要求.","authors":[{"authorName":"门传玲","id":"1e43274c-c000-429d-8abe-650364aea7e3","originalAuthorName":"门传玲"},{"authorName":"徐政","id":"52d327c4-0401-41c1-9e1e-6f0e1f2e87b4","originalAuthorName":"徐政"},{"authorName":"安正华","id":"31de4ef8-d3f1-4df4-9a7c-97b2c2a11e2d","originalAuthorName":"安正华"},{"authorName":"张苗","id":"17360888-d129-4a87-8ee8-268f42f0460d","originalAuthorName":"张苗"},{"authorName":"林成鲁","id":"c8b1aa7b-c79e-45e4-9d6f-1d3f0568563c","originalAuthorName":"林成鲁"}],"doi":"10.3969/j.issn.1007-4252.2002.04.001","fpage":"331","id":"14c5c87d-846c-4b19-ba88-f16ed259c1f6","issue":"4","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"62ce5d4e-d9e5-45ee-baa5-49c1d178cbd0","keyword":"AlN薄膜","originalKeyword":"AlN薄膜"},{"id":"015e069e-fcae-4f81-8e27-487a6a254322","keyword":"键合","originalKeyword":"键合"},{"id":"28949f1a-9378-43c5-8bf5-07e29e142a44","keyword":"<span style=\"color:red\">SOI</span>","originalKeyword":"SOI"},{"id":"7ddb5888-06ad-40df-a4d3-926ebd0ad965","keyword":"离子束增强沉积","originalKeyword":"离子束增强沉积"}],"language":"zh","publisherId":"gnclyqjxb200204001","title":"制备AlN薄膜为绝缘埋层的新型<span style=\"color:red\">SOI</span>材料","volume":"8","year":"2002"}],"totalpage":9,"totalrecord":89}