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Optimal Control of Oxygen Concentration in a Magnetic Czochralski Crystal Growth by Response Surface Methodology

Huiping YU

材料科学技术(英文)

Concepts and techniques of response surface methodology have been widely applied in many branches of engineering, especially in the chemical and manufacturing areas. This paper presents an application of the methodology in a magnetic crystal Czochralski growth system for single crystal silicon to optimize the oxygen concentration at the crystal growth interface in a cusp magnetic field. The simulation demonstrates that the response surface methodology is a feasible algorithm for the optimization of the Czochralski crystal growth process.

关键词: Czochralski , null , null , null

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