{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"利用X射线粉末衍射、场发射<span style=\"color:red\">电子</span>扫描显微术和透射<span style=\"color:red\">电子</span>显微术TEM,对不同方法制备的形态、颗粒大小不同的MdOHCO3进行钕离子的增强<span style=\"color:red\">电子</span><span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>和FT-IR<span style=\"color:red\">光谱</span>研究,发现结构形态不同的NdOHCO3由于配位环境变化,导致钕离子的<span style=\"color:red\">电子</span><span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>在2600～1600cm-1附近<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span>谱带的峰形、峰位和峰的数目产生显著变化.","authors":[{"authorName":"王家君","id":"a4ad933e-67e4-4e84-8fc8-7b92b96f27bf","originalAuthorName":"王家君"},{"authorName":"徐怡庄","id":"83072f47-63a6-45a4-b19b-7c358c7803b1","originalAuthorName":"徐怡庄"},{"authorName":"周勇","id":"708ce604-9a60-460a-a631-fabdc6d2659f","originalAuthorName":"周勇"},{"authorName":"熊柏青","id":"7d6a3e32-e3f3-44a7-ae72-e7884d795ab5","originalAuthorName":"熊柏青"},{"authorName":"康志君","id":"c27bb883-389f-4cf6-8fde-62d8d614a599","originalAuthorName":"康志君"},{"authorName":"崔舜","id":"ee253767-2d89-4a76-91f6-4a38e3820663","originalAuthorName":"崔舜"},{"authorName":"赵莹","id":"34540a25-e8dd-45c8-8ed8-0b6654af9f7c","originalAuthorName":"赵莹"},{"authorName":"周增林","id":"3243276d-b599-4157-a27b-db9d9e87ad08","originalAuthorName":"周增林"},{"authorName":"王笃金","id":"652286ca-87ea-41f9-9c24-0443be9bb69e","originalAuthorName":"王笃金"},{"authorName":"吴瑾光","id":"f0aa2517-1077-4ef9-9e62-1ed146993a05","originalAuthorName":"吴瑾光"},{"authorName":"徐端夫","id":"924cfe54-73d6-464b-92da-fd7239e606d0","originalAuthorName":"徐端夫"}],"doi":"","fpage":"734","id":"ca979831-4324-4906-aa86-34c336545e52","issue":"6","journal":{"abbrevTitle":"ZGXTXB","coverImgSrc":"journal/img/cover/ZGXTXB.jpg","id":"86","issnPpub":"1000-4343","publisherId":"ZGXTXB","title":"中国稀土学报"},"keywords":[{"id":"9a13a363-c293-4dff-bce6-a3cde27498a4","keyword":"<span style=\"color:red\">电子</span><span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>","originalKeyword":"电子拉曼光谱"},{"id":"99c0d854-bc79-40b9-9618-16f72a84e0c9","keyword":"NdOHCO3","originalKeyword":"NdOHCO3"},{"id":"7d569896-b879-4361-8a09-c166a6304e5b","keyword":"X射线衍射","originalKeyword":"X射线衍射"},{"id":"a049d24f-c8a8-471b-ba5d-d8140aac9fb5","keyword":"TEM","originalKeyword":"TEM"},{"id":"5708400e-e762-4363-844a-72162ef084a6","keyword":"稀土","originalKeyword":"稀土"}],"language":"zh","publisherId":"zgxtxb200406002","title":"不同结构形态的NdOHCO3中Nd3+的增强<span style=\"color:red\">电子</span><span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>研究","volume":"22","year":"2004"},{"abstractinfo":"利用X射线粉末衍射、透射<span style=\"color:red\">电子</span>显微术、<span style=\"color:red\">电子</span>衍射和场发射<span style=\"color:red\">电子</span>扫描显微术,对不同方法制备的形态、颗粒大小不同的纳米Nd(OH)3进行钕离子的增强<span style=\"color:red\">电子</span><span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>研究,发现晶体结构、形态不同的纳米Nd(OH)3由于配位环境变化,导致钕离子的<span style=\"color:red\">电子</span><span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>在2600～1600 