{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"<span style=\"color:red\">单</span>有机材料PAR的薄膜在三明治结构中,在电场作用下有电双稳性质.利用这一性质,在STM针尖强电场作用下, PAR可形成纳米尺寸的导电的库仑岛,从而通过电流-电压特性的测量,在<span style=\"color:red\">室温</span>下观察到了库仑阻塞现象.估算了库仑岛的尺寸和所形成的双势垒隧道结构的参数,理论计算与实验结果相一致,本研究结果提供了一种新的<span style=\"color:red\">室温</span><span style=\"color:red\">单</span><span style=\"color:red\">电子</span><span style=\"color:red\">晶体管</span>的设计思路.","authors":[{"authorName":"莫晓亮","id":"ecdb933a-da9b-49f7-a80d-2b6957b7bd09","originalAuthorName":"莫晓亮"},{"authorName":"姚彦","id":"f06a78fc-4817-4575-b1ed-4a6da6124368","originalAuthorName":"姚彦"},{"authorName":"范智勇","id":"990640d1-0c53-48c3-9b09-757877eb0550","originalAuthorName":"范智勇"},{"authorName":"徐华华","id":"850d2554-4bc9-4f75-b97e-6bd9e4a04c56","originalAuthorName":"徐华华"},{"authorName":"杨剑","id":"2c8f7739-1a87-43e3-83db-de635c202907","originalAuthorName":"杨剑"},{"authorName":"陈国荣","id":"14b9b8c8-d836-48e2-abe8-8a4a9920e709","originalAuthorName":"陈国荣"}],"doi":"","fpage":"412","id":"b4665342-5bcb-4f69-9d0f-3cf8f3bfbc79","issue":"4","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"c00304b0-d0b6-43ea-a160-374963d7809c","keyword":"PAR","originalKeyword":"PAR"},{"id":"65329ed2-885f-492c-9782-8739011407c9","keyword":"STM","originalKeyword":"STM"},{"id":"fc16fa0a-b82f-4615-94a9-be5b108fcd84","keyword":"库仑阻塞","originalKeyword":"库仑阻塞"},{"id":"4b62e46d-44da-4891-9d9b-921505b5a5bd","keyword":"<span style=\"color:red\">室温</span><span style=\"color:red\">单</span><span style=\"color:red\">电子</span><span style=\"color:red\">晶体管</span>","originalKeyword":"室温单电子晶体管"}],"language":"zh","publisherId":"gncl200304020","title":"PAR薄膜中由STM诱导的库仑岛研究","volume":"34","year":"2003"},{"abstractinfo":"讨论了有机薄膜<span style=\"color:red\">晶体管</span>(Organic Thin Film Transistor,OTFT)作为开关器件来驱动<span style=\"color:red\">电子</span>纸的像素设计,特别是像素电路结构、HSPICE模拟用模型参数和像素平面结构.讨论了有机薄膜<span style=\"color:red\">晶体管</span>制造过程,并用HSPIC模拟分析了有机薄膜<span style=\"color:red\">晶体管</span>结构和存贮电容大小对像素波形的影响,结果表明TFT结构的选择依赖于存贮电容的大小.","authors":[{"authorName":"汪梅林","id":"d0156048-0170-4c13-b43c-254da44a6ecf","originalAuthorName":"汪梅林"},{"authorName":"张其国","id":"f197c5a0-bffb-433f-839a-db280a80c76c","originalAuthorName":"张其国"},{"authorName":"郑永亮","id":"ce808d0e-d348-4505-9e22-13007a629b7e","originalAuthorName":"郑永亮"},{"authorName":"秦永亮","id":"40103ff4-6235-4700-b5eb-d73482e756c1","originalAuthorName":"秦永亮"},{"authorName":"郭晓东","id":"8fcd07ce-c09f-4713-b2fa-010925cdf85b","originalAuthorName":"郭晓东"},{"authorName":"潭莉","id":"cb8913ac-c610-4ee2-