材料期刊网

ICPCVD制备硅薄膜结构的椭偏光谱研究

王晓强 , 贺德衍 , 李明亚 , 甄聪棉 , 韩秀梅

稀有金属材料与工程

利用单圈内置式ICP-CVD方法在室温下制备了Si薄膜.在拉曼光谱、原子力显微镜(AFM)对样品结构分析的基础上,采用对样品结构无损伤的椭圆偏振光谱(SE)法对样品进行了测量,结合有效介质近似(EMA)模型,对样品的微结构进行了计算拟合.拉曼光谱及AFM分析表明:样品为具有纳米晶相的Si薄膜;分光椭圆偏振法结合EMA模型对样品微结构的拟合分析得出了同样的结论,说明即使在室温下用ICP-CVD也获得了具有纳米晶相的Si薄膜,薄膜微结构与源气体SiH4浓度有密切关系.说明分光椭圆偏振法是研究薄膜材料的一种有力手段.

关键词: ICP-CVD , Si薄膜 , 低温生长 , 椭偏光谱法

PREPARATION OF IODINE-INCLUDED CARBON USING RF PLASMA CVD

Y.Sakamoto

金属学报(英文版)

For the aim of synthesis of the carbon-iodine compound, the preparation of iodine-included carbon using RF plasma CVD was studied. Iodine-included carbon was synthesized on Si substrate using ICP type RF plasma CVD apparatus. C2H5OH and I2 dissolved C2H5OH was used as reactant gases. As a result, surface morphologies of Iodine included carbon films showed flat surfaces for each samples. On the structure of films estimated by Raman spectroscopy, amorphous carbon was recognized. And I2 peaks were observed in XPS spectra. As a result of friction test, friction coefficient of the sample growth with C2H5OH showed about 0.45. On the other hand, that of the sample with I2-C2H5OH showed about 0.3 and decrease of friction coefficient was recognized. Iodine inclusion for carbon materials can be achieved by RF plasma CVD using an I2-C2H5OH reactant. The coefficient of iodine-included carbon showed lower than of without iodine.

关键词: carbon , null , null , null

ECR-CVD法制备BN薄膜

张生俊 , 崔贲涛 , 王波 , 严辉 , 陈光华

材料科学与工程学报 doi:10.3969/j.issn.1673-2812.2000.z2.024

cBN薄膜的CVD制备是一个很受关注的课题.本文研究了ECR-CVD系统的等离子体特性,并在Si(100)衬底上进行了BN薄膜的生长实验,初步获得了cBN含量约为23.8%的BN薄膜;分析了H2在CVD生长cBN中的影响.

关键词: 电子回旋共振 , cBN , 薄膜

低温多晶硅薄膜的制备评述

杨定宇 , 蒋孟衡 , 杨军

材料科学与工程学报

低温多晶硅薄膜晶体管(LTPS-TFT)驱动技术是实现大尺寸全彩平板显示的必由之路.然而,传统的低温多晶硅薄膜制作工艺存在着工序复杂、薄膜均匀性差、可能有金属污染且造价昂贵等问题.因此,有必要研发新一代的低温多晶硅薄膜制备工艺以期进一步提高薄膜质量,降低驱动成本.本文首先介绍了金属诱导横向晶化法(MILC)和准分子激光晶化法(ELA)制备低温多晶硅薄膜的原理,分析了两者各自的优缺点.接着,重点阐述了电感耦合等离子体化学气相沉积法(ICP-CVD)的工作原理和特点,并介绍了目前ICP-CVD在低温多晶硅薄膜制备上所取得的进展.

关键词: 低温多晶硅薄膜 , 金属诱导横向晶化 , 准分子激光晶化 , 电感耦合等离子体化学气相沉积

面向微机械应用的CVD金刚石微齿轮的制备

王红军 , 左敦稳 , 徐锋 , 卢文壮 , 王珉

人工晶体学报

以电感耦合等离子体(ICP)刻蚀工艺制备单晶硅微齿轮陈列模具,采用热丝法化学气相沉积(HFCVD)制备出结构精细的金刚石微齿轮,其齿顶圆直径约1.55 mm、齿轮厚度10μm.应用扫描电镜分别观察了ICP刻蚀的硅微齿轮模具及CVD金刚石微齿轮,表明齿轮微结构形貌精细,金刚石微齿轮较好地复制了硅微细结构；Raman光谱分析表明微齿轮的金刚石质量较高.此工艺可以实现金刚石薄膜的精细图形化,为面向微机械应用的金刚石器件的经济批量制备提供了一种途径.

