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G.Q.Wang , F.F.Jiang and X.N.Wang Basic Lessons Department , Shengyang University , Shengyang 110044 , China
金属学报(英文版)
The Ar+ injection layer into silicon can be described as inhomogeneous absorption medium wafer. The distribution of the stress, strain, strain energy in the injury layer has been studied utilizing XRD. And the average ellipsometer is used here to investigate the optical constant and degree of injury of the ion injection injury wafer.
关键词: XRD , null , null , null