HL. Huang
,
J.H Xing
,
G.L. Liu and G.Y Zhang(Department of Electrouic Science and Engineering
,
Liaoning University Shenyang 110036
,
China)(Department of Physics
,
Liaoning University Shenyang 110036
,
China)(Shenyang Polytechnic University Shenyan 110023
,
China)(Northeast Microelectronic Institute of Ministry of Electronic Industry Shenyang 110032
,
China)
金属学报(英文版)
The electronic structures of (CdSe)n/(ZnSe)m strained-lager soperfattice (SLS) were investigated by the recursion method in the tight-bindiop opproximation. The total,local, and partial density of states were calculated for n=1, m=5.The total density of states (TDOS) for bulk CdSe, ZnSe and n=1, 3, m=1, 3, 5, for SLS were investigated.Fermi energy, the band gap, the valence of an atom, and the ionization potential and the electron affinity were discassed.
关键词:
density of state
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