cm-1附近<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span>谱带的峰形、峰位和峰的数目产生显著变化.","authors":[{"authorName":"王家君","id":"3b0576cd-5e5c-4caa-8cf9-2f6932ded71d","originalAuthorName":"王家君"},{"authorName":"朱清玮","id":"9c23bcf7-3239-463c-aea0-4e359d1682e0","originalAuthorName":"朱清玮"},{"authorName":"徐怡庄","id":"30ab6577-146c-4ddd-b3b4-3b0d9646e85e","originalAuthorName":"徐怡庄"},{"authorName":"黄亚平","id":"132f9662-0e48-40d2-a661-75f736702da9","originalAuthorName":"黄亚平"},{"authorName":"周勇","id":"cd829daf-a0a6-4567-bc4b-47c1443f0556","originalAuthorName":"周勇"},{"authorName":"熊柏青","id":"3e48fb1b-fb83-42f2-b6ba-3b5903d1b75c","originalAuthorName":"熊柏青"},{"authorName":"林晨光","id":"fe550206-05b2-401b-8a10-5d32fb74f03f","originalAuthorName":"林晨光"},{"authorName":"周风山","id":"1c9a3d9f-4c6e-4668-90ae-22a95f26b417","originalAuthorName":"周风山"}],"doi":"","fpage":"328","id":"f6a8d81c-4290-42e3-9fa0-5cd832874b59","issue":"3","journal":{"abbrevTitle":"ZGXTXB","coverImgSrc":"journal/img/cover/ZGXTXB.jpg","id":"86","issnPpub":"1000-4343","publisherId":"ZGXTXB","title":"中国稀土学报"},"keywords":[{"id":"5344222d-6c4b-4333-9c4e-96de782aa108","keyword":"<span style=\"color:red\">电子</span><span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>","originalKeyword":"电子拉曼光谱"},{"id":"dcb77011-1749-42d7-afae-775a7a2339b2","keyword":"Nd(OH)3","originalKeyword":"Nd(OH)3"},{"id":"98980adc-1e2f-4329-aedc-6a3f00be22b4","keyword":"纳米","originalKeyword":"纳米"},{"id":"f68fab31-a32a-48ef-add1-70342b38b978","keyword":"晶体","originalKeyword":"晶体"},{"id":"f096e41b-e6dd-4773-b142-a3ae3e9b10cc","keyword":"稀土","originalKeyword":"稀土"}],"language":"zh","publisherId":"zgxtxb200603014","title":"不同结构形态的纳米氢氧化钕的Nd3+增强<span style=\"color:red\">电子</span><span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>的研究","volume":"24","year":"2006"},{"abstractinfo":"利用LP-MOCVD生长了不同周期的AIGaInP/GaInP MQW样品,并测量了它们的<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>.由于样品包括了掺杂的电流扩展层和欧姆接触层以及上、下限制层,<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>中观察到了与掺杂有关的耦合<span style=\"color:red\">电子</span>(空穴)气-纵光学声子模.根据喇<span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>的选择定则,结合光致发<span style=\"color:red\">光谱</span>,发现A1P-LO/TO的相对强度比可以评定晶体AlGaInP MQW的生长质量.","authors":[{"authorName":"陈练辉","id":"f922b7d8-42d0-45b1-9c09-5d67317f2dd6","originalAuthorName":"陈练辉"},{"authorName":"范广涵","id":"e1795f3f-7226-4f97-8948-a3fc3f319bc1","originalAuthorName":"范广涵"},{"authorName":"孟耀勇","id":"0153c4ce-9ad6-4dec-b249-c0f400646796","originalAuthorName":"孟耀勇"},{"authorName":"刘桂强","id":"b8931f70-412f-4a2b-bf12-038937a10974","originalAuthorName":"刘桂强"}],"doi":"10.3969/j.issn.1007-5461.2004.06.029","fpage":"859","id":"f8c78907-376b-4947-bd11-ff735a5ccde7","issue":"6","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"e45156d8-4d4f-4ba5-a05e-90217c786cf6","keyword":"光<span style=\"color:red\">电子</span>学","originalKeyword":"光电子学"},{"id":"6c8ddf8a-a161-4a5a-a9e8-1e25e661a112","keyword":"AlGaInP/GaInP