FENG Shuifu ZHO U Jicheng Shanghai Institute of Metallurgy
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Academia Sinica
,
Shanghai
,
China ZHOU Jicheng
,
Shanghai Institute of Metallurgy
,
Academia Sinica
,
Shanghai 200050
,
China
金属学报(英文版)
A modified liquid phase epitaxy apparatus for semiconductor materials was used to measure the solubility of GaAs in Bi.Two phase diagrams rich in Bi under H_2 and N_2 atmospheres were obtained according to the results of measurement.A new phenomenon,in which the parameter Q value(quantity of GaAs dissolved in Bi in fixed time/saturation quantitu,of GaAs in Bi)was different from each other at various temperatures and there existed a maxi- mum Q value at definite temperature,was observed.This phenomenon may be regarded as a common feature of a simple binary metallic system which has the phase diagram similar to that of Bi-GaAs.The difference observed from the dependence of Q values on temperature in both H_2 and N_2 atmospheres was discussed.
关键词:
solubility
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