S.R. Lee
,
E.S.Byon and Y.-W. Seo 1)Korea Institnte of Machinery and Materials
,
Changwon 641-010
,
Korea 2)V & P International Co.
,
Ltd
,
705-9
,
Gozandong
,
Inchon 405-310
,
Korea Manuscript received 26 August 1996)
金属学报(英文版)
Cubic boron nitride (c-BN) films were successfully grown on Si(100)substrates by a helicon wave plasma-assisted chemical vapor deposition technique.The lower limits of rf substrated bias voltage and plasma density for formation of a single phase c-BN film were 350V and 4.5×10~(10) cm~(3),respectively. The grown c-BN films demonstrated a poor adhesion to the substrates. A postannealing treatment at 800℃ C in N_2 atmosphere was found very effective in relieving the compressive stress in the films which were thereby stabilized to improve the adhesion.
关键词:
:cubic boron nitride
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