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BINDING ENERGY OF SHALLOW DONOR IN In_xGa_(1-x)As/GaAsSTRAINED QUANTUM WELL

J. H. Xing(Department of Physics , Liaoning University , Shenyang 110036 , China)H.L. Huang(Department of Electronic Science and Engineering , Liaoning University , Shenyang 110036 , China)

金属学报(英文版)

The effect of the dielectric mismatch between the well and the barrier materials on the binding energies of shallow donor has been investigated in Inx Ga1-xAs/GaAsstrained quantum well. The binding energies as a function of the well widths and impurity positions in the well and the barriers are obtained by using a variational method. Calculation results show that the effect of the dielectric mismatch is quite sizable and such effect is larger for off-center impurity positions,but the effect of the lattice mismatch is small in general.

关键词: quantum well , null