{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"对比研究了轻掺硼(1.5×1016 cm-3)和重掺硼(1.2×1020 cm-3)直拉<span style=\"color:red\">硅片</span>上维氏压痕周围的残余应力分布及压痕位错在900℃滑移的情况.研究表明:重掺硼直拉<span style=\"color:red\">硅片</span>上压痕周围的残余应力及应力场区域显著小于轻掺硼<span style=\"color:red\">硅片</span>的.在900℃热处理时,轻掺硼<span style=\"color:red\">硅片</span>上的压痕位错发生显著的滑移,而重掺硼<span style=\"color:red\">硅片</span>上的压痕位错几乎不发生滑移.一方面,重掺硼降低了<span style=\"color:red\">单晶硅</span>的压痕断裂韧性,使侧向裂纹尺寸增大而释放更多的应力,从而使压痕的残余应力变小;另一方面,重掺硼对位错具有明显的钉扎作用,使位错的滑移需要更大的应力驱动.可以认为正是上述两方面的效应使得重掺硼<span style=\"color:red\">硅片</span>的压痕位错几乎不发生滑移.","authors":[{"authorName":"赵泽钢","id":"396a26a9-7a95-40d5-8591-96a5424050c1","originalAuthorName":"赵泽钢"},{"authorName":"赵剑","id":"9a5f1c84-c564-4eba-9e22-f967152ef538","originalAuthorName":"赵剑"},{"authorName":"马向阳","id":"abd0ca34-c814-40d9-a3d8-9ff33c2c1119","originalAuthorName":"马向阳"},{"authorName":"杨德仁","id":"0bc0c8a6-9e97-423d-9a17-83808be283e4","originalAuthorName":"杨德仁"}],"doi":"10.14136/j.cnki.issn 1673-2812.2016.03.001","fpage":"345","id":"de2dbbf5-eac3-4996-8ef8-aa168e594223","issue":"3","journal":{"abbrevTitle":"CLKXYGCXB","coverImgSrc":"journal/img/cover/CLKXYGCXB.jpg","id":"13","issnPpub":"1673-2812","publisherId":"CLKXYGCXB","title":"材料科学与工程学报"},"keywords":[{"id":"10071dcf-ea98-4546-8608-bbb5e579b70d","keyword":"<span style=\"color:red\">单晶硅片</span>","originalKeyword":"单晶硅片"},{"id":"4637dc2d-b7d7-4036-94e8-a0f518c2d011","keyword":"重掺硼","originalKeyword":"重掺硼"},{"id":"3c0ebef9-8e8e-4fd6-8557-4599785263dc","keyword":"位错滑移","originalKeyword":"位错滑移"}],"language":"zh","publisherId":"clkxygc201603001","title":"重掺硼对直拉<span style=\"color:red\">单晶硅片</span>上压痕位错运动的影响","volume":"34","year":"2016"},{"abstractinfo":"研究了TMAH(四甲基氢氧化铵)和NaOH腐蚀液在制作<span style=\"color:red\">单晶硅片</span>小绒面中的应用,制作出平均尺寸小于2μm的金字塔绒面;比较了不同<span style=\"color:red\">硅片</span>预处理(酸减薄、碱减薄、原片)对金字塔绒面尺寸、均匀性、覆盖率以及反射率的影响以及电池的I-V性能,分析了不同绒面结构对接触电阻的影响;指出<span style=\"color:red\">单晶硅</span>小金字塔绒面是使用激光制备高效晶体硅太阳电池的关键.","authors":[{"authorName":"梁学勤","id":"709e8fc8-e6f6-4a06-a113-998846a9c5b1","originalAuthorName":"梁学勤"},{"authorName":"冯成坤","id":"1e3dd6eb-1c6f-4a08-b40c-1f9100672f82","originalAuthorName":"冯成坤"},{"authorName":"陈奕峰","id":"76feef53-69bc-476d-83b1-17ba04730bae","originalAuthorName":"陈奕峰"},{"authorName":"沈辉","id":"f041d4e5-b926-4326-bb4c-eaf0fc41bd22","originalAuthorName":"沈辉"},{"authorName":"闻立时","id":"b8b036ce-f958-4087-9ed3-fa5cc19366df","originalAuthorName":"闻立时"}],"doi":"","fpage":"13","id":"9368107d-7b6e-4b7c-88cf-adc1f9746a1c","issue":"2","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"fae29f68-6358-4069-a833-d7eb3289ad26","keyword":"<span