J. Xu
金属学报(英文版)
Gallium Nitride film was successfully separated from sapphire substrate by laser radi-ation. The absorption of the 248nm radiation by the GaN at the interface results inrapid thermal decomposition of the interfacial layer, yielding metallic Ga and N2 gas.The substrate can be easily removed by heating above the Ga melting point (29℃).X-ray diffraction, atomic force microscopy and Photoluminescence of GaN before andafter lift-off process have been performed, which demonstrated that the separation andtransfer process do not alter the structural quality of the GaN films. And further dis-cussions on the threshold energy and crack-free strategies of laser lift-off process havealso been presented.
关键词:
GaN
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null
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null
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null
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null
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null
金属学报(英文版)
粒裕希停桑谩。疲希遥茫拧。停桑茫遥希樱茫希校佟。希拢樱牛遥郑粒裕桑希巍。希啤。停粒牵危牛裕遥希巍。樱校眨裕裕牛遥牛摹。粒蹋眨停桑危眨停樱桑蹋桑茫希巍。粒蹋蹋希佟。疲桑蹋停?##2##3##4##5ATOMICFORCEMICROSCOPYOBSERVATIONOFMAGNETRONSPUTTEREDALUMINUM-SILICONALLOYFILMSJ.W.Wu,J.H.FangandZ.H.Lu(NationalLaboratoryofMoleculeandBiomoleculeElectronics,SoutheastUniversity,Nanjing210096,ChinaManuscriptreceived27October1995)Abstrcat:Twodifferentsurfacemorphologycharacteristicsofmagnetronsputteredaluminumsilicon(Al-Si)alloyfilmsdepositedat0and200℃wereobservedbyatomicforcemicroscopy(AFM).Oneisirregularlyshapedgrainsputtogtheronaplane.TheotherisirregularlyshapedgrainsPiledupinspace.Nanometer-sizedparticleswithheightsfrom1.6to2.9nmwerefirstobserved.Onthebasisoftheseobservationsthegrowthmechanismofmagnetronsputteredfilmsisdiscussed.Keywords:magnetronsputtering,Al-Sialloy,surfacemorphology,atomicforcemicroscopy,filmgrowthmechanism1.IntroductionTheuseofaluminumalloys[1,2],inparticularAl-Si,isacommonfeatureinmanysinglelevelandmultilevelinterconnectionschemesadoptedinthemanufactureofmicroelectronicdevicesbecauseofseveraldesirableproperties.TheAl-Sigrainmorphology(size.geometryanddistributionofgrainsisassociatedwithstepcoverage[3],electromigration[4]andinterconnectsresistivity[5]etc..Thus,characterizationofAl-Sialloysurfacemorphologyisveryimportant,especiallywhenintegratedintensityincreasesandlinewidthsof0.3to0.5μmbecomecommon.Inthepasttwentyyears,theAl-Sialloysurfacemorphologywhichaffectsthereliabilityofmicroelectronicdeviceshasbeenwidelyinvestigatedbyscanningelectronmicroscopy(SEM),transmissionelectronmicroscopy(TEM)etc.[5-7].However,SEMandTEMhavetheirlimitationorinconvenience,forexample,theverticalresolutionofSEMisnothighandTEMneedscomplexsamplepreparation.Recently,anewgrainboundaryetchingmethodwasproposed￣[8]whichalsoneedstroublesomechemicaletching.Atomicforcemicroscopy(AFM),sinceitsemerging,hasbecomemoreandmoreusefulinphysics,chemistry,materialsscienceandsurfacescience,becauseofitshighresolution,easeofsamplepreparationandrealsurfacetopography.Recently,discussion[9,10]waspresentedonhowAFMwillplayaroleinsemiconductorindustry.Asaresponsetothisdiscussion,weusedAFMtoinvestigateAl-SialloysurfacemorphologyandhaveobtainedsomeresultswhichcannotberevealedbySEMorTEM.ThisindicatesthatAFMisagoodcharacterizationtoolinsemiconductorindustry.2.SamplePreparationInourexperiments,aluminumwith30ppmsiliconwassputteredonsiliconsubstrateinbatchdepositionmodeAllthreefilmswiththicknessof1.6μmweredepositedusinganargonsputteringpressureof4.2×10￣-3Pa.TheotherdepositionparametersaredescribedinTable1.Thesubstratewascleanedusingstandardpremetallizationcleaningtechniquespriortofilmdeposition.3.ExperimentalResultsandDiscussionTheAFMmeasurementswereperformedonacommercialsystem(NanoscopeIII,DigitalInstruments,SantaBarbara).Thetipismadeofmicrofabricatedsiliconnitride(Si_3N_4)Itisattachedtoa200μmcantileverwithaforceconstantofabout0.12N/m.Beforethesurfaceofsamplewasexamined.agoodtipwithananometer-sizedprotrusionatitsendwasselectedbeforehand,whichcanbeobtainedbyimagingtheatomicstructureofmicasubstrateandagoldgrid.AtypicaloperatingforcebetweenthetipandAl-Sisamplesurfaceisoftheorderof10￣-8Nandallimagesweretakenatroomtemperatureinair.AtypicaltopographicviewoftheAl-SifilmsisshowninFig.1(allimagescansizeis5by5μma,bandcarerespectivelyforsample1,2,and3).FromFig.la,itcanbeseenthatirregularlyshapedgrainstiltinginvaryingdegreespileupinspace,andgroovesamongtheirregularlyshapedgrainsaredifficulttodecideatacertainarea(wedefineitascharacteristicA).Toourknowledge,onreportsonthesurfacemorphologyhavebeenpresentedbefore.InFig1b,however,irregularlyshapedgrainsassembleonaPlaneandgroovesamongtheirregularlyshapedgrainsareeasytodecide(wedefineitascharacteristicB),whichisinagreementwithmanypreviousreports[5-7].InFig.1c,bothcharacteristicA(arrowA)andcharacteristicB(arrowB)wereobserved.IndoingAFMexperiments,weselectedfivedifferentscanareastobeimagedforeachsampleandfoundthatallimagesofeachsamplearerespectivelysimilartoFig.1a,bandc.Also,wenotedthatthesurfaceofinFig.1a.WethinkthatdepositionparameterswillinfluenceAl-Sisurfacemorphology,andthetiltedgrainsmaybesusceptibletomicrocracking.Byreducingthescansizeareato2by2μm(Fig.2aandb).Weobtainedmanyidenticalresultsasdescribedabove,suchasirregularlyshapedgrainsetc.Forthefirsttime,wefoundnanometersizedparticlesonirregularlyshapedgrainsurfacewhichcannotberevealedbySEMbecausethediameterofthesenanoparticlesisabout10nmandtheheightofthesenanoparticlesisintherangeof1.6to2.9nm.Inimaging,wenotedthatrotatingthescandirectionandchangingthescanfrequencydidnotaffectthestructureofthesegrainsasshowninFig.2aandb,rulingoutthepossibilitythatscanninginfluencedtheshapeoftheseparticlesorcausedsomesimilarimagingartifacts.Also,wenotedthatthenanoparticleswerenotobservedontheslopesofthegrooves(Fig.2aandb).Thisphenomenoncanbeexplainedasfollows:thepotentialenergyattheslopeislargerthanthatelsewhere,sotheparticlesseemmorelikelytobedepositedontheseareaswithlowerpotentialenergy.Fig.2c,scansize250by250nm,isazoomtopographicimage(whiteoutlineinb).Itshowsunevendistributionofthenanoparticles.Andtheheightdifferenceofthenanoparticlesindicatesdifferentgrowingspeed.Wethinkbasedonthemorphologyofnanoparticles,thattheheightdifferenceandunevendistributionofthesenanoparticlesshowdifferentgrowingadvantageandindicatethatatomshaveenoughenergytomovetoasuitablegrowingspot.Theenergymaybefromthefollowingsources:surfacetemperaturefluctuation,stressdifferenceorcollisionbetweenhighspeedsputteredatoms.Thesenanoparticlesgoongrowingandformmanyirregularlyshapedgrains.AndtheseirregularlyshapedgrainsfurtherconnecteachotheraccordingtocharacteristicAorB,finallyformingtheAl-Sisurfacemorphology.4.ConclusionWecandrawthefollowingconclusionsfromtheabove.First