材料期刊网

Beryllium Surface Modified by B Ion Implantation

HU Renyuan YANG Yushi Institute of Low Energy Physics , Beijing Normal University , China. Beijing Research Institute of Materials and Technology , China.

材料科学技术（英文）

Beryllium is implanted with 100 keV, 2×10~(17) B/cm~2 and post-implanted sample is annealed at 650℃ for 1 h.Hardness measurement indicates that the hardness increases with implantation and can further be modified by post-implantation heat treatment. Profile measurement shows that implantation causes contamination on the surface of beryllium. During annealing boron diffuses out of beryllium and carbon on surface diffuses into beryllium. Beryllium surface is modified by composition change and carbide formation.

关键词: ion implantation , null , null