MQW","originalKeyword":"AlGaInP/GaInP MQW"},{"id":"b08b18c5-83a8-4a80-869d-d91fc85b70cd","keyword":"<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>","originalKeyword":"拉曼光谱"},{"id":"f4ba2de5-461a-4999-a1ec-a50374a9392e","keyword":"耦合<span style=\"color:red\">电子</span>(空穴)气-纵光学声子模","originalKeyword":"耦合电子(空穴)气-纵光学声子模"}],"language":"zh","publisherId":"lzdzxb200406029","title":"AlGaInP/GaInP多量子阱的<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>","volume":"21","year":"2004"},{"abstractinfo":"采用FT-IR与激光Raman<span style=\"color:red\">光谱</span>测试技术表征了硅烷接枝高密度聚乙烯(HDPE)的结构变化. 在FT-IR中的1 170、1 110、1 090和960 cm-1处出现硅烷特征峰,峰较强,在Raman<span style=\"color:red\">光谱</span>中则出现在1 091cm-1附近,而且强度较弱. 随着硅烷用量的增加,由FT-IR计算的吸光比(R1)由0.43增加到1.44,由激光Raman<span style=\"color:red\">光谱</span>计算的吸光比(R2)由0.028增加到0.099,二者变化趋势相同,均可估算硅烷的接枝率. 采用Raman<span style=\"color:red\">光谱</span>表征了硅烷接枝HDPE的结晶结构. 结果表明,随着硅烷用量的增加,晶相含量由69.8%下降到67.5%,非晶相含量由12.9%下降到5.5%,而中间相含量则由17.3%上升到27%. DSC结果表明,结晶度由71.8%下降到61.1%,熔点由134.4 ℃下降到131.1 ℃.","authors":[{"authorName":"刘庆广","id":"c85676f6-a7e3-40ca-b0a3-dbeaf9bf2ba7","originalAuthorName":"刘庆广"},{"authorName":"王利娜","id":"14c30310-2e5c-4621-a7f2-d3aa45103f75","originalAuthorName":"王利娜"},{"authorName":"徐建平","id":"1029b5ab-ef0d-4b6c-bb85-c7ed5e81106b","originalAuthorName":"徐建平"},{"authorName":"龚方红","id":"c7a192d3-c49c-4025-9af3-a6a7d6c22641","originalAuthorName":"龚方红"}],"doi":"10.3969/j.issn.1000-0518.2007.06.012","fpage":"656","id":"1b012777-f0c4-47c8-93f8-6df6fdcc1021","issue":"6","journal":{"abbrevTitle":"YYHX","coverImgSrc":"journal/img/cover/YYHX.jpg","id":"73","issnPpub":"1000-0518","publisherId":"YYHX","title":"应用化学"},"keywords":[{"id":"4189d831-3402-42ae-af9a-a516b71e7f7c","keyword":"高密度聚乙烯","originalKeyword":"高密度聚乙烯"},{"id":"1f4cc984-0d9a-4a03-bdb5-2b8bfbfcd8df","keyword":"硅烷","originalKeyword":"硅烷"},{"id":"83942e6c-4cf0-4d11-a239-b4a0263ce7ef","keyword":"接枝","originalKeyword":"接枝"},{"id":"7e487ab0-4f1e-4b24-a6b3-9af1b90f5089","keyword":"结晶","originalKeyword":"结晶"},{"id":"5a06d106-319f-479a-b299-d6a9b1282f53","keyword":"<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>","originalKeyword":"拉曼光谱"}],"language":"zh","publisherId":"yyhx200706012","title":"硅烷接枝HDPE的<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>","volume":"24","year":"2007"},{"abstractinfo":"为研究LiNbO3晶体中Zn2+浓度对<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>的影响,以及Zn2+在LiNbO3晶体中的占位和Zn:LiNbO3晶体的结构,分别在LiNbO3中掺进摩尔分数为0.02、0.04、0.06、0.08 ZnO的Zn:LiNbO3晶体,进行其A1(To)和E(To)模的<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>测试.