b5b8-b01fd98990d5","originalAuthorName":"潭莉"},{"authorName":"朱棋锋","id":"df17240c-5575-48b6-8f7d-6e70c3b8755b","originalAuthorName":"朱棋锋"},{"authorName":"韩学斌","id":"0fd0fe7e-ec3b-47d5-9fe6-edde2ce2779b","originalAuthorName":"韩学斌"},{"authorName":"申剑锋","id":"0de86713-427e-46a5-ab71-687a5e78d9ad","originalAuthorName":"申剑锋"}],"doi":"10.3788/YJYXS20122701.0038","fpage":"38","id":"6da092c0-ac89-457f-bd85-ea8f78f3d195","issue":"1","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"eb3eff6d-cbb2-40de-85f3-ad70c6df556d","keyword":"<span style=\"color:red\">电子</span>纸","originalKeyword":"电子纸"},{"id":"fae75c2f-365f-4918-87a8-8f5b48c4d7c0","keyword":"有机薄膜<span style=\"color:red\">晶体管</span>","originalKeyword":"有机薄膜晶体管"},{"id":"2927e2ec-deaf-43f4-9d3e-ffc009c83fb8","keyword":"像素设计","originalKeyword":"像素设计"}],"language":"zh","publisherId":"yjyxs201201007","title":"有机薄膜<span style=\"color:red\">晶体管</span>阵列面向<span style=\"color:red\">电子</span>纸像素设计","volume":"27","year":"2012"},{"abstractinfo":"计算了外加太赫兹(THz)辐射下高<span style=\"color:red\">电子</span>迁移<span style=\"color:red\">晶体管</span>(HEMT)的导纳和探测响应率与入射THz辐射频率的依赖关系.结果表明,随着栅下沟道长度的增大,导纳和响应率的峰出现红移,同时高度有所下降;随着栅电压的增大,导纳和响应率的峰出现蓝移,并且高度有所上升.这些研究在太赫兹等离子探测器的设计上有着重要的作用.","authors":[{"authorName":"王立敏","id":"27569b54-ff1f-4ed3-8e7a-87d4c94848d5","originalAuthorName":"王立敏"}],"doi":"10.3969/j.issn.1007-4252.2008.04.010","fpage":"787","id":"6e387fe8-7bee-4cf1-b867-aa0078a66693","issue":"4","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"33e7b5b7-a4a1-4fe2-adc1-4777ccff7fff","keyword":"HEMT","originalKeyword":"HEMT"},{"id":"0975f493-372b-447e-b84c-57b7139077d8","keyword":"terahertz","originalKeyword":"terahertz"},{"id":"b3f826d4-c38b-4595-a290-305ae4dae228","keyword":"导纳","originalKeyword":"导纳"},{"id":"e10fa9c6-3353-4bf0-9f90-71b11e39f3f0","keyword":"响应率","originalKeyword":"响应率"}],"language":"zh","publisherId":"gnclyqjxb200804010","title":"高<span style=\"color:red\">电子</span>迁移率<span style=\"color:red\">晶体管</span>太赫兹探测器特性","volume":"14","year":"2008"},{"abstractinfo":"基于电荷控制模型,分析了极化,载流子迁移率,饱和<span style=\"color:red\">电子</span>漂移速度,导带断续,掺杂浓度,沟道温度等与自然效应的关系,并考虑了寄生电阻对自热效应的影响,建立了模拟AlGaN/GaN高<span style=\"color:red\">电子</span>迁移率<span style=\"color:red\">晶体管</span>直流Ⅰ-Ⅴ特性的解析模型.