style=\"color:red\">单晶硅片</span>","originalKeyword":"单晶硅片"},{"id":"13c08b0e-22fe-42c2-97bd-0ec630579614","keyword":"小金字塔绒面","originalKeyword":"小金字塔绒面"},{"id":"dd4179ca-9aa9-4019-b4b4-467d1dbfaf95","keyword":"TMAH","originalKeyword":"TMAH"},{"id":"9154b52a-1754-4f98-af7c-d412a7ff3672","keyword":"NaOH","originalKeyword":"NaOH"},{"id":"94912994-d3e8-42ef-be03-0c357db89507","keyword":"太阳电池","originalKeyword":"太阳电池"}],"language":"zh","publisherId":"cldb201102005","title":"<span style=\"color:red\">单晶硅</span>小金字塔绒面及其对太阳电池性能的影响","volume":"25","year":"2011"},{"abstractinfo":"用HF+HNO.3溶液蚀刻<span style=\"color:red\">单晶硅</span>表面，通过扫描电镜表征其形貌和厚度变化，研究了蚀刻液浓度、蚀刻时间及温度对<span style=\"color:red\">单晶硅</span>化学蚀刻行为的影响.结果表明，温度对蚀刻速率的影响较大，温度升高使表面蚀刻不均匀，厚度急剧减小；<span style=\"color:red\">硅片</span>的厚度及表面形貌在蚀刻液浓度大于2.0 mol/L时变化较显著；室温时用1.5 mol/L HF+HNO3蚀刻15 min获得了蚀坑大小适中(10 μm～15 μm)、分布均匀的多孔状表面.","authors":[{"authorName":"文九巴","id":"1d9003dd-72fd-48b6-8318-544b55f8cade","originalAuthorName":"文九巴"},{"authorName":"樊丽梅","id":"ae6592da-68f5-4700-b8c4-d0bd44130d04","originalAuthorName":"樊丽梅"},{"authorName":"赵胜利","id":"548c7f4a-da82-4442-98e4-48fdbc2a6b30","originalAuthorName":"赵胜利"},{"authorName":"祝要民","id":"55b3a727-16eb-4281-aa28-41e033b07daf","originalAuthorName":"祝要民"}],"categoryName":"|","doi":"","fpage":"269","id":"36d7ad7c-c9af-44e9-a252-f36fd6621e8f","issue":"4","journal":{"abbrevTitle":"FSXB","coverImgSrc":"journal/img/cover/腐蚀学报封面.jpg","id":"24","issnPpub":"2667-2669","publisherId":"FSXB","title":"腐蚀学报（英文）"},"keywords":[{"id":"4acd1251-3064-48ef-a284-6c206482637b","keyword":"<span style=\"color:red\">单晶硅片</span>","originalKeyword":"单晶硅片"},{"id":"ce4c6f35-18cd-47d1-9213-4fa3b23deb27","keyword":"null","originalKeyword":"null"},{"id":"f597e76d-d768-4ee1-9fd8-abdadca69349","keyword":"null","originalKeyword":"null"}],"language":"zh","publisherId":"1002-6495_2007_4_15","title":"<span style=\"color:red\">单晶硅</span>化学蚀刻行为的研究","volume":"19","year":"2007"},{"abstractinfo":"用HF+HNO3溶液蚀刻<span style=\"color:red\">单晶硅</span>表面,通过扫描电镜表征其形貌和厚度变化,研究了蚀刻液浓度、蚀刻时间及温度对<span style=\"color:red\">单晶硅</span>化学蚀刻行为的影响.