结果表明,当掺杂ZnO的摩尔分数小于0.06时,<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>变化不大,当掺杂ZnO的摩尔分数大干8%时,晶体<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>的274 cm-1峰变得模糊,E(To)模也混入A1(To)模中,晶体峰值变化较大.","authors":[{"authorName":"郝晨生","id":"2afadd63-c3b8-4a0c-8b55-7f90b5dcba4a","originalAuthorName":"郝晨生"},{"authorName":"王锐","id":"91ca89af-558f-479b-9d54-b2f6ff760fa2","originalAuthorName":"王锐"}],"doi":"10.3969/j.issn.1005-0299.2004.02.025","fpage":"202","id":"52a95fb1-72b2-4852-b142-aa7f48a533c6","issue":"2","journal":{"abbrevTitle":"CLKXYGY","coverImgSrc":"journal/img/cover/CLKXYGY.jpg","id":"14","issnPpub":"1005-0299","publisherId":"CLKXYGY","title":"材料科学与工艺"},"keywords":[{"id":"e9152eaf-e649-4206-9a7d-fa752e0f8a2d","keyword":"Zn:LiNbO3晶体","originalKeyword":"Zn:LiNbO3晶体"},{"id":"a92ae7c4-f01b-4f41-83cc-014fa891759f","keyword":"结构","originalKeyword":"结构"},{"id":"58a58a29-c76a-437d-a137-adf637c9a4bb","keyword":"掺杂","originalKeyword":"掺杂"},{"id":"5c64c09a-6470-4cef-932e-18519e82c342","keyword":"浓度","originalKeyword":"浓度"},{"id":"02012396-5301-431e-bb18-190468234f65","keyword":"<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>","originalKeyword":"拉曼光谱"}],"language":"zh","publisherId":"clkxygy200402025","title":"掺锌铌酸锂晶体的<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>","volume":"12","year":"2004"},{"abstractinfo":"采用变温装置,在-30℃至-190℃温度范围内我们对冰行进了原位低温<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>测量.并利用<span style=\"color:red\">光谱</span>分析软件对冰的<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>带行进了分析,得到O-H键振动的三个<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span>峰随温度的变化规律.应用氢键理论对实验结果进行了分析,结果表明O-H键的v3(Eg)反对称伸缩振动和v1(B1g)不同向对称伸缩振动受氢键影响较大,并且v3(E)的<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span>峰位与温度成很好的线性关系有潜在的应用价值.","authors":[{"authorName":"欧阳顺利","id":"65d6ef1b-cdde-4a41-8721-9adc00609977","originalAuthorName":"欧阳顺利"},{"authorName":"吴楠楠","id":"2f5c5f39-ff47-43b1-87f0-212b861678ee","originalAuthorName":"吴楠楠"}],"doi":"","fpage":"39","id":"c46a7281-00e1-4488-a351-333bdf1f1e03","issue":"1","journal":{"abbrevTitle":"DWWLXB","coverImgSrc":"journal/img/cover/DWWLXB.jpg","id":"19","issnPpub":"1000-3258","publisherId":"DWWLXB","title":"低温物理学报   "},"keywords":[{"id":"0950bfe3-44fa-44ac-9c54-f41e9e062680","keyword":"<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>","originalKeyword":"拉曼光谱"},{"id":"72be1180-2be5-4a2b-9bd0-eccb2fdf3cf0","keyword":"冰","originalKeyword":"冰"},{"id":"52c1c789-3541-4845-82db-6a445c8b640b","keyword":"低温","originalKeyword":"低温"},{"id":"4c44af01-8c16-4ee6-9a67-329f59e7a21f","keyword":"氢键","originalKeyword":"氢键"}],"language":"zh","publisherId":"dwwlxb201301009","title":"低温下冰的<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>研究","volume":"35","year":"2013"},{"abstractinfo":"利用<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>结合X射线衍射分析对未掺杂和掺杂的ZnO薄膜、陶瓷薄膜进行了研究.ZnO薄膜及ZnO陶瓷薄膜均由sol-gel法制备,掺杂组份有Bi2O3、Sb2O3、MnO和Cr2O3等.结果表明,未掺杂的薄膜的ZnO主晶相均表现出显著的定向生长特征,其<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>特征谱峰为437cm-1,谱峰强度随薄膜退火温度的提高略有增强.掺杂后ZnO的<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span>谱峰发生了红移.