通过与试验值的对比,该模型具有较高的精度,并且计算过程简单,可以用来指导器件结构和电路的设计.","authors":[{"authorName":"姜霞","id":"ac94c0f1-f600-4b17-a96d-65fb8d69a511","originalAuthorName":"姜霞"},{"authorName":"赵正平","id":"d5ba87a2-181c-4bee-acd8-66cf884490fc","originalAuthorName":"赵正平"},{"authorName":"张志国","id":"08189717-e9de-4531-9fdf-565c9286dca2","originalAuthorName":"张志国"},{"authorName":"骆新江","id":"dd5f81d9-bc81-42dc-a022-d5f6260eff4d","originalAuthorName":"骆新江"},{"authorName":"杨瑞霞","id":"8f6965bf-c70d-4c76-901a-65d18ebdb865","originalAuthorName":"杨瑞霞"},{"authorName":"冯志红","id":"9e0abffb-1734-4be4-b631-a2a88d1e284a","originalAuthorName":"冯志红"}],"doi":"10.3969/j.issn.1007-4252.2010.04.014","fpage":"374","id":"4a229dc5-7543-42f9-84a6-3c37bd549663","issue":"4","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"ecc535cf-a78e-48df-9ef4-ba201d2f42da","keyword":"AlGaN/GaN","originalKeyword":"AlGaN/GaN"},{"id":"47c99a06-e7a9-4824-9cf3-cb00018559c5","keyword":"高<span style=\"color:red\">电子</span>迁移率<span style=\"color:red\">晶体管</span>","originalKeyword":"高电子迁移率晶体管"},{"id":"05e2ecea-c619-4558-b246-828101531cce","keyword":"解析模型","originalKeyword":"解析模型"},{"id":"6f452bcc-6f63-47c1-bee5-a511869d8268","keyword":"自热效应","originalKeyword":"自热效应"},{"id":"3bae7101-138b-4add-ace6-2fa158c29297","keyword":"直流Ⅰ-Ⅴ特性","originalKeyword":"直流Ⅰ-Ⅴ特性"}],"language":"zh","publisherId":"gnclyqjxb201004014","title":"考虑自热效应的AlGaN/GaN高<span style=\"color:red\">电子</span>迁移率<span style=\"color:red\">晶体管</span>建模与仿真","volume":"16","year":"2010"},{"abstractinfo":"ZnO是一种宽带隙的光电半导体材料,能应用于很多领域,如可用在压敏变阻器、声表面波器件、气敏元件、紫外光探测等.ZnO也可以作为有源层应用于薄膜<span style=\"color:red\">晶体管</span>(TFT)中.ZnO基薄膜<span style=\"color:red\">晶体管</span>具有以下突出优势:对于可见光部分平均具有80 %以上的透射率,迁移率可以高达36 cm2/V·s,开/关电流比大于106,可在较低温度(甚至<span style=\"color:red\">室温</span>)下制备.基于这些优点,ZnO TFT具有取代有源矩阵液晶显示器中常规a-Si TFT的趋势.同时对ZnO TFT的研究也推动了透明<span style=\"color:red\">电子</span>学的发展.本文阐述了ZnO TFT优越的电学性能,指出了其目前尚存在的不足,并对其发展前景进行了展望.","authors":[{"authorName":"程松华","id":"99846bc8-1dc2-4ec6-910c-7e7bd9620475","originalAuthorName":"程松华"},{"authorName":"曾祥斌","id":"42bde9a5-909c-48da-9f0b-e71469fb543a","originalAuthorName":"曾祥斌"}],"doi":"10.3969/j.issn.1007-2780.2006.05.023","fpage":"515","id":"4a1e8a54-7e12-45b4-8722-951cd55377c1","issue":"5","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"42a33281-d169-49c1-81eb-07319d6d546a","keyword":"ZnO TFT","originalKeyword":"ZnO TFT"},{"id":"6ee41168-f62d-4cd7-a838-10d2b6084206","keyword":"迁移率","originalKeyword":"迁移率"},{"id":"b2cba758-06a3-487b-9938-780f9a1369c1","keyword":"开/关电流比","originalKeyword":"开/关电流比"},{"id":"bc23cac6-6d25-4e8f-bc84-0e04c19c95f4","keyword":"有源矩阵液晶显示器","originalKeyword":"有源矩阵液晶显示器"},{"id":"a3a56378-48fa-4049-bf39-746e30d34596","keyword":"开口率","originalKeyword":"开口率"}],"language":"zh","publisherId":"yjyxs200605023","title":"ZnO基薄膜<span style=\"color:red\">晶体管</span>的研究","volume":"21","year":"2006"},{"abstractinfo":"利用化学气相沉积法在Si衬底上生长合成了InAs纳米线,制备了基于InAs纳米线场效应<span style=\"color:red\">晶体管</span>并研究了电输运特性.