Haiwu ZHENG
,
Junjie ZHU
,
Zhuxi FU
,
Bixia LIN
,
Xiaoguang LI
材料科学技术(英文)
3C-SiC films have been deposited on Si (111) substrates by the low-pressure vertical chemical vapor deposition (LPVCVD) with gas mixtures of SiH4, C3H8 and H2. The growth mechanism of SiC films can be obtained through the observations using field emission scanning electron microscope (FESEM). It is found that the growth process varies from surface control to diffusion control when the deposition temperature increases from 1270 to 1350℃. The X-ray diffraction (XRD) patterns show that the SiC films have good crystallinity and strong preferred orientation. The results of the high resolution transmission electron microscopy (HRTEM) image and the transmission electron diffraction (TED) pattern indicate a peculiar superlattice structure of the film. The values of the binding energy in the high resolution X-ray photoelectron spectra (XPS) further confirm the formation of SiC.
关键词:
3C-SiC films
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,
null
Mingzai WU
,
Lianzeng YAO
,
Weili CAI
,
Guowei JIANG
,
Xiaoguang LI
,
Zhen YAO
材料科学技术(英文)
Ordered ZnO nanowire arrays embedded in anodic aluminum oxide (AAO) membranes were fabricated by electrochemical deposition of Zn(NO3)2+H3BO3 solution in a boiling bath. Scanning electron microscope (SEM) and transmission electron microscope (TEM) observation results show that the polycrystalline ZnO nanowires with diameters around 100 nm were uniformly assembled into the ordered nanochannels of the AAO. The results of the investigation into photoluminescence (PL) and electronic paramagnetic resonance (EPR) measurements reveal that the interfaces between the ZnO nanowires and the pore walls of the AAO create a lot of oxygen vacancies, which are responsible for the green light emission (peaking around 512 nm) and the huge enhancement of the PL emission.
关键词:
Nanowires
,
null
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