W.J. Li
,
Z.M. Wu
,
J.F. Zhao
,
Z.H. Wu
,
X.L.Zhao and B.C. Cai ( Information Storage Research Center
,
Shanghai Jiaotong University
,
Shanghai 200030
,
China
,
College of Chemical Engineering & Technology
,
Taiyuan University of Technology
,
Taiyuan 030024
,
China)
金属学报(英文版)
Titanium dioxide thin films were prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from titanium IV isopropoxide. Nitrogen was used as a carrier gas for the titanium precursor,and oxygen as a reactant gas. The deposition rates of the films have been studied as functions of ...
关键词:
MOCVD
,
null
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null
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null
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