M.I. Abbas
金属学报(英文版)
Photoemission behaviors of nano-CeO2 films with particle sizes ranging from 8nm 1o50nm and bulk CeO2 in Ce 4d-4f absorption region have been investigated. Resonantenhancements of Ce 4f valance band and Ce 5p bands for nano film and bulk materialhave been observed. The variation of electron density of states in valance bands ofnano and bulk structures of CeO2 is discussed in terms of Ce 4d-4f resonance.
关键词:
photoemission
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李飙
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任艺
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常本康
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陈文聪
材料导报
doi:10.11896/j.issn.1005-023X.2016.08.008
GaN阴极中光电子的发射分为价带电子的激发、光生载流子的输运和载流子的发射3个阶段.分析了激发阶段GaN光电阴极中电子吸收入射光产生从价带到导带的跃迁过程和输运阶段导带中的光电子从体内到表面的扩散过程及发射阶段GaN阴极表面光电子的选出过程;推导了Cs激活过程中到达阴极表面光激发电子的逸出几率公式;比较了仅用Cs激活和共用Cs/O激活过程中到达阴极表面光激发电子逸出几率的变化情况;结果表明:GaN阴极的光电发射为直接跃迁激发,输运阶段仅遭受电子-声子散射,表面光激发电子的逸出几率取决于激活程度,引入Cs是激活的必需因素,O的引入仅可小幅度提升光电发射效率;最后利用实验证实了Cs激活的充分性.
关键词:
负电子亲和势
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GaN
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光电阴极
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光电发射
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激发
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输运
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激活
K. Ibrahim
金属学报(英文版)
Valence band photoemission spectra (PES) for both bulk and nanocrystal CeO2 have been measured on and off resonance of Ce 4d 4f absorption edge. The PES show that the bulk and nanocrystal CeO2 of diameter ranging from 8nm to 50nm exhibit a peak near Fermi edge with binding energy of about 1.8eV. The 1.8eVpeak shows a strong dependence on excitation energy, although it looks like the contribution of Ce3+ ion following the data reported in literatures. However, according to the results of resonance photoemission and X-ray absorption spectra at O 1s edge, this electronic structure may be associated to the intermediate state charge transfer effects.
关键词:
rare earth oxide
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