J. Xu
金属学报(英文版)
Hydrogenated amorphous carbon films were fabricated by using layer-by-layer deposi-tion method and hydrogen dilution method in a small d.c.-assisted plasma enhancedchemical vapor deposition system. It was found that the hydrogen plasma treatmentcould change the sp2/sp3 ratio to some extent by chemical etching. The improvementsof field emission characteristics were observed compared with that from conventionallydeposited a-C films, which can be attributed to the large field enhancement effect dueto the inhomogeneous distribution of nanometer scale sp2 clusters and the reductionof the surface emission barrier due to the hydrogen termination.
关键词:
field emission
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J. Xu
金属学报(英文版)
Gallium Nitride film was successfully separated from sapphire substrate by laser radi-ation. The absorption of the 248nm radiation by the GaN at the interface results inrapid thermal decomposition of the interfacial layer, yielding metallic Ga and N2 gas.The substrate can be easily removed by heating above the Ga melting point (29℃).X-ray diffraction, atomic force microscopy and Photoluminescence of GaN before andafter lift-off process have been performed, which demonstrated that the separation andtransfer process do not alter the structural quality of the GaN films. And further dis-cussions on the threshold energy and crack-free strategies of laser lift-off process havealso been presented.
关键词:
GaN
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