结果表明,温度对蚀刻速率的影响较大,温度升高使表面蚀刻不均匀,厚度急剧减小;<span style=\"color:red\">硅片</span>的厚度及表面形貌在蚀刻液浓度大于2.0 mol/L时变化较显著;室温时用1.5 mol/L HF+HNO3蚀刻15 min获得了蚀坑大小适中(10 μm～15 μm)、分布均匀的多孔状表面.","authors":[{"authorName":"文九巴","id":"31bc38e5-8486-4d03-9d72-ff5013d3d5a9","originalAuthorName":"文九巴"},{"authorName":"樊丽梅","id":"5e623384-95d6-49d1-a7cf-209c925e3fa4","originalAuthorName":"樊丽梅"},{"authorName":"赵胜利","id":"5cc33702-f429-4a44-8efa-0a65bb9751b1","originalAuthorName":"赵胜利"},{"authorName":"祝要民","id":"deab5e69-c555-43e1-89b6-b2b9277cba39","originalAuthorName":"祝要民"}],"doi":"10.3969/j.issn.1002-6495.2007.04.010","fpage":"269","id":"652c616e-5f4f-4c8d-9b91-2b2de3c97dc6","issue":"4","journal":{"abbrevTitle":"FSXB","coverImgSrc":"journal/img/cover/腐蚀学报封面.jpg","id":"24","issnPpub":"2667-2669","publisherId":"FSXB","title":"腐蚀学报（英文）"},"keywords":[{"id":"c2b00581-5fca-4c4e-b6ef-4b11d50f7037","keyword":"<span style=\"color:red\">单晶硅片</span>","originalKeyword":"单晶硅片"},{"id":"07d8d485-f1ca-4aa9-a3a6-93cf56aaea40","keyword":"化学蚀刻","originalKeyword":"化学蚀刻"},{"id":"40673c08-523c-4c03-b348-e447c97cddb2","keyword":"表面形貌","originalKeyword":"表面形貌"}],"language":"zh","publisherId":"fskxyfhjs200704010","title":"<span style=\"color:red\">单晶硅</span>化学蚀刻行为的研究","volume":"19","year":"2007"},{"abstractinfo":"采用酸碱两种不同的化学蚀刻液对<span style=\"color:red\">单晶硅</span>表面进行蚀刻,通过扫描电镜(SEM)对其形貌进行了表征,考察了蚀刻液浓度、蚀刻时间及温度对表面形貌的影响.结果表明,在HNO3+HF溶液中,20℃时用2.81mol/L HF+18.81mol/L HNO3反应5min或2.67mol/L HF+17.85mol/L HNO3反应15min,制得了<span style=\"color:red\">硅片</span>表面腐蚀坑大小适中、分布均匀的多孔状表面;在KOH水溶液中,50℃时在33%的KOH水溶液中反应10min获得了表面积大、分布均匀的绒状表面.","authors":[{"authorName":"樊丽梅","id":"918016da-826e-4096-9039-4dfafdc9bbe0","originalAuthorName":"樊丽梅"},{"authorName":"文九巴","id":"bc51c2ff-3ef7-4ec9-802f-efcf71706eb2","originalAuthorName":"文九巴"},{"authorName":"赵胜利","id":"2b5a645c-da98-463c-a773-4c62390fb435","originalAuthorName":"赵胜利"},{"authorName":"祝要民","id":"4448cd5d-73d5-4c4b-956b-f6fb4aa208b8","originalAuthorName":"祝要民"}],"doi":"10.3969/j.issn.1001-3660.2007.01.007","fpage":"19","id":"67d99fde-1c17-43f9-bdcc-5e8b157bf375","issue":"1","journal":{"abbrevTitle":"BMJS","coverImgSrc":"journal/img/cover/BMJS.jpg","id":"3","issnPpub":"1001-3660","publisherId":"BMJS","title":"表面技术   "},"keywords":[{"id":"c9521fdd-0489-402f-bd53-a6fcd13b416b","keyword":"化学蚀刻","originalKeyword":"化学蚀刻"},{"id":"15603c96-9ac4-4f0d-bd98-2312f6321fce","keyword":"<span style=\"color:red\">单晶硅片</span>","originalKeyword":"单晶硅片"},{"id":"f52b7f4d-051c-46c8-a2fd-8f327acdf4af","keyword":"表面形貌","originalKeyword":"表面形貌"}],"language":"zh","publisherId":"bmjs200701007","title":"化学蚀刻<span style=\"color:red\">单晶硅</span>及其表面形貌研究","volume":"36","year":"2007"},{"abstractinfo":"目的 验证介电泳抛光方法的有效性,研究电极形状对介电泳抛光方法均匀性、抛光效率和去除率的影响. 方法 选取直径76. 2 mm的<span style=\"color:red\">单晶硅片</span>为实验对象,进行传统化学机械抛光( CMP)实验和使用4种电极形状的介电泳抛光实验,每隔30 min测量<span style=\"color:red\">硅片</span>不同直径上的表面粗糙度以及<span style=\"color:red\">硅片</span>的质量,然后对测量的数据进行处理和分析. 