掺Bi2O3后ZnO的<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span>谱峰由347cm-1移质移至434cm-1,掺Sb2O3后ZnO的<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span>谱峰移至435cm-1,而掺杂Bi2Os、Sb2O3、MnO和Cr2O3等组份的ZnO陶瓷薄膜的ZnO<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span>谱峰则移至434cm-1,说明掺杂元素进入了ZnO晶格,引起了晶格的变化.ZnO薄膜性能不仅受次晶相组成的影响,而且受因掺杂元素进入而引起的ZnO晶格畸变的影响.","authors":[{"authorName":"黄焱球","id":"17a70516-7913-4303-b363-3f6117ef0a57","originalAuthorName":"黄焱球"},{"authorName":"刘梅冬","id":"a4e7c4c6-1672-4d75-bdd4-8f3edb994fd9","originalAuthorName":"刘梅冬"},{"authorName":"李珍","id":"cb2c22f5-a17a-422b-bb09-794367b962b4","originalAuthorName":"李珍"},{"authorName":"曾亦可","id":"6358348f-4e09-48a8-990d-dfaa87faa775","originalAuthorName":"曾亦可"}],"doi":"","fpage":"653","id":"1037e763-3519-47bd-9a1b-c326eed9fc26","issue":"6","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"1c888c23-dda2-45c0-b53b-db35faa48608","keyword":"ZnO薄膜","originalKeyword":"ZnO薄膜"},{"id":"e907b10a-ddfd-49fb-a19e-a9442eabad4c","keyword":"晶体结构","originalKeyword":"晶体结构"},{"id":"ad5f9bc2-ef5f-4e75-8aa8-0b9db2b4d71b","keyword":"<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>","originalKeyword":"拉曼光谱"}],"language":"zh","publisherId":"gncl200206029","title":"氧化锌薄膜的<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>研究","volume":"33","year":"2002"},{"abstractinfo":"采用高温<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>法,对铌酸锂晶体高温下的结构特征进行了研究.结果显示,室温下较强的<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span>振动模式主要是由[NbO6]八面体的振动所引起的;随着温度升高,频率减小,谱峰位置向低波数方向移动,可观测到的谱峰数目减少.这主要是由晶体内模所对应的Nb-O键合强度随着温度升高而减弱引起的.","authors":[{"authorName":"仇怀利","id":"206d02ec-11f6-45ed-9c93-5a3467e469a7","originalAuthorName":"仇怀利"},{"authorName":"王爱华","id":"d110293c-784f-4c31-a7c2-0d142934a491","originalAuthorName":"王爱华"},{"authorName":"尤静林","id":"6b8f7bb9-a13a-48c3-85e0-2c77d798f5b8","originalAuthorName":"尤静林"},{"authorName":"殷绍唐","id":"754d1013-df11-4363-807d-b71b4bd7adea","originalAuthorName":"殷绍唐"}],"doi":"10.3969/j.issn.1000-985X.2004.02.011","fpage":"177","id":"e70cd0b8-5005-4a79-ae66-1ea61bb58743","issue":"2","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"2e38f2ca-0944-499a-95dd-ecd81c6e823c","keyword":"高温<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>","originalKeyword":"高温拉曼光谱"},{"id":"9611daf6-5748-42ea-a2e3-5fb73b2e56a2","keyword":"LiNbO3晶体","originalKeyword":"LiNbO3晶体"},{"id":"96c97029-7791-464e-b076-463366841be5","keyword":"结构特性","originalKeyword":"结构特性"}],"language":"zh","publisherId":"rgjtxb98200402011","title":"铌酸锂晶体高温<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>研究","volume":"33","year":"2004"},{"abstractinfo":"应用<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>研究了5 MeV Kr离子(注量分别为5×1013,2×1014,1×1015ions/cm2)室温注入6H-SiC单晶及其高温退火处理后结构的变化.研究表明,注入样品的<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>中不仅出现了Si-C振动的散射峰,还产生了同核Si-Si键和C-C键散射峰.Si-C散射峰强度随退火温度升高而增强,当退火温度高达1000℃时,已接近未辐照SiC的散射峰强度.晶体Si-Si键散射峰强度随退火温度变化不大,而非晶Si-Si键散射峰强度随退火温度的增加逐渐消失.相对<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span>强度(Relative Raman Intensity,简称RRI)随注量的增加逐渐减小并趋于饱和,且不同退火温度样品的饱和注量不相同;RRI随退火温度的增加逐渐升高,这在低注量样品中表现得尤为明显.