关键词: 图形化 , 热丝法化学气相沉积 , 微结构 , 微机械

CVD工艺中气体流型的研究

汪飞琴 , 苏小平 , 鲁泥藕

功能材料

化学气相沉积(CVD)法可制备高纯度、近似元件形状、大面积的块体材料,与制备薄膜的CVD过程相比,该过程存在长时间沉积稳定性、厚度均匀性及光学质量均匀性等问题.本文采用简化装置对CVD工艺过程进行物理模拟,探讨不同工艺参数下沉积室内部气体流型的变化,分析流型对沉积过程的影响.

关键词: 化学气相沉积 , 体材料 , 稳定性 , 均匀性 , 流型

PREFERRED ORIENTATION OF DEPOSITED TiC COATING ON STEEL BY CVD

GUO Chengyan Jilin Institute of Technology , Changchun , ChinaGOTO Takashi HIRAI Toshio Tohoku University , Japan Associate Professor , Department of Materials Engineering , Jilin Institute of Technology , Changchun 130012 , China

金属学报(英文版)

Investigation was made of the deposited rate,surface morphology and crystal pre- ferred orientation of the dense TiC coating onto austenitic stainless steel in relation with CH_4/TiCl_4 mole ratio and temperature adopted in CVD processing. When the CH_4/TiCl_4 ratio is low or high,the preferred orientation may be(220)or(200),respec- tively,which is mainly dependent on the equilibrium concentration of active C in vapour phase.

关键词: preferred orientation , null , null

GaAs的ICP选择刻蚀研究

王惟林 , 刘训春 , 魏珂 , 郭晓旭 , 王润梅

功能材料与器件学报 doi:10.3969/j.issn.1007-4252.2000.03.011

选择刻蚀在GaAs工艺中是非常重要的一步.由于湿法腐蚀存在钻蚀和选择性差,且精度难以控制,因此有必要进行干法刻蚀的研究.虽然采用反应离子刻蚀(RIE)、磁增强反应离子刻蚀(MERIE)可以进行选择刻蚀,但是这两种方法在挖槽时会对器件造成较大损伤,影响器件性能.感应耦合等离子刻蚀(ICP)是一种低损伤、高刻蚀速率高选择比的刻蚀方法,在GaAs器件的制造中有突出的优点.本工作进行了GaAs/AlGaAs的选择刻蚀研究,GaAs/AlGaAs的选择比达到840:1,取得较理想的刻蚀结果.

关键词: GaAs/AlGaAs , ICP , 选择刻蚀

Electrolytic treatment of continuous CVD silicon carbide fibers

Journal of the American Ceramic Society

Continuous CVD SiC fibers have been surface-treated by an electrochemical method, Two important parameters, namely the electric current density (ECD) and the fiber receiving rate (FRR), have been investigated for fiber strength control during the treatment process. An optimum match between ECD and FRR has been suggested, The appropriately treated fibers reached a tensile strength of more than 3000 MPa, showing a large strength enhancement relative to the untreated fiber, which had only a strength of less than 2300 MPa, It has been observed that such an electrochemical treatment has an ''etching effect'' whereby the fiber surface morphology is completely changed, Nodular morphology, which may result in voids or microcrack formation on the fiber surface, is replaced by a smooth and refined structure after treatment, This method has potential for commercial applications of low strength (<2500 MPa) CVD SIC fibers.

关键词: electrochemical treatment;surfaces

EFFECT OF CARBON CONTENT IN SUBSTRATE ON CVD TiN COATING

CHEN Erbao East China Institute of Metallurgy , Maanshan , Anhui Associate Professor , Department of Metallurgical Engineering , East China Institute of Metallurgy , Maanshan , Anhui 243002 , China

金属学报(英文版)

Effect of carbon content of steel substrate,on the chemical vapour deposition(CVD)of TiN has been investigated.The increment of deposition rate is linearly related to the increase of carbon content in own substrate.The α-Fe peak,besides TiN,is revealed in X-ray diffraction pattern of TiN coating.The(220)preferred growth of TiN deposited on steel Cr12MoV substrate increases with the increase of depositing temperature.Only Ti energy spectrum was found from the bright region at coating surface and the interior,while both Ti and Fe energy spectra from dark region.

关键词: TiN chemical vapour deposition , null