Y. Wang
,
H.Z. Li
,
C.N. Yu
,
G.M. Wu
,
I. Gordon
,
P. Schattschneider
,
O. Van Der Biest
,
null
,
null
,
null
,
null
,
null
,
null
,
null
,
null
,
null
,
null
金属学报(英文版)
Antimony induced crystallization of PVD (physics vapor deposition) amorphous silicon can be observed on sapphire substrates. Very large crystalline regions up to several tens of micrometers can be formed. The Si diffraction patterns of the area of crystallization can be observed with TEM (transmission electron microscopy). Only a few and much smaller crystals of the order of 1μm were formed when the antimony layer was deposited by MBE (molecular beam epitaxy) compared with a layer formed by thermal evaporation. The use of high vacuum is essential in order to observe any Sb induced crystallization at all. In addition it is necessary to take measures to limit the evaporation of the antimony.
关键词:
antimony
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null
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null
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null
Y. Wang
,
J. Chen
,
H.B. Li
,
null
金属学报(英文版)
An improved interface cohesive zone model is
developed for the simulation of interface contact, under mixed-mode
loading. A new debonding initiation criterion and propagation of
debonding law, taking into account the pressure stress influence on
contact shear strength, is proposed. The model is implemented in a
finite-element program using subroutine VUINTER of ABAQUS Explicit.
An edge-notch four-point bending process and laminated vibration
damping steel sheet punch forming test are simulated with the
improved model in ABAQUS Explicit. The numerical predictions agree
satisfactorily with the corresponding experimental results.
关键词:
Cohesive zone model
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null
,
null
,
null