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One-Dimensional (1-D) Nanoscale Heterostructures

Guozhen SHEN , Di CHEN

材料科学技术(英文)

One-dimensional (1-D) nanostructures have been attracted much attention as a result of their exceptional properties, which are different from bulk materials. Among 1-D nanostructures, 1-D heterostructures with modulated compositions and interfaces have recently become of particular interest with respect to potential applications in nanoscale building blocks of future optoelectronic devices and systems. Many kinds of methods have been developed for the synthesis of 1-D nanoscale heterostructures. This article reviews the most recent development, with an emphasize on our own recent efforts, on 1-D nanoscale heterostructures, especially those synthesized from the vapor deposition methods, in which all the reactive precursors are mixed together in the reaction chamber. Three types of 1-D nanoscale heterostructures, defined from their morphologies characteristics, are discussed in detail, which include 1-D co-axial core-shell heterostructures, 1-D segmented heterostructures and hierarchical heterostructures. This article begins with a brief survey of various methods that have been developed for synthesizing 1-D nanoscale heterostructures and then mainly focuses on the synthesis, structures and properties of the above three types of nanoscale heterostructures. Finally, this review concludes with personal views towards the topic of 1-D nanoscale heterostructures.

关键词: Nanostructures , Heterostructures , One-dime

One-dimensional ZnS-based Hetero-, Core/shell and Hierarchical Nanostructures

Xiaosheng FANG , Ujjal K.Gautamy

材料科学技术(英文)

A focus of the current nanotechnology has shifted from routine fabrication of nanostructures to designing functional electronic devices and realizing their immense potentials for applications. Due to infusion of multifunctionality into a single system, the utilization of hetero-, core/shell and hierarchical nanostructures has become the key issue for building such devices. ZnS, due to its direct wide bandgap, high index of refraction, high transparency in the visible range and intrinsic polarity, is one of the most useful semiconductors for a wide range of electronics applications. This article provides a dense review of the state-of-the-art research activities in one-dimensional (1D) ZnS-based hetero-, core/shell and hierarchical nanostructures. The particular emphasis is put on their syntheses and applications.

关键词: Heterostructures , Core/shell , Hierarchica

在Cu-Ni合金上直接生长石墨烯/氮化硼异质结构

田博 , 薛宸

功能材料与器件学报

利用碳原子在铜镍合金中有限的溶解度,采用两步化学沉积法(Two-Regime CVD),实现直接以铜镍合金为衬底生长石墨烯/氮化硼纵向异质结.为了表征石墨烯/氮化硼异质结构的存在以及晶格质量,我们采用了共聚焦拉曼光谱仪对转移到二氧化硅衬底上的样品进行探测,并进一步利用扫描电子显微镜对样品的表面形貌进行表征.最后还提出探究该异质结构对石墨烯电学和热传导性质的影响.

关键词: 石墨烯 , 氮化硼 , CVD , 异质结构

调制掺杂AlxGa1-xN/GaN异质结磁输运研究

郑泽伟 , 沈波 , 张荣 , 桂永胜 , 蒋春萍 , 马智训 , 郑国珍 , 郭少令 , 施毅 , 韩平 , 郑有炓

功能材料与器件学报 doi:10.3969/j.issn.1007-4252.2000.04.021

通过低温和高磁场下的磁输运测量,首次在Al0.22Ga0.78N/GaN异质结中观察到了舒勃尼科夫-德哈斯振荡的双周期特性,发现在Al0.22Ga0.78N/GaN异质结的三角势阱中产生了二维电子气(2DEG)的第二子带占据,发生第二子带占据的阈值2DEG浓度估算为7.2×1012 cm-2,在阈值2DEG浓度下第一子带和第二子带能级的距离计算为75 meV.

关键词: 异质结 , 舒勃尼科夫-德哈斯振荡 , 第二子带占据

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