对器件的阈值电压、亚阈值斜率、跨导、场效应迁移率以及载流子浓度等参数进行了计算和讨论.结果表明,InAs纳米线器件阈值电压约为-6.0 V,亚阈值斜率为180.86 mV/decade,跨导值达0.85 μS,最大开关比达108,场效应迁移率高达436.3 cm2/(V·s),载流子浓度达6.6×1017 cm-3.","authors":[{"authorName":"郑定山","id":"9498842f-6c6a-445e-bc99-d9d4e006c486","originalAuthorName":"郑定山"},{"authorName":"邹旭明","id":"64124211-4872-414b-9a2c-fcb7319651ab","originalAuthorName":"邹旭明"},{"authorName":"蒋涛","id":"d4369d88-ad6b-4012-92cf-b4e7a52c550c","originalAuthorName":"蒋涛"}],"doi":"","fpage":"1986","id":"58fa2f9f-eee0-4787-8099-673977139348","issue":"8","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"637a092b-cf4b-4d29-b480-ddf3a2d30465","keyword":"InAs纳米线","originalKeyword":"InAs纳米线"},{"id":"0cd26fab-d5b0-4024-b655-ca60c161d5d1","keyword":"场效应<span style=\"color:red\">晶体管</span>","originalKeyword":"场效应晶体管"},{"id":"7a5db070-d5da-4830-b788-3ef13147cae4","keyword":"阈值电压","originalKeyword":"阈值电压"},{"id":"71bf75af-0a56-47e3-9664-4dad6e68250e","keyword":"迁移率","originalKeyword":"迁移率"}],"language":"zh","publisherId":"rgjtxb98201408019","title":"基于<span style=\"color:red\">单</span>根InAs纳米线场效应<span style=\"color:red\">晶体管</span>的制备及其电学性能研究","volume":"43","year":"2014"},{"abstractinfo":"本文研究了聚[(2,7-9,9-二辛基芴基)-4,7-双(噻吩-2-基)苯并-2,1,3-噻二唑](PFO-DBT)分离的半导体碳纳米<span style=\"color:red\">管</span>薄膜<span style=\"color:red\">晶体管</span>的光电性能.在超声和高速离心辅助下,PFO-DBT能够从商业化<span style=\"color:red\">单</span>壁碳纳米<span style=\"color:red\">管</span>中选择性分离出高纯的半导体碳纳米<span style=\"color:red\">管</span>.用得到的半导体碳纳米<span style=\"color:red\">管</span>溶液通过气溶胶喷墨印刷方法构建出高性能印刷薄膜<span style=\"color:red\">晶体管</span>器件.印刷碳纳米<span style=\"color:red\">管</span>薄膜<span style=\"color:red\">晶体管</span>表现出高的开关比(107)和高迁移率(15.6 cm2 ·V-1·s-1).并且所有制备的印刷薄膜<span style=\"color:red\">晶体管</span>具有很好的光敏感特性和很好的稳定性.","authors":[{"authorName":"刘振","id":"9c3db800-1b73-4af9-afe6-5666170b06fd","originalAuthorName":"刘振"},{"authorName":"徐文亚","id":"b4a831d8-7a7d-48cf-bd80-d8ff14986b76","originalAuthorName":"徐文亚"},{"authorName":"钱龙","id":"90876944-3ccf-4a71-b775-7316d879f6f6","originalAuthorName":"钱龙"},{"authorName":"赵建文","id":"13282040-3e13-4a41-bd29-9eb07f832f33","originalAuthorName":"赵建文"},{"authorName":"崔铮","id":"3fe57146-327b-43df-b8e1-fe09f7930649","originalAuthorName":"崔铮"}],"doi":"10.7517/j.issn.1674-0475.2014.03.260","fpage":"260","id":"b20230fe-2b13-4974-a9be-0440918dff6d","issue":"3","journal":{"abbrevTitle":"YXKXYGHX","coverImgSrc":"journal/img/cover/YXKXYGHX.jpg","id":"74","issnPpub":"1674-0475","publisherId":"YXKXYGHX","title":"影像科学与光化学   "},"keywords":[{"id":"83e28fb8-4d4d-43b3-9f65-fe1d4dfd0d70","keyword":"半导体性碳纳米<span style=\"color:red\">管</span>","originalKeyword":"半导体性碳纳米管"},{"id":"64f17e16-f347-4606-8cd3-c9fd734b7348","keyword":"聚合物","originalKeyword":"聚合物"},{"id":"50545aba-05ed-4125-8c4c-a5df00423666","keyword":"印刷<span style=\"color:red\">电子</span>","originalKeyword":"印刷电子"},{"id":"006150fd-a07b-465b-8bf4-935b4fc98083","keyword":"薄膜<span style=\"color:red\">晶体管</span>","originalKeyword":"薄膜晶体管"},{"id":"e7be2abc-b618-448c-9647-97276f039594","keyword":"光响应特性","originalKeyword":"光响应特性"}],"language":"zh","publisherId":"ggkxyghx201403004","title":"印刷半导体碳纳米<span style=\"color:red\">管</span>薄膜<span style=\"color:red\">晶体管</span>光电性能研究","volume":"32","year":"2014"},{"abstractinfo":"场效应<span style=\"color:red\">晶体管</span>是现代微<span style=\"color:red\">电子</span>技术的重要组成部分.为制备氧化锌薄膜<span style=\"color:red\">晶体管</span>,分析了氧化锌的p型、n型掺杂特性,对p型掺杂进行了实验分析和理论探讨,比较了各种制备氧化锌薄膜<span style=\"color:red\">晶体管</span>的工艺特点,展示了ZnO在未来<span style=\"color:red\">电子</span>和光<span style=\"color:red\">电子</span>领域的潜在应用.","authors":[{"authorName":"王秀章","id":"5b8f19c6-684a-4412-b461-7294bb9ea6d4","originalAuthorName":"王秀章"},{"authorName":"晏伯武","id":"ba85b57f-ff7e-4f5a-9dc2-9eec321b8b75","originalAuthorName":"晏伯武"},{"authorName":"郭建林","id":"12a540ae-0f6b-4af7-b84d-35854399d7d9","originalAuthorName":"郭建林"}],"doi":"","fpage":"96","id":"f02ec5b8-bce6-4df8-8b61-706ce3259a57","issue":"5","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"20d03144-1165-4e3f-95b8-bb473a20a859","keyword":"氧化锌","originalKeyword":"氧化锌"},{"id":"b274f8e1-3c7c-4342-a7aa-22d4f4ee1c5f","keyword":"薄膜","originalKeyword":"薄膜"},{"id":"ef705ebe-0571-4b0d-8e8f-674493a294b1","keyword":"p型掺杂","originalKeyword":"p型掺杂"},{"id":"c2213f5b-2f2f-4d6e-8741-bab2c093ac76","keyword":"制备","originalKeyword":"制备"}],"language":"zh","publisherId":"cldb200905024","title":"氧化锌薄膜场效应<span style=\"color:red\">晶体管</span>的制备及工艺研究","volume":"23","year":"2009"},{"abstractinfo":"提出了一种薄膜<span style=\"color:red\">晶体管</span>的新结构.这种新结构充分发挥了短沟道效应和多结效应的优点.通过器件模拟,验证了此种器件结构的物理机制.