结果 与传统CMP方法比较,使用介电泳抛光方法抛光的<span style=\"color:red\">硅片</span>,不同直径上的表面粗糙度相差小,粗糙度下降速度快,使用直径60 mm圆电极形状介电泳抛光时相差最小,粗糙度下降最快. 介电泳抛光方法去除率最低能提高11 . 0%,最高能提高19 . 5%,最高时所用电极形状为内径70 mm、外径90 mm的圆环. 结论 介电泳抛光方法抛光均匀性、效率和去除率均优于传统CMP方法.","authors":[{"authorName":"林益波","id":"ef6bdb26-5678-477b-a708-e02981d603ce","originalAuthorName":"林益波"},{"authorName":"赵天晨","id":"37e78d21-b714-4231-a0a9-c3b0afd83939","originalAuthorName":"赵天晨"},{"authorName":"邓乾发","id":"7e44370b-29ee-44ea-b979-96f7bd6c9e86","originalAuthorName":"邓乾发"},{"authorName":"袁巨龙","id":"66770a6b-d27e-4d65-9e3d-aa5525368f35","originalAuthorName":"袁巨龙"}],"doi":"10.16490/j.cnki.issn.1001-3660.2016.01.025","fpage":"155","id":"f10db4ca-6451-42f6-ba05-b2e6d5a00ff8","issue":"1","journal":{"abbrevTitle":"BMJS","coverImgSrc":"journal/img/cover/BMJS.jpg","id":"3","issnPpub":"1001-3660","publisherId":"BMJS","title":"表面技术   "},"keywords":[{"id":"ab179c0c-16ad-46f9-8538-e029b07f7308","keyword":"介电泳抛光","originalKeyword":"介电泳抛光"},{"id":"c4cc4939-02b1-4e60-9927-b3921befdcd6","keyword":"电极形状","originalKeyword":"电极形状"},{"id":"744a95a6-c2d4-4026-87a3-362fa38453f2","keyword":"<span style=\"color:red\">单晶硅片</span>","originalKeyword":"单晶硅片"},{"id":"5ca275c4-cbd3-488e-81e6-da765a1e2ccc","keyword":"均匀性","originalKeyword":"均匀性"},{"id":"9372cad2-8e1b-454b-ac65-0f46c4b65234","keyword":"表面粗糙度","originalKeyword":"表面粗糙度"},{"id":"b78ab093-7c4f-4082-bbcb-377154fa30c0","keyword":"去除率","originalKeyword":"去除率"}],"language":"zh","publisherId":"bmjs201601025","title":"介电泳抛光方法及其电极形状的实验研究","volume":"45","year":"2016"},{"abstractinfo":"利用等离子体辅助电弧沉积技术在高速钢片和<span style=\"color:red\">单晶硅片</span>P(100)上沉积ZrAlN多元薄膜,利用扫描电镜、能谱分析、X射线衍射对薄膜进行了结构和形貌表征,利用显微硬度计、摩擦磨损试验仪对薄膜的性能进行了检测,并研究了铝含量对薄膜组织结构、形貌、显微硬度及耐磨性能等的影响.结果表明:ZrAlN多元薄膜有(111)面的择优取向,随Al含量的增加,(111)衍射峰的位置向小角度偏移,当Al原子分数大于3%时,薄膜中出现AlN相;随着Al含量的增加,薄膜的硬度和耐磨损性能先增加后降低,在Al原子分数为3%时,获最高硬度1570 HV0.5N和最小磨痕宽度93μm,这是薄膜中Al含量不同引起晶体结构变化造成的.","authors":[{"authorName":"秦聪祥","id":"5566c169-9ca0-4192-bd70-eab477a81d49","originalAuthorName":"秦聪祥"},{"authorName":"胡社军","id":"bed4dc3c-9d76-4cdb-9682-1e7bdcbb58a2","originalAuthorName":"胡社军"},{"authorName":"汝强","id":"27edbafa-8829-408a-85ef-5862f4e55eff","originalAuthorName":"汝强"}],"doi":"10.3969/j.issn.1001-1560.2007.03.001","fpage":"1","id":"c9cbae98-4abb-44ca-a8fc-7114135ccc93","issue":"3","journal":{"abbrevTitle":"CLBH","coverImgSrc":"journal/img/cover/CLBH.jpg","id":"7","issnPpub":"1001-1560","publisherId":"CLBH","title":"材料保护"},"keywords":