NING Li-Na Zhi-Hong FENG Ying-Ming WANG Kai ZHANG Zhen FENG
材料科学技术（英文）
Two-inch semi-insulating SiC bulk crystals with resistivity higher than 1×106 Ωcm were achieved by vanadium
doping during sublimation. Secondary-ion-mass-spectrometry (SIMS) was employed to determine the concen-
tration of impurities in the crystals, such as B, Al, V and N. These results indicated that the concentration of
nitrogen and aluminum kept on decreasing and the concentration of B and V was almost constant during the
whole growth. An inner crucible was used to control the exhausting of vanadium, which made the uniformity
of the high resistivity (>1×106 Ωcm) in the wafer up to 80%. High-performance AlGaN/GaN high-electron-
mobility-transistor (HEMT) materials and devices were grown and fabricated on semi-insulating 6H-SiC sub-
strates. The two-dimensional electron gas (2DEG) mobility at room-temperature was 1795 cm2/V•s. The
charge carrier concentration of the substrate determined by capacitance-voltage (C-V) test was 7.3×1015 Ωcm−3.
The device with a gate width of 1 mm exhibits a maximum output power of 5.5 W at 8 GHz, which proves
the semi-insulating property of the substrates indirectly.
关键词:
Silicon Carbide
,
半绝缘
,
钒掺杂
,
AlGaN/GaN HEMT
严成锋
,
施尔畏
,
陈之战
,
李祥彪
,
肖兵
无机材料学报
doi:10.3321/j.issn:1000-324X.2008.03.002
选用钒掺杂浓度为0.2at%的高质量6H-SiC晶体,电阻率为7.0x108>Ω·cm,研制出超快大功率SiC光导开关.在脉冲宽度为20ns的光源激发下,分别测试了在不同的偏置电压和光能条件下开关的电脉冲输出特性.结果表明:1mm电极间隙的SiC开关器件的性能优越,耐偏压高,光导电脉冲的上升时间快(6.8ns),脉宽<20ns,稳定性好.负载为40Ω的电阻上输出线性电脉冲电压随开关的偏置电压和光强增大而增大,在2.5kV的偏置电压下,最大瞬时电流约为57.5A,瞬时功率高达132kW.
关键词:
碳化硅
,
钒掺杂
,
半绝缘
,
光导开关
赵有文
,
董志远
,
段满龙
,
孙文荣
,
杨子祥
,
吕旭如
,
王应利
人工晶体学报
doi:10.3969/j.issn.1000-985X.2004.04.015
在不同的化学配比条件下制备了半绝缘磷化铟材料,其中包括配比和富铟熔体中的铁掺杂以及磷气氛和磷化铁气氛下高温退火非掺杂晶片.在这些半绝缘磷化铟材料中检测到了与非化学配比有关的深能级缺陷.通过对大量的原生掺铁和非掺退火半绝缘磷化铟材料中的缺陷的研究,发现原生深能级缺陷与材料的电学参数质量密切相关.迁移率低、热稳定性差的掺铁半绝缘磷化铟材料中有大量的能级位于0.1～0.4eV之间的缺陷.高温退火非掺磷化铟抑制了这些缺陷的产生,获得了迁移率高、均匀性好的高质量半绝缘材料.根据这些结果,我们提出了一种通过控制化学配比制备高质量半绝缘磷化铟材料的方法.
关键词:
磷化铟
,
半绝缘
,
缺陷
