L.Wang
金属学报(英文版)
An isotropic etching technique of texturing silicon solar cells has been applied to polycrystalline silicon wafers with different acid concentrations. Optimal etching conditions have been determined by etching rate calculation, scanning electron microscope (SEM) image and reflectance measurement. The surface morphology of the textured wafers varies in accordance with the different etchant concentration which in turn leads to the dissimilarity of etching speed. Textured polycrystalline silicon wafer surfaces display randomly located etched pits which can reduce the surface reflection and enhance the light absorption. The special relationship between reflectivity and etching rate was studied. Reflectance measurements show that isotropic texturing is one of the suitable techniques for texturing polycrys talline silicon wafers and benefits solar cells performances.
关键词:
texturing
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null
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张发云
材料导报
doi:10.11896/j.issn.1005-023X.2014.18.033
基于麦克斯韦方程组和材料本构方程,利用多物理场有限元软件COMSOL Multiphysics 3.5a中的RF模块建立了多坑绒面的有限元模型,并对硅片腐蚀前后的光学特性进行了模拟.研究表明,与硅片腐蚀前相比,腐蚀后(即多坑)绒面反射率较低,功率流y分量较高,具有较好的陷光效果,当波长为800 nm时,多坑绒面表面电场z分量的最大值和最小值分别为腐蚀前硅片的3.1倍和2.3倍,而表面磁场y分量两个极值分别为腐蚀前硅片的6倍和6.6倍;通过将模拟结果和实验数据比较可知,多坑模型模拟结果更接近实验值,所获模拟结果可更好地指导实际生产.
关键词:
多晶硅
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多坑
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反射率
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绒面
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数值模拟