[{"id":"8a598b64-280e-45be-ab0f-831c1ba24999","keyword":"ZrAlN涂层","originalKeyword":"ZrAlN涂层"},{"id":"5680edc5-b561-4acc-b1a9-7ddf2c1ef288","keyword":"离子束辅助沉积","originalKeyword":"离子束辅助沉积"},{"id":"cd9f0520-5246-41c8-8870-1473e949a7c7","keyword":"电弧离子镀","originalKeyword":"电弧离子镀"},{"id":"4d063634-67a7-4ab6-ad96-d9731663b384","keyword":"高速钢片","originalKeyword":"高速钢片"},{"id":"3c4d31c2-e072-4ba5-9246-2e206879c4bf","keyword":"<span style=\"color:red\">单晶硅片</span>","originalKeyword":"单晶硅片"},{"id":"795bbf53-d0e4-41c1-be24-9088cc0dd4fe","keyword":"性能","originalKeyword":"性能"}],"language":"zh","publisherId":"clbh200703001","title":"Al含量对真空电弧沉积ZrAlN薄膜性能的影响","volume":"40","year":"2007"},{"abstractinfo":"多孔硅吸杂是减少晶体硅中杂质和缺陷,提高太阳能电池转换效率的有效方法.本文采用电化学腐蚀方法在<span style=\"color:red\">单晶硅片</span>上制备多孔硅.通过观察多孔硅的形貌、孔隙率、多孔层厚度及<span style=\"color:red\">单晶硅片</span>的电阻率变化,研究不同的腐蚀时间对制备多孔硅的吸杂效果的影响,并分析多孔硅吸杂的机理.结果表明,在J=100 mA/cm2条件下腐蚀时间为30 min、40 min、50 min、60 min吸杂处理后,电阻率均提高,且随着腐蚀时间的增加,电阻率相应增加,与多孔硅的形貌、孔隙率和多孔层厚度的变化趋势一致.多孔硅形成伴随弹性机械应力出现,随腐蚀时间增加,应力增加,晶格常数相应增加,这都有利于缺陷和金属杂质在多孔硅层-基底界面处迁移和富集,导致<span style=\"color:red\">单晶硅</span>吸杂后电阻率增大.","authors":[{"authorName":"李佳艳","id":"3fc339a7-badf-48b5-ab22-982014ad3bfc","originalAuthorName":"李佳艳"},{"authorName":"游小刚","id":"2db2903a-bde8-4ab0-bc0a-52622169f329","originalAuthorName":"游小刚"},{"authorName":"谭毅","id":"94f581b0-aec7-4a22-914e-e93abb3f67ee","originalAuthorName":"谭毅"},{"authorName":"郭素霞","id":"250f1689-bdff-41bc-b92e-a427380c14b0","originalAuthorName":"郭素霞"}],"doi":"","fpage":"2364","id":"2d4c6850-e151-4756-bdf2-7be8bffead6e","issue":"11","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"25ec88b8-c448-4c15-8328-5d93ce586389","keyword":"多孔硅","originalKeyword":"多孔硅"},{"id":"32fe0b8f-a81a-4b1e-9de6-2a8e4acecfe5","keyword":"电化学腐蚀","originalKeyword":"电化学腐蚀"},{"id":"4df9750b-7c41-4034-b008-19b2f46e8fef","keyword":"吸杂","originalKeyword":"吸杂"},{"id":"d26874ea-c0fc-4824-baa5-ec2141a51954","keyword":"电阻率","originalKeyword":"电阻率"}],"language":"zh","publisherId":"rgjtxb98201311026","title":"多孔硅吸杂对<span style=\"color:red\">单晶硅片</span>电性能的影响","volume":"42","year":"2013"},{"abstractinfo":"采用低压化学气相沉积法(LPCVD)在制绒的<span style=\"color:red\">单晶硅片</span>衬底上制备了B掺杂ZnO(BZO)的透明导电薄膜,研究了B2H6掺杂量、沉积时间对BZO薄膜的微观形貌、导电性能及光学减反性能的影响.