,theexperimentalresultsshowedthatAFMisapowerfultooltoinvestigatethedetailsofAl-Sisurfacemorphologywhichcangreatlyenrichourknowledgeofthefilmgrowthmechanism.Second,depositionconditionsplayanimportantroleindeterminingtheAl-Sisurfacemorphology.Third,thetwoAl-Sisurfacemorphologycharacteristicsarethatirregularlyshapedgrainsassembleonaplaneandirregularlyshapedgrainstiltinginvaryingdegreespileupinspace.Fourth,forthefirsttime,nanoparticleswereobservedonirregularlyshapedgrainsurfacewhichsuggestedthatthefilmgrowthmechanismwasbyinhomogeneousnucleation.Acknowledgements-BeneficialdiscussionswereheldwithDr.ZhenandMr.Zhu.ThisworkwaspartiallysupportedbytheNationalNaturalScienceFoundationofChina.RFFERENCES｜｜1D.pramanikandA.N.Saxena,SolidStateTechnol.26(1983)127.2D.pramanikandA.N.Saxena,SolidStateTechnol.26(1983)131.3D.pramanikandA.N.Saxena,SolidStateTechnol.33(1990)73.4S.S.IyerandC.Y.Worg,J.Appl.phys.57(1985)4594.5J.F.Smith,SolidStateTechnol.27(1984)135.6D.GerthandD.Katzer,ThinSolidFilm208(1992)67.7R.J.WilsonandB.L.Weiss,ThinSolidFilm207(1991)291.8E.G.Solley,J.H.Linn,R.W.BelcherandM.G.Shlepr,SolidStateTechnol33(1990)409I.SmithandRHowland,SolidStateTechnol.33(1990)53.10L.Peters,SemiconductorInternational16(1993)62.##61D.pramanikandA.N.Saxena,SolidStateTechnol.26(1983)127.2D.pramanikandA.N.Saxena,SolidStateTechnol.26(1983)131.3D.pramanikandA.N.Saxena,SolidStateTechnol.33(1990)73.4S.S.IyerandC.Y.Worg,J.Appl.phys.57(1985)4594.5J.F.Smith,SolidStateTechnol.27(1984)135.6D.GerthandD.Katzer,ThinSolidFilm208(1992)67.7R.J.WilsonandB.L.Weiss,ThinSolidFilm207(1991)291.8E.G.Solley,J.H.Linn,R.W.BelcherandM.G.Shlepr,SolidStateTechnol33(1990)409I.SmithandRHowland,SolidStateTechnol.33(1990)53.10L.Peters,SemiconductorInternational16(1993)62.##A##BATOMIC FORCE MICROSCOPY OBSERVATION OF MAGNETRON SPUTTERED ALUMINUM-SILICON ALLOY FILMS$$$$J.W.Wu,J.H. Fang and Z.H.Lu (National Laboratory of Molecule and Biomolecule Electronics,Southeast University,Nanjing 210096, China Manuscript received 27 October 1995)Abstrcat:Two different surface morphology characteristics of magnetron sputtered aluminumsilicon(Al-Si)alloy films deposited at 0 and 200℃ were observed by atomic force microscopy(AFM).One is irregularly shaped grains put togther on a plane.The other is irregularly shaped grains Piled up in space. Nanometer-sized particles with heights from 1.6 to 2.9 nm were first observed. On the basis of these observations the growth mechanism of magnetron sputtered films is discussed.
关键词:
:magnetron sputtering
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null
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null
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null
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null
S.W.Li
金属学报(英文版)
Structural and optical properties of vertically aligned lnAs quantum dots (QDs) were embedded in Al0.5Ga0.5As spacer layers. The aligned QDs were grown at 520℃ in the Stranski-Krastanow (S-K) growth mode of molecular beam epitaxy. To improve QD characteristics, we employed a size- and density-controlled growth procedure in the upper layers. Measurements by reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM) showed that both the size and density of the QDs. The temperature dependence of the wavelength-integrated photoluminescence (PL) intensity revealed the InAs QD emission.
