{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"单有机材料PAR的薄膜在三明治结构中,在电场作用下有电双稳性质.利用这一性质,在STM针尖强电场作用下, PAR可形成纳米尺寸的导电的库仑岛,从而通过电流-电压特性的测量,在室温下观察到了库仑阻塞现象.估算了库仑岛的尺寸和所形成的双势垒隧道结构的参数,理论计算与实验结果相一致,本研究结果提供了一种新的室温单电子晶体管的设计思路.","authors":[{"authorName":"莫晓亮","id":"ecdb933a-da9b-49f7-a80d-2b6957b7bd09","originalAuthorName":"莫晓亮"},{"authorName":"姚彦","id":"f06a78fc-4817-4575-b1ed-4a6da6124368","originalAuthorName":"姚彦"},{"authorName":"范智勇","id":"990640d1-0c53-48c3-9b09-757877eb0550","originalAuthorName":"范智勇"},{"authorName":"徐华华","id":"850d2554-4bc9-4f75-b97e-6bd9e4a04c56","originalAuthorName":"徐华华"},{"authorName":"杨剑","id":"2c8f7739-1a87-43e3-83db-de635c202907","originalAuthorName":"杨剑"},{"authorName":"陈国荣","id":"14b9b8c8-d836-48e2-abe8-8a4a9920e709","originalAuthorName":"陈国荣"}],"doi":"","fpage":"412","id":"b4665342-5bcb-4f69-9d0f-3cf8f3bfbc79","issue":"4","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"c00304b0-d0b6-43ea-a160-374963d7809c","keyword":"PAR","originalKeyword":"PAR"},{"id":"65329ed2-885f-492c-9782-8739011407c9","keyword":"STM","originalKeyword":"STM"},{"id":"fc16fa0a-b82f-4615-94a9-be5b108fcd84","keyword":"库仑阻塞","originalKeyword":"库仑阻塞"},{"id":"4b62e46d-44da-4891-9d9b-921505b5a5bd","keyword":"室温单电子晶体管","originalKeyword":"室温单电子晶体管"}],"language":"zh","publisherId":"gncl200304020","title":"PAR薄膜中由STM诱导的库仑岛研究","volume":"34","year":"2003"},{"abstractinfo":"讨论了有机薄膜晶体管(Organic Thin Film Transistor,OTFT)作为开关器件来驱动电子纸的像素设计,特别是像素电路结构、HSPICE模拟用模型参数和像素平面结构.讨论了有机薄膜晶体管制造过程,并用HSPIC模拟分析了有机薄膜晶体管结构和存贮电容大小对像素波形的影响,结果表明TFT结构的选择依赖于存贮电容的大小.","authors":[{"authorName":"汪梅林","id":"d0156048-0170-4c13-b43c-254da44a6ecf","originalAuthorName":"汪梅林"},{"authorName":"张其国","id":"f197c5a0-bffb-433f-839a-db280a80c76c","originalAuthorName":"张其国"},{"authorName":"郑永亮","id":"ce808d0e-d348-4505-9e22-13007a629b7e","originalAuthorName":"郑永亮"},{"authorName":"秦永亮","id":"40103ff4-6235-4700-b5eb-d73482e756c1","originalAuthorName":"秦永亮"},{"authorName":"郭晓东","id":"8fcd07ce-c09f-4713-b2fa-010925cdf85b","originalAuthorName":"郭晓东"},{"authorName":"潭莉","id":"cb8913ac-c610-4ee2-b5b8-b01fd98990d5","originalAuthorName":"潭莉"},{"authorName":"朱棋锋","id":"df17240c-5575-48b6-8f7d-6e70c3b8755b","originalAuthorName":"朱棋锋"},{"authorName":"韩学斌","id":"0fd0fe7e-ec3b-47d5-9fe6-edde2ce2779b","originalAuthorName":"韩学斌"},{"authorName":"申剑锋","id":"0de86713-427e-46a5-ab71-687a5e78d9ad","originalAuthorName":"申剑锋"}],"doi":"10.3788/YJYXS20122701.0038","fpage":"38","id":"6da092c0-ac89-457f-bd85-ea8f78f3d195","issue":"1","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示 "},"keywords":[{"id":"eb3eff6d-cbb2-40de-85f3-ad70c6df556d","keyword":"电子纸","originalKeyword":"电子纸"},{"id":"fae75c2f-365f-4918-87a8-8f5b48c4d7c0","keyword":"有机薄膜晶体管","originalKeyword":"有机薄膜晶体管"},{"id":"2927e2ec-deaf-43f4-9d3e-ffc009c83fb8","keyword":"像素设计","originalKeyword":"像素设计"}],"language":"zh","publisherId":"yjyxs201201007","title":"有机薄膜晶体管阵列面向电子纸像素设计","volume":"27","year":"2012"},{"abstractinfo":"计算了外加太赫兹(THz)辐射下高电子迁移晶体管(HEMT)的导纳和探测响应率与入射THz辐射频率的依赖关系.结果表明,随着栅下沟道长度的增大,导纳和响应率的峰出现红移,同时高度有所下降;随着栅电压的增大,导纳和响应率的峰出现蓝移,并且高度有所上升.这些研究在太赫兹等离子探测器的设计上有着重要的作用.","authors":[{"authorName":"王立敏","id":"27569b54-ff1f-4ed3-8e7a-87d4c94848d5","originalAuthorName":"王立敏"}],"doi":"10.3969/j.issn.1007-4252.2008.04.010","fpage":"787","id":"6e387fe8-7bee-4cf1-b867-aa0078a66693","issue":"4","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报 "},"keywords":[{"id":"33e7b5b7-a4a1-4fe2-adc1-4777ccff7fff","keyword":"HEMT","originalKeyword":"HEMT"},{"id":"0975f493-372b-447e-b84c-57b7139077d8","keyword":"terahertz","originalKeyword":"terahertz"},{"id":"b3f826d4-c38b-4595-a290-305ae4dae228","keyword":"导纳","originalKeyword":"导纳"},{"id":"e10fa9c6-3353-4bf0-9f90-71b11e39f3f0","keyword":"响应率","originalKeyword":"响应率"}],"language":"zh","publisherId":"gnclyqjxb200804010","title":"高电子迁移率晶体管太赫兹探测器特性","volume":"14","year":"2008"},{"abstractinfo":"基于电荷控制模型,分析了极化,载流子迁移率,饱和电子漂移速度,导带断续,掺杂浓度,沟道温度等与自然效应的关系,并考虑了寄生电阻对自热效应的影响,建立了模拟AlGaN/GaN高电子迁移率晶体管直流Ⅰ-Ⅴ特性的解析模型.通过与试验值的对比,该模型具有较高的精度,并且计算过程简单,可以用来指导器件结构和电路的设计.","authors":[{"authorName":"姜霞","id":"ac94c0f1-f600-4b17-a96d-65fb8d69a511","originalAuthorName":"姜霞"},{"authorName":"赵正平","id":"d5ba87a2-181c-4bee-acd8-66cf884490fc","originalAuthorName":"赵正平"},{"authorName":"张志国","id":"08189717-e9de-4531-9fdf-565c9286dca2","originalAuthorName":"张志国"},{"authorName":"骆新江","id":"dd5f81d9-bc81-42dc-a022-d5f6260eff4d","originalAuthorName":"骆新江"},{"authorName":"杨瑞霞","id":"8f6965bf-c70d-4c76-901a-65d18ebdb865","originalAuthorName":"杨瑞霞"},{"authorName":"冯志红","id":"9e0abffb-1734-4be4-b631-a2a88d1e284a","originalAuthorName":"冯志红"}],"doi":"10.3969/j.issn.1007-4252.2010.04.014","fpage":"374","id":"4a229dc5-7543-42f9-84a6-3c37bd549663","issue":"4","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报 "},"keywords":[{"id":"ecc535cf-a78e-48df-9ef4-ba201d2f42da","keyword":"AlGaN/GaN","originalKeyword":"AlGaN/GaN"},{"id":"47c99a06-e7a9-4824-9cf3-cb00018559c5","keyword":"高电子迁移率晶体管","originalKeyword":"高电子迁移率晶体管"},{"id":"05e2ecea-c619-4558-b246-828101531cce","keyword":"解析模型","originalKeyword":"解析模型"},{"id":"6f452bcc-6f63-47c1-bee5-a511869d8268","keyword":"自热效应","originalKeyword":"自热效应"},{"id":"3bae7101-138b-4add-ace6-2fa158c29297","keyword":"直流Ⅰ-Ⅴ特性","originalKeyword":"直流Ⅰ-Ⅴ特性"}],"language":"zh","publisherId":"gnclyqjxb201004014","title":"考虑自热效应的AlGaN/GaN高电子迁移率晶体管建模与仿真","volume":"16","year":"2010"},{"abstractinfo":"ZnO是一种宽带隙的光电半导体材料,能应用于很多领域,如可用在压敏变阻器、声表面波器件、气敏元件、紫外光探测等.ZnO也可以作为有源层应用于薄膜晶体管(TFT)中.ZnO基薄膜晶体管具有以下突出优势:对于可见光部分平均具有80 %以上的透射率,迁移率可以高达36 cm2/V·s,开/关电流比大于106,可在较低温度(甚至室温)下制备.基于这些优点,ZnO TFT具有取代有源矩阵液晶显示器中常规a-Si TFT的趋势.同时对ZnO TFT的研究也推动了透明电子学的发展.本文阐述了ZnO TFT优越的电学性能,指出了其目前尚存在的不足,并对其发展前景进行了展望.","authors":[{"authorName":"程松华","id":"99846bc8-1dc2-4ec6-910c-7e7bd9620475","originalAuthorName":"程松华"},{"authorName":"曾祥斌","id":"42bde9a5-909c-48da-9f0b-e71469fb543a","originalAuthorName":"曾祥斌"}],"doi":"10.3969/j.issn.1007-2780.2006.05.023","fpage":"515","id":"4a1e8a54-7e12-45b4-8722-951cd55377c1","issue":"5","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示 "},"keywords":[{"id":"42a33281-d169-49c1-81eb-07319d6d546a","keyword":"ZnO TFT","originalKeyword":"ZnO TFT"},{"id":"6ee41168-f62d-4cd7-a838-10d2b6084206","keyword":"迁移率","originalKeyword":"迁移率"},{"id":"b2cba758-06a3-487b-9938-780f9a1369c1","keyword":"开/关电流比","originalKeyword":"开/关电流比"},{"id":"bc23cac6-6d25-4e8f-bc84-0e04c19c95f4","keyword":"有源矩阵液晶显示器","originalKeyword":"有源矩阵液晶显示器"},{"id":"a3a56378-48fa-4049-bf39-746e30d34596","keyword":"开口率","originalKeyword":"开口率"}],"language":"zh","publisherId":"yjyxs200605023","title":"ZnO基薄膜晶体管的研究","volume":"21","year":"2006"},{"abstractinfo":"利用化学气相沉积法在Si衬底上生长合成了InAs纳米线,制备了基于InAs纳米线场效应晶体管并研究了电输运特性.对器件的阈值电压、亚阈值斜率、跨导、场效应迁移率以及载流子浓度等参数进行了计算和讨论.结果表明,InAs纳米线器件阈值电压约为-6.0 V,亚阈值斜率为180.86 mV/decade,跨导值达0.85 μS,最大开关比达108,场效应迁移率高达436.3 cm2/(V·s),载流子浓度达6.6×1017 cm-3.","authors":[{"authorName":"郑定山","id":"9498842f-6c6a-445e-bc99-d9d4e006c486","originalAuthorName":"郑定山"},{"authorName":"邹旭明","id":"64124211-4872-414b-9a2c-fcb7319651ab","originalAuthorName":"邹旭明"},{"authorName":"蒋涛","id":"d4369d88-ad6b-4012-92cf-b4e7a52c550c","originalAuthorName":"蒋涛"}],"doi":"","fpage":"1986","id":"58fa2f9f-eee0-4787-8099-673977139348","issue":