J. Du
,
G.Y.Yang and S. Hagegege(General Research Institute for Non-ferrous Metals
,
Beijing 100088
,
China)(CECM-CNRS
,
15 rue G. Urbain
,
94407 Vitry/Seine
,
France Manuscript received 25 September 1995)
金属学报(英文版)
A model Cu-AlN composite has been prepared by ion implantation technique and annealing. The atomic configuration and lattice relationship of a low-energy inherent interface(11)Cn//(0001)AlN were studied by using transmission electron microscopy and geometrical modelling. By analysing the dichromatic pattern of the composite,a primary structural unit of the interface atomic configuration was determined for purpose of HREM image simulations and of studying the structurul relaxation state in the near-interface region.
关键词:
: Cu-AlN
,
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