L. Zhou
,
X.Q. Wei
,
N.G. Zhou
金属学报(英文版)
Molecular dynamics simulations of high temperature annealing of copper bicrystals
have been carried out. The bicrystals have planar grain boundaries, and the gain
size varies in nano range. An EAM(Embedded Atom Method) potential of FS type is
used for calculating the interatomic forces. The results show that in nanocrystalline
copper, GB migration driven by inter-GB reaction can take place. A critical grain
size is identi¯ed, below which the inter-GB reaction becomes strong enough to trigger
GB motion, which accelerates rapidly and leads to annihilation of the grain bound-
aries. The critical size is found to be 16 atomic radii. A \through intermediate grain
mechanism" is identi¯ed for the nano-grain boundary motion observed, which is never
reported for GB migrations of conventional polycrystalline metals.
关键词:
grain boundary migration
,
null
,
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