Shunhua Wu Xuesong Wei Xiaoyong Wang Hongxing Yang Shunqi Gao
材料科学技术（英文）
High performance X8R dielectric ceramics were prepared by doping Bi2O3 to BaTiO3-based ceramics. The effect of small amounts (≤1.2 mol%) of Bi2O3 additive on the microstructure and dielectric properties of BaTiO3-based ceramics have been investigated. The Bi2O3, acting as a sintering additive, can effectively lower the sintering temperature of BaTiO3-based ceramics from 1300 to 1130°C. The bulk density of BaTiO3-based ceramics increased and reached the maximum value with increasing Bi2O3 content. The dielectric constant increased with increasing Bi2O3 until it reached the maximum value with 0.8 mol% Bi2O3 additive, and the dielectric loss decreased with increasing Bi2O3 content. Optimal dielectric properties of ε=2470, tanδ=0.011 and Δε/ε25≤±9% (-55-150°C) were obtained for the BaTiO3-based ceramics doped with 0.8 mol% Bi2O3 sintered at 1130°C for 6 h.
关键词:
BaTiO3-based ceramics
,
Bi2O3
,
Dielectric properties
,
X8R
王升
,
张树人
,
周晓华
,
李波
,
陈祝
无机材料学报
doi:10.3724/SP.J.1077.2006.00369
对三元系统BaTiO3-Nb2O5-Ni2O3的微结构和介电性能进行了研究. XRD分析表明Nb2O5/Ni2O3协同掺杂的BaTiO3陶瓷为赝立方相结构; 在掺杂1.0 mol% Ni的BaTiO3 中, Nb的固溶度<4.0mol%. SEM观察表明, 随Nb掺杂量的增加, BaTiO3陶瓷的晶粒尺寸先增大后减小. BaTiO3陶瓷的室温介电常数、介质损耗, 以及在低温端和高温端的电容变化率都随Nb含量的增加而先增大后减小. DSC测量表明, Nb掺杂使BaTiO3陶瓷的居里温度向高温方向移动. 该系统瓷料介电性质的变化与材料的晶粒尺寸以及掺杂剂导致的相变温度的移动密切相关. 本实验在BaTiO3-Nb2O5-Ni2O3系统中开发出了新型的X8R材料, 这种材料很有希望用于制备大容量X8R多层陶瓷电容器.
关键词:
BaTiO3
,
X8R
,
dielectric properties
,
Curie temperature
李玲霞
,
郭锐
,
王洪茹
无机材料学报
doi:10.3724/SP.J.1077.2007.00711
研究了综合添加NiNb2O6、CaZrO3和MnCO3对细晶BaTiO3系统介电及耐压性能的影响. NiNb2O6可使BaTiO3居里峰展宽并产生双峰效应; CaZrO3改善了系统的电容变化率, 有效抑制了铁电相, 提高了耐压强度. MnCO3的加入可有效地阻止晶粒过度长大, 改善了微观结构, 降低了介质损耗, 提高了耐压强度. 当NiNb2O6、CaZrO3和MnCO3添加量为2.5mol%、1.5mol%、1.0mol%时, 本实验获得了满足X8R温度特性的低频高压MLC瓷料系统. 该瓷料可达到如下介电性能: 介电常数ε≥2600, Δ C/C 20℃≤±15% (-55～+150℃), 损耗tgδ≤0.7%, 耐压强度Eb≥15kV/mm.
关键词:
NiNb2O6
,
X8R
,
high voltage
,
CaZrO3