通过应用这种新结构,薄膜<span style=\"color:red\">晶体管</span>的阈值电压、伪亚阈值斜率、开关电流比和场效应迁移率都大幅改善,并且器件的热载流子和自加热可靠性也得到了极大的改善.","authors":[{"authorName":"郭海成","id":"ff436576-78ef-4779-9810-f70e757efb18","originalAuthorName":"郭海成"},{"authorName":"周玮","id":"54c4d9da-eae5-44cd-8f15-2f790205c90d","originalAuthorName":"周玮"},{"authorName":"陈荣盛","id":"369ad93f-db28-4994-8176-85cafa2d78f5","originalAuthorName":"陈荣盛"},{"authorName":"赵淑云","id":"8904681b-f7b0-493c-9fce-fcf3ccc474fc","originalAuthorName":"赵淑云"},{"authorName":"张猛","id":"17c79e7b-f219-4fa5-afe7-48730a3cedd4","originalAuthorName":"张猛"},{"authorName":"王文","id":"49a9b387-03e0-4c6e-ac20-77630fe74fe0","originalAuthorName":"王文"},{"authorName":"陈树明","id":"f558eadb-3fe4-4206-b4df-03117b3e4858","originalAuthorName":"陈树明"},{"authorName":"周南云","id":"e5fc31cd-5473-492c-9add-68ad6dfaaeda","originalAuthorName":"周南云"}],"doi":"10.3788/YJYXS20132804.0471","fpage":"471","id":"bc79cccc-0bcb-4d1a-9fe4-8b3478e43cf0","issue":"4","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"d486f4d7-1796-4e13-8bca-738edda402c8","keyword":"搭桥晶粒","originalKeyword":"搭桥晶粒"},{"id":"dc1de484-2104-4edc-a6f7-4c4eda4f1ec2","keyword":"多晶硅","originalKeyword":"多晶硅"},{"id":"33766770-451e-423b-a8cd-e07967145510","keyword":"薄膜<span style=\"color:red\">晶体管</span>","originalKeyword":"薄膜晶体管"}],"language":"zh","publisherId":"yjyxs201304001","title":"搭桥晶粒多晶硅薄膜<span style=\"color:red\">晶体管</span>","volume":"28","year":"2013"},{"abstractinfo":"制备了大尺寸 AlGaInP/GaAs SHBT和 DHBT,对其直流特性进行了测试,并分析了 AlGaInP/GaAs<span style=\"color:red\">单</span>异质结<span style=\"color:red\">晶体管</span>(SHBT)和双异质结<span style=\"color:red\">晶体管</span>(DHBT)的直流特性差异,深入研究了影响 AlGaInP/GaAs HBT开启电压(Voffset)的各个因素.结果表明: AlGaInP/GaAs HBT开启电压与外加基极电流密切相关,采用宽发射区可大大降低器件的开启电压. ","authors":[{"authorName":"李冰寒","id":"e88eca30-4c5d-43bd-a696-9a4c57cbcd22","originalAuthorName":"李冰寒"},{"authorName":"刘文超","id":"dfc8cf0b-67ce-475e-987b-1e90eb7f7fcc","originalAuthorName":"刘文超"},{"authorName":"周健","id":"42be7ef9-e956-4cda-9cb8-4a6c7decb6e4","originalAuthorName":"周健"},{"authorName":"夏冠群","id":"85a9a03a-14d3-41f0-bcaf-b136fe8f9c25","originalAuthorName":"夏冠群"}],"doi":"10.3969/j.issn.1007-4252.2003.03.019","fpage":"327","id":"7def447a-5e94-414d-817d-d19cb4001481","issue":"3","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"bdecf576-2d02-488e-9b6b-fab41576237c","keyword":"异质结双极<span style=\"color:red\">晶体管</span>","originalKeyword":"异质结双极晶体管"},{"id":"bbb49522-3f54-4b85-8f29-4065f34df599","keyword":"AlGaInP/GaAs","originalKeyword":"AlGaInP/GaAs"},{"id":"aa3aad22-a038-4d15-9ceb-d4a6cd2b3e21","keyword":"直流特性","originalKeyword":"直流特性"},{"id":"b01ca9b5-95f6-4e4d-9627-04df6ebc4ad9","keyword":"开启电压","originalKeyword":"开启电压"}],"language":"zh","publisherId":"gnclyqjxb200303019","title":"AlGaInP/GaAs异质结双极<span style=\"color:red\">晶体管</span>直流特性研究","volume":"9","year":"2003"}],"totalpage":4485,"totalrecord":44848}