Gang JI
,
Ze ZHANG1
,
Yanxue CHEN
,
Shishen YAN
,
Yihua LIU
,
Liangmo MEI
金属学报(英文版)
doi:10.1016/S1006-7191(08)60083-6
[FeNi(3~nm)/Zn1- xCoxO(3~nm)]2/ZnO(d nm)/[Zn1-xCoxO(3 nm)/Co(3 nm)]2 (d=3 and 10) semiconductor junctions were prepared by magnetron sputtering system and photolithography. The spin valve effect was observed in these junctions because the utility of the ferromagnetic composite layers acted as soft and hard magnetic layers. The electrical detection was performed by measuring the magnetoresistance of these junctions to investigate the current spin polarization αsc in the ZnO layer and the spin injection efficiency η of spin-polarized electrons. αsc was reduced from 11.7% (and 10.5%) at 90 K to 7.31 % (and 5.93 %) at room temperature for d=3 (and d=10). And η was reduced from 39.5 % (and 35.5 %) at 90 K to 24.7 % (and
20.0 %) at room temperature for d=3 (and d=10).
关键词:
Spin injection
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