吉吾尔·吉里力
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拜山·沙德克
功能材料
主要研究了不同保护层Ta和Ru对磁性薄膜NiFe的厚度及磁性的影响.通过观察可以看出,NiFe/Ta,NiFe/Ru界面间产生了磁矩为零的部分层即所谓的"死层",其厚度分别为(1.5±0.2)nm,(1.2±0.2)nm(厚度误差在0.2nm范围内).利用两种保护层时虽然避免不了"死层"现象的出现,但是发现,Ru作为保护层时产生的"死层"厚度比Ta作为保护层时的小.为了进一步证实这一点,我们采用X射线衍射仪及X射线光电子能谱仪对该两种薄膜进行了结构测试和深度剖析,并且运用XPSPeak 4.1拟合软件对获得的Ta4f和Ru3d的高分辨XPS谱进行了计算机拟合分析;结果表明,Ru较Ta更加适合于做保护层,渴望在自旋电子器件上得到应用.
关键词:
保护层Ru
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磁性薄膜
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MRAM
X.F.Han
材料科学技术（英文）
Nano-ring-type magnetic tunnel junctions (NR-MTJs) with the layer structure of Ta(5)/Ir22Mn78(10)/Co75Fe25(2)/Ru(0.75)/Co60Fe20B20(3)/Al(0.6)-oxide/Co60Fe20B20(2.5)/Ta(3)/Ru(5) (thickness unit: nm) were nano-fabricated on the Si(100)/SiO2 substrate using magnetron sputtering deposition combined with the optical lithography, electron beam lithography (EBL) and Ar ion-beam etching techniques. The smaller NR-MTJs with the inner- and outer-diameter of around 50 and 100 nm and also their corresponding NR-MTJ arrays were nano-patterned. The tunneling magnetoresistance (TMR & R) versus driving current (I) loops for a spin-polarized current switching were measured, and the TMR ratio of around 35% at room temperature were observed. The critical values of switching current for the free Co60Fe20B20 layer relative to the reference Co60Fe20B20 layer between parallel and anti-parallel magnetization states were between 0.50 and 0.75 mA in such NR-MTJs. It is suggested that the applicable MRAM fabrication with the density and capacity higher than 256 Mbit/inch2 even 6 Gbite/inch2 are possible using both 1 NR-MTJ+1 transistor structure and current switching mechanism based on based on our fabricated 4×4 MRAM demo devices.
关键词:
Nano-ring-type magnetic tunnel junctions
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Feifei LI
,
Xiufeng HAN
,
Lixian JIANG
材料科学技术（英文）
Single barrier magnetic-tunnel-junctions (MTJs) with the layer structure of Ta(5)/Cu(30)/Ta(5)/Ni79Fe21(5)/Ir22Mn78(12)/Co60Fe20B20(4)/Al(0.8)-oxide/Co60Fe20B20(4)/Cu(30)/Ta(5) [thickness unit: nm] using the amorphous Co60Fe20B20 alloy as free and pinned layers were micro-fabricated. The experimental investigations showed that the tunnel magnetoresistance (TMR) ratio and the resistance decrease with increasing dc bias voltage from 0 to 500~mV or with increasing temperature from 4.2 K to RT. A high TMR ratio of 86.2% at 4.2 K, which corresponds to the high spin polarization of Co60Fe20B20 55%, was observed in the MTJs after annealing at 270℃ for 1 h. High TMR ratio of 53.1%, low junction resistance-area product RS of 3.56 kΩμm2, small coercivity Hc of ≤4 Oe, and relatively large bias-voltage-at-half-maximum TMR with the value V1/2 of greater than 570 mV at RT have been achieved in such Co-Fe-B MTJs.
关键词:
Tunnel magnetoresistance
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