结果表明,在制绒<span style=\"color:red\">单晶硅片</span>衬底上制备的BZO薄膜均呈现“类金字塔”的绒面结构,其平均晶粒尺寸在200 ～ 500 nm之间,并随B2H6掺杂量增加而减小;BZO薄膜的方阻随沉积时间的增加而呈线性迅速减小的趋势,当沉积时间为420 s时,BZO薄膜的方块电阻低至28 Ω/□;在制绒<span style=\"color:red\">单晶硅片</span>上制备BZO薄膜后,表面平均反射率由15％明显降低至5％左右,表现出优异的光学减反性能.","authors":[{"authorName":"朱登华","id":"0d7e189b-12fd-4c25-9e4c-56348131adca","originalAuthorName":"朱登华"},{"authorName":"李旺","id":"a1d259db-969a-4622-87a6-46c3d3a50524","originalAuthorName":"李旺"},{"authorName":"刘石勇","id":"9b60aa9e-47e5-448f-8961-74ece749a165","originalAuthorName":"刘石勇"},{"authorName":"牛新伟","id":"f907b2c4-6b80-406e-8f68-3f1a1cbc2b01","originalAuthorName":"牛新伟"},{"authorName":"杜国平","id":"9d4166aa-93b8-40b0-b9f9-68a8abdc21c8","originalAuthorName":"杜国平"}],"doi":"","fpage":"19","id":"66d3ef5b-c881-4123-a00d-66d4f6ea2388","issue":"1","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"0a7b97b8-4bd3-4418-9da0-56dac5affa35","keyword":"低压化学气相沉积","originalKeyword":"低压化学气相沉积"},{"id":"609d61d0-4341-42e6-9661-db938064e53f","keyword":"B掺杂ZnO","originalKeyword":"B掺杂ZnO"},{"id":"5ea6590f-85b7-417e-b615-6ce69e3621fb","keyword":"透明导电薄膜","originalKeyword":"透明导电薄膜"},{"id":"23b9dfe7-5740-4e28-ac6d-21678819586a","keyword":"方块电阻","originalKeyword":"方块电阻"},{"id":"8411cbae-0072-44fe-9131-fe9815ff0b48","keyword":"光学减反","originalKeyword":"光学减反"}],"language":"zh","publisherId":"rgjtxb98201501004","title":"LPCVD法在制绒<span style=\"color:red\">单晶硅片</span>衬底上制备ZnO∶B透明导电薄膜及其性能的研究","volume":"44","year":"2015"},{"abstractinfo":"通过往复式电镀金刚石线锯切割<span style=\"color:red\">单晶硅片</span>实验,分析了切片表面的微观形貌特点,研究了锯丝速度与进给速度对<span style=\"color:red\">硅片</span>的表面粗糙度、总厚度偏差(TTV)、翘曲度与亚表面损伤层厚度(SSD)的影响规律.结果表明:线锯锯切时材料以脆性模式去除,锯切表面的微观形貌呈现部分沟槽与断续划痕,并存在大量凹坑;锯丝速度增大,进给速度减小,表面粗糙度与SSD减小;锯丝速度增大,进给速度增大,<span style=\"color:red\">硅片</span>的翘曲度也随之增大;<span style=\"color:red\">硅片</span>TTV值与锯丝速度和进给速度的匹配关系相关.","authors":[{"authorName":"高玉飞","id":"35ecf2e4-7edd-4c7d-88b9-caf17d9662f2","originalAuthorName":"高玉飞"},{"authorName":"葛培琪","id":"98a8f377-4104-493a-9f03-a54a493c1460","originalAuthorName":"葛培琪"},{"authorName":"李绍杰","id":"9bc969b7-65cd-4317-853a-1b79ca2b8ffd","originalAuthorName":"李绍杰"}],"doi":"","fpage":"372","id":"36b2da8a-a04e-40ef-bfb4-4a9a52cdd63c","issue":"2","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"ad90ab6e-d1d1-4f9d-ae4e-b6f5c4908574","keyword":"金刚石线锯","originalKeyword":"金刚石线锯"},{"id":"d4a9bda8-7c8d-45fa-92a7-a0097d5a755c","keyword":"<span style=\"color:red\">单晶硅</span>","originalKeyword":"单晶硅"},{"id":"b590d909-005f-404d-820e-0daac403f6b1","keyword":"晶片","originalKeyword":"晶片"},{"id":"6ca002f9-19e0-413a-b75c-d561faa520e1","keyword":"加工质量","originalKeyword":"加工质量"}],"language":"zh","publisherId":"rgjtxb98200902019","title":"往复式电镀金刚石线锯切割<span style=\"color:red\">单晶硅片</span>特性研究","volume":"38","year":"2009"}],"totalpage":383,"totalrecord":3823}