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Study of Ge2Sb2Te5 Film for Nonvolatile Memory Medium

Baowei QIAO , Yunfeng LAI , Jie FENG , Yun LING , Yinyin LIN , TingAo TANG , Bingchu CAI , Bomy CHEN

材料科学技术(英文)

The amorphous Ge2Sb2Te5 film with stoichiometric compositions was deposited by co-sputtering of separate Ge, Sb, and Te targets on SiO2/Si (100) wafer in ultrahigh vacuum magnetron sputtering apparatus. The crystallization behavior of amorphous Ge2Sb2Te5 film was investigated by X-ray diffraction (X...

关键词: Co-sputtering , null , null , null , null