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Metallorganic Vapor Phase Epitaxy of(AlGa)InP on GaAs at Atmospheric Pressure

Hongwen REN Baibiao HUANG Shuqin YU Xian'gang XU Shiwen LIU Minhua JIANG Institute of Crystal Materials , Shandong University , Jinan , 250100 , China

材料科学技术(英文)

High quality (AlGa)InP epilayers lattice matched on GaAs substrates were grown by atmospheric pressure metallorganic vapor phase epitaxy (AP-MOVPE).The relationship between surface morphologies and lattice mismatches was studied.The influence of Al incorporation to the photoluminescence and electron...

关键词: MOVPE , null , null , null , null

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