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OBSERVATION ON DEFECTS IN POLYCRYSTALLINE SILICON THIN FILMS

Y.F.Hu

金属学报(英文版)

Polycrystalline silicon thin films were prepared by RTCVD (rapid thermal chemical vapor deposition) method on several substrates such as SSP (silicon sheet from powder) ribbon, poly-Si wafer and mono-Si wafer, lntra-granular defects such as stacking faults, twins and microstructure defects were investigated on thin films by scan electron microscopy (SEM) technique.

关键词: poly-Si thin film , null , null

PREPARATION AND CHARACTERIZATION OF POLY-CRYSTALLINE SILICON THIN FILM

Y.F.Hu , H.Shen , Z.Y.Liu , L.S.Wen

金属学报(英文版)

Poly-crystalline sihcon thin film has big potential of reducing the cost of solar cells.In this paper the preparation of thin film is introduced, and then the morphology of poly-crystalhne thin film is discussed. On the film we developed poly-crystaUine silicon thin film solar cells with efficiency up to 6.05 165194876thout anti-reflection coating.

关键词: poly-crystalline silicon thin film , null , null

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