曹志慧
,
任山令
,
李永涛
,
李兴鳌
材料导报
doi:10.11896/j.issn.1005-023X.2015.08.004
通过磁控溅射方法制备了氮含量不同的氮化铁薄膜,观察到随着氮含量的增加,薄膜的导电机制从金属到半导体的转变.霍尔电阻的测量表明在高电阻区域反常霍尔电阻率与纵向电阻率的标度律为线性,即反常霍尔效应遵循斜散射机制,但相应的反常霍尔电导率与纵向电导率的关系不总是线性.
关键词:
磁控溅射方法
,
反常霍尔效应
,
标度律
,
斜散射
LIU Junming LIU Zhiguo WU Zhuangchun Nanjing University
,
China LIU Junming
,
lecturer
,
National Laboratory of Solid State Microstructuros
,
Nanjing University
,
Nanjing 210008
,
China
金属学报(英文版)
The profile features of the solidifying interface of the irregular Al-Si eutectic during directional solidification are studied by numerically solving a nonlinear coupling equation of directional solidification of this eutectic.The critical splitting point of the solidifying interface coincides with the maximum value of its position and corresponds to the marginal stability point.Argument is presented that the interlamellar spacing for local regular structure selects the critical splitting state of the α(Al)-liquid interface as its operating point,and the oper- ating point of the average interflake spacing for the irregular structure is the critical splitting state of the β(Si)-liquid interface.The scaling laws derived,which have the more general forms than the classic Jackson-Hunt scaling,gained support from the experimental results.
关键词:
irregular Al-Si eutectic
,
null
,
null
