李明华
,
于广华
,
朱逢吾
,
姜宏伟
,
赖武彦
功能材料
采用磁控溅射方法制备NiFe/FeMn双层膜(分别以Ta、Cu作为缓冲层,Ta作为保护层).实验发现,以Ta为缓冲层的NiFe/FeMn双层膜的交换偏置场比以Cu为缓冲层的NiFe/FeMn双层膜的交换偏置场大,而矫顽力却很小.我们从织构、界面粗糙度两方面对其中的原因进行了分析.以Ta为缓冲层的NiFe/FeMn双层膜有好的织构且NiFe/FeMn界面较平滑,这引起了较强的交换偏置场和较低的矫顽力.
关键词:
NiFe/FeMn
,
交换偏置场
,
织构
,
界面粗糙度
李明华
,
于广华
,
朱逢吾
,
曾德长
,
赖武彦
功能材料
在Ta/Cu/NiFe/FeMn/Ta薄膜中,我们曾发现Cu在NiFe层的表面偏聚导致NiFe/FeMn薄膜的交换偏置场降低.为了抑制Cu的表面偏聚,我们在Ta/Cu/NiFe/FeMn/Ta薄膜中在Cu/NiFe界面沉积Bi插层.实验发现,沉积适当厚度的Bi插层可以将NiFe/FeMn双层膜的交换偏置场提高1倍.XPS分析表明,在Cu/NiFe界面沉积的插层Bi有效地抑制了Cu在NiFe表面的偏聚,提高了交换偏置场.
关键词:
NiFe/FeMn
,
交换偏置场Hex
,
表面偏聚
,
Bi插层
M.H. Li
,
G.H. Yu
,
F.W. Zhu
金属学报(英文版)
The exchange bias field of NiFe/FeMn films with Ta/ Cu buffer was proved to be lowerthan that of the films with Ta buffer. The crystallographic texture, surface roughnessand elements distribution were examined in these two sets of samples, and there isno apparent difference for the texture and roughness. However, the segregation ofCu atoms above NiFe surface in the maltilayer of Ta/Cu/NiFe has been observed byusing the angle-resolved X-ray photoelectron spectroscopy (XPS). The decrease of theexchange bias field for NiFe/FeMn films with Ta/ Cu buffer layers is mainly causedby the Cu atoms segregation at the interface between NiFe and FeMn.
关键词:
NiFe/FeMn
,
null
,
null
,
null
,
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