低、中、高3种注量样品的RRI随退火温度的增加从重合逐渐分离,并且退火温度越高,分离越大.","authors":[{"authorName":"徐超亮","id":"a52e127a-77d6-4f59-b10c-1bff1474668f","originalAuthorName":"徐超亮"},{"authorName":"张崇宏","id":"91aea8c5-b537-4d52-bfa7-55c3baa4cc5c","originalAuthorName":"张崇宏"},{"authorName":"李炳生","id":"159fa790-1b4f-4cdf-825f-9dd97690d392","originalAuthorName":"李炳生"},{"authorName":"张丽卿","id":"e690e088-33d5-4f0b-9109-97edf91f7955","originalAuthorName":"张丽卿"},{"authorName":"杨义涛","id":"3d47e6f8-93b6-4000-bd2e-e17e2083c905","originalAuthorName":"杨义涛"},{"authorName":"韩录会","id":"509178ab-3ca2-4ecc-8b9b-2d149525cad1","originalAuthorName":"韩录会"},{"authorName":"贾秀军","id":"e8d4aea0-1891-4872-85e2-1ff1fe200501","originalAuthorName":"贾秀军"}],"doi":"","fpage":"209","id":"d4f9af06-6c36-4aa9-b87d-bd6129e6bffb","issue":"2","journal":{"abbrevTitle":"YZHWLPL","coverImgSrc":"journal/img/cover/YZHWLPL.jpg","id":"78","issnPpub":"1007-4627","publisherId":"YZHWLPL","title":"原子核物理评论   "},"keywords":[{"id":"09dd50ac-246c-4c55-a6e0-8ff683ec6cec","keyword":"6H-SiC","originalKeyword":"6H-SiC"},{"id":"1b342a9a-2103-4119-84c5-93e0141c6c19","keyword":"离子注入","originalKeyword":"离子注入"},{"id":"98f92ec2-bb33-48d5-b3e9-1345bedc4625","keyword":"<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>","originalKeyword":"拉曼光谱"},{"id":"1f97a4e3-7b8e-4dc1-abf0-8fb97f2231d0","keyword":"相对<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span>强度","originalKeyword":"相对拉曼强度"}],"language":"zh","publisherId":"yzhwlpl201102013","title":"Kr离子注入SiC的<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>研究","volume":"28","year":"2011"},{"abstractinfo":"用激光<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>仪探讨了成分、分相制度对NBS玻璃分相的影响,并对浸析后玻璃内部基团的变化进行了研究.结果表明:成分不同,玻璃内部占主要优势的基团不同,从而导致了分相倾向的不同.分相温度与玻璃成分有较大的联系.浸析后玻璃中的[BO4]和[BO3]均被溶出.","authors":[{"authorName":"徐建梅","id":"6790a91a-2a4d-4dde-b610-f1d8338d8fe3","originalAuthorName":"徐建梅"},{"authorName":"谭劲","id":"0561a93f-6015-4255-98bd-5167ba5e4e5f","originalAuthorName":"谭劲"},{"authorName":"周东祥","id":"95009696-e688-43e1-8a72-abdbb7e857c4","originalAuthorName":"周东祥"},{"authorName":"张德","id":"3588ebbe-f7b8-4150-9a8a-859660163a5d","originalAuthorName":"张德"}],"doi":"10.3969/j.issn.1001-1625.2003.04.020","fpage":"86","id":"593ea370-04b3-4805-93b7-44738ee06a4c","issue":"4","journal":{"abbrevTitle":"GSYTB","coverImgSrc":"journal/img/cover/GSYTB.jpg","id":"36","issnPpub":"1001-1625","publisherId":"GSYTB","title":"硅酸盐通报   "},"keywords":[{"id":"1b9bc8db-d5ac-4f53-94fa-edc8d72ec694","keyword":"NBS玻璃","originalKeyword":"NBS玻璃"},{"id":"98674098-7707-450f-aea4-5e5336ac8689","keyword":"分相","originalKeyword":"分相"},{"id":"827691ac-91fe-4e01-9277-7ab8ab4a6c36","keyword":"激光<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>","originalKeyword":"激光拉曼光谱"}],"language":"zh","publisherId":"gsytb200304020","title":"NBS系统结构的<span style=\"color:red\">拉</span><span style=\"color:red\">曼</span><span style=\"color:red\">光谱</span>研究","volume":"22","year":"2003"}],"totalpage":3465,"totalrecord":34644}