C.Y.Chen
,
W.D.Chen
,
Y.Q.Wang
金属学报(英文版)
A systematic investigation of the role of hydrogen in hydrogenated amorphous substo-ichiometric silicon oxide films (a-SiOx :H) implanted with erbium is presented. Theexperimental results show that Er3+ luminescence increases with annealing tempera-ture up to 535℃ and then drop sharply. Our work suggests that hydrogen evolutionduring annealing below 535℃ results in a reduction of defects in the films, and hencean improved Er3+ emission.
关键词:
photoluminescence
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null
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null
