Z.Y. Lu 1)
,
S.M.An 2)
,
B.H.Cuo 2)
,
W.M.Li 1)
,
Y.Mei
,
Y.L.Xia 2) and J.Xu 2) 1) Department of Mechanical Engineering
,
Yangzhou University
,
Yangzhou 225009
,
China 2) Dalian University of Technology
,
Dalian 116024
,
China
金属学报(英文版)
This study raised a new assisted technique used for chemical vapor deposition (CVD) in which a laser beam irradiated the surface of substrate and simultaneously the plasma surroundings created in the reactive room, but both laser and plasma were at lower energy level in order to perform easily. The chemical vapor deposition reaction could be performed only just using simultaneously above two assisted methods. If not, the reaction could not be performed, too. It is laser plasma assisted chemical vapor deposition (LPCVD). For these reasons, a LPCVD device had been designed and manufactured, and was carried on practical operation. The results indicated that this technique is successful and feasible. Acting on the system of SiH 4 NH 3 N 2 with both CO 2 laser and RF plasma, expectant film of silicon nitride had been obtained on the surface of stainless steel.
关键词:
CVD
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