材料期刊网

Comparison between Double Crystals X-ray Diffraction and Micro-Raman Measurement on Composition Determination of High Ge Content Si1-xGex Layer Epitaxied on Si Substrate

Lei ZHAO

材料科学技术（英文）

It is important to acquire the composition of Si1-xGex layer, especially that with high Ge content, epitaxied on Si substrate. Two nondestructive examination methods, double crystals X-ray diffraction (DCXRD) and micro-Raman measurement, were introduced comparatively to determine x value in Si1-xGex...

关键词: Si1-xGex , high , Ge , content , composition , determi