"8","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"637a092b-cf4b-4d29-b480-ddf3a2d30465","keyword":"InAs纳米线","originalKeyword":"InAs纳米线"},{"id":"0cd26fab-d5b0-4024-b655-ca60c161d5d1","keyword":"场效应晶体管","originalKeyword":"场效应晶体管"},{"id":"7a5db070-d5da-4830-b788-3ef13147cae4","keyword":"阈值电压","originalKeyword":"阈值电压"},{"id":"71bf75af-0a56-47e3-9664-4dad6e68250e","keyword":"迁移率","originalKeyword":"迁移率"}],"language":"zh","publisherId":"rgjtxb98201408019","title":"基于单根InAs纳米线场效应晶体管的制备及其电学性能研究","volume":"43","year":"2014"},{"abstractinfo":"本文研究了聚[(2,7-9,9-二辛基芴基)-4,7-双(噻吩-2-基)苯并-2,1,3-噻二唑](PFO-DBT)分离的半导体碳纳米管薄膜晶体管的光电性能.在超声和高速离心辅助下,PFO-DBT能够从商业化单壁碳纳米管中选择性分离出高纯的半导体碳纳米管.用得到的半导体碳纳米管溶液通过气溶胶喷墨印刷方法构建出高性能印刷薄膜晶体管器件.印刷碳纳米管薄膜晶体管表现出高的开关比(107)和高迁移率(15.6 cm2 ·V-1·s-1).并且所有制备的印刷薄膜晶体管具有很好的光敏感特性和很好的稳定性.","authors":[{"authorName":"刘振","id":"9c3db800-1b73-4af9-afe6-5666170b06fd","originalAuthorName":"刘振"},{"authorName":"徐文亚","id":"b4a831d8-7a7d-48cf-bd80-d8ff14986b76","originalAuthorName":"徐文亚"},{"authorName":"钱龙","id":"90876944-3ccf-4a71-b775-7316d879f6f6","originalAuthorName":"钱龙"},{"authorName":"赵建文","id":"13282040-3e13-4a41-bd29-9eb07f832f33","originalAuthorName":"赵建文"},{"authorName":"崔铮","id":"3fe57146-327b-43df-b8e1-fe09f7930649","originalAuthorName":"崔铮"}],"doi":"10.7517/j.issn.1674-0475.2014.03.260","fpage":"260","id":"b20230fe-2b13-4974-a9be-0440918dff6d","issue":"3","journal":{"abbrevTitle":"YXKXYGHX","coverImgSrc":"journal/img/cover/YXKXYGHX.jpg","id":"74","issnPpub":"1674-0475","publisherId":"YXKXYGHX","title":"影像科学与光化学 "},"keywords":[{"id":"83e28fb8-4d4d-43b3-9f65-fe1d4dfd0d70","keyword":"半导体性碳纳米管","originalKeyword":"半导体性碳纳米管"},{"id":"64f17e16-f347-4606-8cd3-c9fd734b7348","keyword":"聚合物","originalKeyword":"聚合物"},{"id":"50545aba-05ed-4125-8c4c-a5df00423666","keyword":"印刷电子","originalKeyword":"印刷电子"},{"id":"006150fd-a07b-465b-8bf4-935b4fc98083","keyword":"薄膜晶体管","originalKeyword":"薄膜晶体管"},{"id":"e7be2abc-b618-448c-9647-97276f039594","keyword":"光响应特性","originalKeyword":"光响应特性"}],"language":"zh","publisherId":"ggkxyghx201403004","title":"印刷半导体碳纳米管薄膜晶体管光电性能研究","volume":"32","year":"2014"},{"abstractinfo":"场效应晶体管是现代微电子技术的重要组成部分.