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Influence of Sputtering Pressure on the Structure and Mechanical Properties of Nanocomposite Ti-Si-N Thin Films

Vipin Chawla R. Jayaganthan Ramesh Chandra

材料科学技术(英文)

Nanocomposite Ti-Si-N thin films have been deposited on Si (100) substrate by direct current/radio frequency (DC/RF) magnetron sputtering. The effect of varying deposition parameters on the structure and mechanical properties of Ti-Si-N films has been investigated by characterization techniques such as X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and nanoindentation, respectively. XRD analysis of the thin films exhibit all (111), (200) and (220) peaks initially with varying sputtering pressure, but (111) peak dominates at higher sputtering pressure. The crystallite size calculated from XRD peaks shows that it increases with increasing sputtering pressure. Microstructural analysis reveals that the dense blurred grains transform into uniform grains in the films and shows porosity with increasing sputtering pressure. The surface roughness of the Ti-Si-N films increases with varying sputtering pressure. The hardness and Young0s modulus values of Ti-Si-N films are 33.7 and 278.6 GPa, respectively, with 0.7 Pa sputtering pressure but it decreases with further increase in sputtering pressure due to an increase in porosity of the films.

关键词: Ti-Si-N films

Ti-Si-N薄膜生长过程的计算机模拟

刘学杰 , 洪超 , 姜永军 , 孙士阳

表面技术

首次应用修正嵌入原子法(MEAM)以及动力学蒙特卡洛方法(KMC)对Ti-Si-N薄膜的生长过程进行了计算机仿真模拟.在合理选择势函数及MEAM各项参数的基础上,利用编程软件仿真在不同基底温度下的薄膜生长过程.与采用传统简单的Mouse势进行模拟的结果相比,这种新方法的模拟结果更加准确,与实验结果更加吻合.仿真结果表明:基底温度对Ti-Si-N薄膜的形成过程有着直接的影响,当基底温度为800 K时,岛所形成的形貌最为理想,缺陷率最低.

关键词: Ti-Si-N薄膜 , 薄膜生长 , 计算机模拟 , MEAM势

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