关键词:
quantum dot
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null
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null
陶荟春
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朱豫
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由吉春
应用化学
doi:10.11944/j.issn.1000-0518.2016.08.150362
采用温控原子力显微镜方法，在线跟踪了远离临界组成聚甲基丙烯酸甲酯/苯乙烯-丙烯腈无规共聚物（PMMA/SAN）共混薄膜的表面相分离行为，并研究了其动力学规律。结果表明，在SAN含量为70%的样品中观察到了表面相分离行为，其过程可分为早期、中期和晚期3个阶段，分别对应特征化的标度指数：早期结果验证了Cahn线性理论，即标度指数为零；中期相行为主要受“碰撞-扩散”机理控制，因此表现出1/3的标度指数；在相分离后期，流体动力学主导了相区的生长和归并行为，此时标度指数变为2/3。我们的研究结果对于深刻理解高分子相行为具有积极作用，并将对高分子薄膜加工提供必要的指导。
关键词:
共混
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相分离
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动力学
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原位
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原子力显微镜
洪晓东
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王铀
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杨永康
高分子材料科学与工程
介绍了原子力显微镜(AFM)在高分子薄膜领域中的最新应用技术.在定位观察薄膜时,可采用碳纳米管定位法以及针尖打孔定位法对所观察的样品进行定位,该方法可实现对样品进行离位处理之后再次精确定位.在测量高分子薄膜厚度时,可采用针尖打孔法和漂膜法通过制备断面台阶利用AFM精确测量薄膜厚度.基于特殊相分离形貌的嵌段共聚物薄膜,可采用AFM针尖对其表面进行锻造纳米加工.这些技术拓展了AFM在聚合物薄膜表征以及纳米加工等领域的应用.
关键词:
原子力显微镜
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定位技术
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测膜厚
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纳米加工
赵昆
,
黄康权
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张丽
人工晶体学报
doi:10.3969/j.issn.1000-985X.2004.04.047
用对靶溅射技术在MgAl2O4 (100) (MAO) 和SrTiO3 (100) (STO)单晶基底上制备Pt薄膜.基底温度为700℃时,Pt薄膜外延生长为(200)取向,Pt/STO 薄膜的电阻率很低,而Pt/MAO 薄膜表现出高电阻特征.此外,Pt (50nm)/La0.67Ca0.33MnO3 (50nm)/STO的制备和研究表明,在包括庞磁电阻材料的器件设计中,Pt是一种较好的电极材料.
关键词:
Pt 薄膜
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溅射
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X射线衍射
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原子力显微镜
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庞磁电阻
刘新普
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曹亚
高分子材料科学与工程
利用原子力显微镜对两种温敏性不同嵌段序列N-异丙基丙烯酰胺（NIPAM）与N,N-二甲基丙烯酰胺（DMA）的三嵌段共聚物P（DMA32-b-NIPAM166-b-DMA32）、P（NIPAM65-b-DMA30-b-NIPAM53）溶液的聚集形貌进行了研究,前者在15℃不同质量浓度均以单分子线团聚集,50℃时1.0 g/L形成胶束间大聚集体,直径约为3.3μm,降低质量浓度至0.1g/L及以下则形成多分子胶束,但无胶束间聚集体形成。后者在15℃、50℃,1.0 g/L质量浓度均形成胶束间聚集体,降低质量浓度至0.1 g/L、0.01 g/L则只形成多分子胶束,胶束直径约60 nm-90 nm。
关键词:
N-烷基取代丙烯酰胺
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三嵌段共聚物
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原子力显微镜
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温敏性
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聚集形貌
韩军
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邢艳辉
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邓军
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朱延旭
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徐晨
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沈光地
功能材料
利用金属有机物化学气相淀积（MOCVD）技术在蓝宝石衬底上生长了InGaN∶Mg薄膜,通过改变外延生长温度优化p型InGaN∶Mg表面形貌和电学特性。在800℃,InGaN的空穴浓度为1.9×1019cm-3,电阻率较低,通过原子力显微镜观察到粗化的样品表面有很多圆丘,其均方根粗糙度是所有样品中最高的,综合粗化的表面和优化电学特性的p-InGaN接触层的LED光功率提高23%。
关键词:
Mg掺杂InGaN
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金属有机物化学气相淀积
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原子力显微镜
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X射线双晶衍射
崔举庆
,
张洋
,
陆现彩
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胡柏星
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沈健
材料导报
采用原子力显微镜(AFM)研究了TiO_2颗粒在不同介质条件下的聚集行为.结果表明,TiO_2的聚集存在两重行为即大颗粒间的弱聚集和晶粒间的强聚集.超声条件下,水中可以打开大颗粒间的弱聚集而不能打开强聚集,但是在同样条件下通过选择含有单供电子的分子如丁酮或三乙胺为介质,可以打开强聚集得到单个晶粒.结合介质的分子结构,提出了TiO_2的聚集源于表面不饱和配位原子的氢键及配位的作用机理.对理解底端向上策略组装纳米晶粒和避免纳米颗粒在应用中存在的聚集问题有重要意义.
关键词:
TiO_2
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聚集
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原子力显微镜
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配位