为制备氧化锌薄膜晶体管,分析了氧化锌的p型、n型掺杂特性,对p型掺杂进行了实验分析和理论探讨,比较了各种制备氧化锌薄膜晶体管的工艺特点,展示了ZnO在未来电子和光电子领域的潜在应用.","authors":[{"authorName":"王秀章","id":"5b8f19c6-684a-4412-b461-7294bb9ea6d4","originalAuthorName":"王秀章"},{"authorName":"晏伯武","id":"ba85b57f-ff7e-4f5a-9dc2-9eec321b8b75","originalAuthorName":"晏伯武"},{"authorName":"郭建林","id":"12a540ae-0f6b-4af7-b84d-35854399d7d9","originalAuthorName":"郭建林"}],"doi":"","fpage":"96","id":"f02ec5b8-bce6-4df8-8b61-706ce3259a57","issue":"5","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"20d03144-1165-4e3f-95b8-bb473a20a859","keyword":"氧化锌","originalKeyword":"氧化锌"},{"id":"b274f8e1-3c7c-4342-a7aa-22d4f4ee1c5f","keyword":"薄膜","originalKeyword":"薄膜"},{"id":"ef705ebe-0571-4b0d-8e8f-674493a294b1","keyword":"p型掺杂","originalKeyword":"p型掺杂"},{"id":"c2213f5b-2f2f-4d6e-8741-bab2c093ac76","keyword":"制备","originalKeyword":"制备"}],"language":"zh","publisherId":"cldb200905024","title":"氧化锌薄膜场效应晶体管的制备及工艺研究","volume":"23","year":"2009"},{"abstractinfo":"提出了一种薄膜晶体管的新结构.这种新结构充分发挥了短沟道效应和多结效应的优点.通过器件模拟,验证了此种器件结构的物理机制.通过应用这种新结构,薄膜晶体管的阈值电压、伪亚阈值斜率、开关电流比和场效应迁移率都大幅改善,并且器件的热载流子和自加热可靠性也得到了极大的改善.","authors":[{"authorName":"郭海成","id":"ff436576-78ef-4779-9810-f70e757efb18","originalAuthorName":"郭海成"},{"authorName":"周玮","id":"54c4d9da-eae5-44cd-8f15-2f790205c90d","originalAuthorName":"周玮"},{"authorName":"陈荣盛","id":"369ad93f-db28-4994-8176-85cafa2d78f5","originalAuthorName":"陈荣盛"},{"authorName":"赵淑云","id":"8904681b-f7b0-493c-9fce-fcf3ccc474fc","originalAuthorName":"赵淑云"},{"authorName":"张猛","id":"17c79e7b-f219-4fa5-afe7-48730a3cedd4","originalAuthorName":"张猛"},{"authorName":"王文","id":"49a9b387-03e0-4c6e-ac20-77630fe74fe0","originalAuthorName":"王文"},{"authorName":"陈树明","id":"f558eadb-3fe4-4206-b4df-03117b3e4858","originalAuthorName":"陈树明"},{"authorName":"周南云","id":"e5fc31cd-5473-492c-9add-68ad6dfaaeda","originalAuthorName":"周南云"}],"doi":"10.3788/YJYXS20132804.0471","fpage":"471","id":"bc79cccc-0bcb-4d1a-9fe4-8b3478e43cf0","issue":"4","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示 "},"keywords":[{"id":"d486f4d7-1796-4e13-8bca-738edda402c8","keyword":"搭桥晶粒","originalKeyword":"搭桥晶粒"},{"id":"dc1de484-2104-4edc-a6f7-4c4eda4f1ec2","keyword":"多晶硅","originalKeyword":"多晶硅"},{"id":"33766770-451e-423b-a8cd-e07967145510","keyword":"薄膜晶体管","originalKeyword":"薄膜晶体管"}],"language":"zh","publisherId":"yjyxs201304001","title":"搭桥晶粒多晶硅薄膜晶体管","volume":"28","year":"2013"},{"abstractinfo":"制备了大尺寸 AlGaInP/GaAs SHBT和 DHBT,对其直流特性进行了测试,并分析了 AlGaInP/GaAs单异质结晶体管(SHBT)和双异质结晶体管(DHBT)的直流特性差异,深入研究了影响 AlGaInP/GaAs HBT开启电压(Voffset)的各个因素.结果表明: AlGaInP/GaAs HBT开启电压与外加基极电流密切相关,采用宽发射区可大大降低器件的开启电压. 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