Dangguo LI
金属学报(英文版)
The chemical composition and semi-conductive properties of passive film on nickel-based alloy (G3 alloy) in bicarbonate/carbonate buffer solution were investigated by Auger spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), electrochemical impedance spectra (EIS) and Mott-Schottky plot. AES and XPS results showed that the passive film appeared double-layer, in which the inner film was composed of nickel oxide, the mixed nickel-chromium-molybdenum-manganese oxides were the major component of the outer film. The electrochemical results revealed that the factors including frequency, potential, time, temperature and pH value can affect the semi-conductive property, the doping densities decreased with increasing potential and pH value, prolonging time, and decreasing temperature. According to the above results, it can be concluded that the film protection on the substrate enhanced with increasing potential and pH value, prolonging time, and decreasing temperature.
关键词:
Nickel-based alloy
,
俄歇分析
,
X-射线光电子能谱
,
电化学阻抗谱
,
Mott-Schottky曲线
虞玲
,
金德玲
无机材料学报
doi:10.3321/j.issn:1000-324X.2000.05.024
降低陶瓷材料表面电荷的积累一直是俄歇分析技术能否成功应用于该?类材料必须解决的首要问题. 通过实验认为：陶瓷材料试样减薄法可以用来降低表面电荷.采用这种方法，样品可分析区域大小仅依赖于电子束斑尺?寸. 因而，用Microlab 310--F热场发射扫描俄歇微探针分析仪能在几十纳米的微区内，获取结构信息和除氢氦外的化学成分信息，突破了陶瓷材料在低电压、低电流下约几十微米的分析范围. 在此基础上，挑选了掺Dy的-Sialon ，掺Y、La的-Si3N4与以Al2O3为基体加入SiC晶须, 并通氮气氛处理的三种高性能陶瓷作为实验对象，分析和研究它们的晶粒、界面的成份、化学态和结构.?发现-Si3N4和-Sialon陶瓷中的Si(LVV, KLL)峰位都会向低能端漂移,峰位分别为: 84eV 和1613eV. Si--N--O的结合态又使Si(LVV)峰继续漂移到80eV左右. 掺Y、La的-Si3N4的玻璃相区, Si至少以两种或者两种以上的化学态存在.掺Dy的-Sialon陶瓷的局部区域内有四种组分不同的固溶相及三种组分不同?的晶间相. 另外, 在SiC与SiC-BN-C纤维补强复合陶瓷材料的断裂面，观察到?从SiC基体拔出的纤维表面的大部分是残留的C层与C-BN交界层.
关键词:
俄歇分析
,
高性能陶瓷
