朱锋
,
魏长春
,
张晓丹
,
高艳涛
,
孙建
,
王岩
,
韩晓艳
,
赵颖
,
耿新华
功能材料与器件学报
doi:10.3969/j.issn.1007-4252.2005.04.006
采用VHF-PECVD技术沉积硼掺杂的P型微晶硅薄膜材料,在硅烷浓度(SC)为0.8%,反应气压93Pa时,随等离子体功率的增加,材料的晶化率和电导率先增大,后减小;薄膜的透过率随功率的增大而增加.将获得的P型微晶硅薄膜应用在微晶硅薄膜太阳电池中,电池结构为glass/p-μc-Si:H/I-μc-Si:H/n-μc-Si:H/Al, 厚度约1μm,没有背反射电极的情况下,电池效率达到了7.32%(Voc＝0.520V,Jsc＝21.33mA/cm2,FF＝64.74%).
关键词:
VHF-PECVD
,
微晶硅
,
太阳电池
陈庆东
,
王俊平
,
李洁
,
张宇翔
,
卢景霄
人工晶体学报
采用激活能测试装置测量VHF-PECVD高速沉积的本征微晶硅薄膜,并对不同晶化率的样品和不同沉积功率、不同沉积压强条件下沉积制备的样品的激活能进行了分析研究.结果表明:在非晶-微晶相变域附近,激活能随着晶化率的升高而降低;随着沉积功率的增大和沉积气压的增大,沉积速率提高,样品的激活能升高,通过提高沉积功率和沉积气压可以有效的抑制氧污染.
关键词:
VHF-PECVD
,
微晶硅
,
激活能
H.D.Yang
金属学报(英文版)
Raman scattering spectroscopy and scanning electron microscopy (SEM) techniques were used to determine the structural properties of two typical series of microcrystalline silicon (μc-Si:H) films deposited at different VHF plasma power and different working gas pressure by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technique. Raman spectra measurements show that both crystalline volume fraction Xc and average grain size d of μc-Si: H films are strongly affected by the two deposition conditions and are more sensitive to working gas pressure than VHF plasma power. SEM characterizations have further confirmed that VHF plasma power and working gas pressure could clearly enhance the surface roughness of/xc-Si : H films ascribing to polymerization reactions, which is also more sensitive to working gas pressure than VHF plasma power.
关键词:
VHF-PECVD
,
null
,
null
张晓丹
,
赵颖
,
朱锋
,
魏长春
,
孙建
,
侯国付
,
薛俊明
,
耿新华
,
熊绍珍
人工晶体学报
doi:10.3969/j.issn.1000-985X.2004.04.041
本文主要研究了用VHF-PECVD方法制备的不同辉光功率条件下系列硅薄膜样品.喇曼测试结果显示:在不同硅烷浓度(SC)条件下,非晶到微晶的过渡区发生在不同的功率点;暗电导随晶化率也体现出不同的变化,此结果表明不同SC、不同功率制备样品的结构特性和电学特性的内在规律是不同的;另外,扫描电子显微镜的测试结果表明样品的表面呈"菜花"状和剖面为柱状的结构特征.
关键词:
甚高频等离子体增强化学气相沉积
,
过渡区
,
微区喇曼光谱
,
扫描电子显微镜
