Vinay Kumari
,
Vinod Kumar
,
Devendra Mohan
,
Purnima
,
B.P. Malik
,
R.M. Mehra
材料科学技术（英文）
Variation of nonlinear optical properties with surface roughness of ZnO thin films deposited on corning glass substrates at different annealing temperature (TA) was reported. The films were characterized by X-ray diffraction (XRD), UV-Vis-NIR transmission and single beam z-scan technique using second harmonics of Nd:YAG laser. Surface morphology of the samples was investigated by atomic force microscopy (AFM). Surface roughness was found minimum (8.4 nm) for ZnO sample annealed at 450 °C. The nonlinear optical properties (NLO) were found to be dependent on surface roughness and the highest value of third order nonlinear susceptibility (χ3)=4.3×10-7 esu) was obtained for ZnO at TA 450 °C.
关键词:
ZnO films
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null
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null
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null
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null
,
null
Jun ZOU
,
Shengming ZHOU
材料科学技术（英文）
About Φ45 mm LiAlO2 single crystal was grown by Czochralski (Cz) technique. However, the full-width at half-maximum (FWHM) value was high to 116.9 arcsec. After three vapor transport equilibration (VTE) processes, we can obtain high-quality LiAlO2 slice with the FWHM value of 44.2 arcsec. ZnO films were fabricated on as-grown slices and after-VTE ones by pulsed laser deposition (PLD). It was found that ZnO films on the two slices have similar crystallinity, optical transmittance and optical band gap at room temperature. These results not only show that LAO substrate is suitable for ZnO growth, but also prove that the crystal quality of LAO substrate slightly affects the structural and optical properties of ZnO film.
关键词:
Crystal structure
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null
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null
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null
陈新亮
,
张德坤
,
赵颖
,
人工晶体学报
本文研究了B2H6掺杂流量(B掺杂)对平面结构MOCVD-ZnO薄膜的微观结构和光电性能影响.XRD、SEM和AFM测试的研究结果表明,玻璃衬底上制备的ZnO薄膜具有(002)峰择优取向的平面结构,B掺杂使薄膜的球状晶粒尺寸变小,10 sccm流量时晶粒尺寸为～15 nm.ZnO:B薄膜的最小电阻率为5.7×10-3Ω·cm.生长的ZnO薄膜(厚度d=1150 nm)在400～900 nm范围的透过率为82%～97%,且随着B2H6掺杂流量增大,光学吸收边呈现蓝移(即光学带隙Eg展宽)现象.
关键词:
MOCVD
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ZnO薄膜
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B掺杂
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太阳电池
臧航
,
王志光
,
魏孔芳
,
孙建荣
,
姚存峰
,
申铁龙
,
马艺准
,
杨成绍
,
庞立龙
,
朱亚斌
原子核物理评论
室温下用80 keV N离子注入ZnO薄膜样品,注量分别为5.0×10~(14),5.0×10~(15)和5.0×10~(16) ions/cm~2,然后用X射线衍射和透射电镜技术对样品的结构特性进行了表征.实验结果表明,由高度(002)择优取向的致密柱状晶构成的薄膜中,注入5.0×10~(15) ions/cm~2时,观测到缺陷生成和局域无序化现象,但薄膜总体结构仍保持柱状晶和(002)择优取向;随着注量的增大,晶格常数c和压应力呈增大趋势.对注入N离子对ZnO薄膜结构特性的影响机理进行了简单的讨论.
关键词:
ZnO薄膜
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N离子注入
,
X射线衍射
,
透射电镜
贾芳
,
曹培江
,
曾玉祥
材料导报
采用脉冲激光沉积技术(PLD)在氧气气氛中以高纯Zn为(99.999%)靶材,在单晶硅和石英衬底表面成功生长了ZnO薄膜.通过X射线衍射仪、表明轮廓仪、荧光光谱仪、紫外可见分光光度计对合成薄膜材料的晶体结构、厚度、光学性质等进行了研究,分析了ZnO薄膜的沉积时间对其性能的影响.结果表明,采用PLD法在室温下可以制备出(002)结晶取向和透过率高于75%的ZnO薄膜,但室温下沉积的ZnO薄膜的发射性能较差,沉积时间的延长不能改善薄膜的发光性能.
关键词:
脉冲激光沉积
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ZnO薄膜
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沉积时间
李伙全
,
曾祥华
,
韩玖荣
功能材料
在室温下利用射频磁控溅射法在硅（100）基片上制备ZnO薄膜,利用X射线衍射（XRD）和扫描电子显微镜（SEM）对其结晶性能进行分析。研究了制备条件对薄膜沉积速率的影响。分析了薄膜沉积速率对薄膜结晶状况的影响及源气体中的氧气和氩气的流量比对薄膜结晶状况的影响。研究结果表明,薄膜的生长速率强烈依赖于射频功率和工作气压,薄膜的结晶性能强烈依赖于薄膜的沉积速率和反应气体中氧气和氩气的流量比。制备高结晶质量的ZnO薄膜的最佳工艺参数为靶到衬底的距离为4cm,输入功率为250W,源气体中氩气和氧气的流量比n（Ar）∶n（O2）为5∶20,溅射工作气压为2Pa。在最佳工艺条件下所制备的薄膜表面平整致密,接近单晶,在可见光区的透射率高达90%。
关键词:
ZnO薄膜
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工艺参数
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择优取向
